DinTek DTM4830 N-channel 80 v (d-s) mosfet halogen-free Datasheet

DTM4830
www.din-tek.jp
N-Channel 80 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
80
RDS(on) ()
ID
0.075 at VGS = 10 V
(A)a
3.5
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
7.3 nC
APPLICATIONS
• DC/DC Conversion
- Notebook System Power
D1
SO-8
S1 1
8
D1
G1 2
7
D1
S2
3
6
D2
G2
4
5
D2
G1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
TA=70°C
Avalanche Current C
C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Maximum
80
Units
V
±30
V
A
2.9
IDM
18
IAR
16
A
EAR
12.8
mJ
2
PD
Junction and Storage Temperature Range
S2
3.5
ID
Pulsed Drain Current C
Repetitive avalanche energy L=0.1mH
TA=25°C
Power Dissipation B
TA=70°C
G2
S1
Top View
Continuous Drain
Current
D2
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.3
RθJA
RθJL
Typ
48
74
32
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
DTM4830
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
ID=250µA, VGS=0V
V
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±30V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
3.5
VGS=10V, VDS=5V
18
TJ=55°C
gFS
Forward Transconductance
VDS=5V, ID=3.5A
IS=1A,VGS=0V
TJ=125°C
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
ISM
Pulsed Body-diode Current
100
nA
4.2
5
V
62
75
113.0
135
A
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=40V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
0.77
S
1
V
2.5
A
18
A
510
640
770
pF
28
40
52
pF
12
20
30
pF
0.9
1.8
2.7
Ω
nC
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
8
11
13
Qg(4.5V) Total Gate Charge
4
5.5
7
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=40V, ID=3.5A
4
5
6
nC
0.7
1.2
1.7
nC
VGS=10V, VDS=40V, RL=8Ω,
RGEN=3Ω
IF=3.5A, dI/dt=300A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=3.5A, dI/dt=300A/µs
mΩ
15
C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
µA
5
VGS=10V, ID=3.5A
Static Drain-Source On-Resistance
Units
1
Zero Gate Voltage Drain Current
RDS(ON)
Max
80
VDS=80V, VGS=0V
IDSS
ID(ON)
Typ
7.2
ns
2.2
ns
17
ns
2
ns
14
20
26
35
50
65
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
DTM4830
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
10V
VDS=5V
7V
16
16
6V
12
ID(A)
ID (A)
12
8
8
125°C
5.5V
4
4
25°C
5V
0
0
0
1
2
3
4
3
5
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
100
Normalized On-Resistance
RDS(ON) (mΩ )
6
7
2.2
90
80
70
VGS=10V
60
2
VGS=10V
ID=3.5A
1.8
1.6
17
5
2
10
1.4
1.2
1
0.8
50
0
4
8
12
16
0
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18
Temperature (Note E)
150
1.0E+02
ID=3.5A
1.0E+01
130
40
1.0E+00
125°C
125°C
110
IS (A)
RDS(ON) (mΩ )
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
1.0E-01
1.0E-02
90
25°C
1.0E-03
70
25°C
1.0E-04
1.0E-05
50
4
8
12
16
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
DTM4830
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
VDS=40V
ID=3.5A
800
Capacitance (pF)
6
4
Ciss
600
400
Coss
200
2
Crss
0
0
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
12
20
40
60
VDS (Volts)
Figure 8: Capacitance Characteristics
80
100.0
100
ID(A), Peak Avalanche Current
TA=25°C
TA=100°C
10
TA=150°C
1
0.000001
0.00001
TA=125°C
10ms
100ms
0.0001
ID (Amps)
10.0
10µs
RDS(ON)
limited
100µs
1.0
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
100m
DC
10s
0.0
0.1
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
TA=25°C
100
Power (W)
VGS (Volts)
8
10
1
0.00001
0.001
0.1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F)
1000
DTM4830
www.din-tek.jp
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
1
0.1
PD
Single Pulse
Ton
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
100
1000
Package Information
www.din-tek.jp
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
1
Application Note
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RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
1
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
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