DTM4830 www.din-tek.jp N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) () ID 0.075 at VGS = 10 V (A)a 3.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 7.3 nC APPLICATIONS • DC/DC Conversion - Notebook System Power D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C TA=70°C Avalanche Current C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Maximum 80 Units V ±30 V A 2.9 IDM 18 IAR 16 A EAR 12.8 mJ 2 PD Junction and Storage Temperature Range S2 3.5 ID Pulsed Drain Current C Repetitive avalanche energy L=0.1mH TA=25°C Power Dissipation B TA=70°C G2 S1 Top View Continuous Drain Current D2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W DTM4830 www.din-tek.jp Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min ID=250µA, VGS=0V V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±30V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 3.5 VGS=10V, VDS=5V 18 TJ=55°C gFS Forward Transconductance VDS=5V, ID=3.5A IS=1A,VGS=0V TJ=125°C VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current ISM Pulsed Body-diode Current 100 nA 4.2 5 V 62 75 113.0 135 A Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.77 S 1 V 2.5 A 18 A 510 640 770 pF 28 40 52 pF 12 20 30 pF 0.9 1.8 2.7 Ω nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge 8 11 13 Qg(4.5V) Total Gate Charge 4 5.5 7 Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=40V, ID=3.5A 4 5 6 nC 0.7 1.2 1.7 nC VGS=10V, VDS=40V, RL=8Ω, RGEN=3Ω IF=3.5A, dI/dt=300A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3.5A, dI/dt=300A/µs mΩ 15 C DYNAMIC PARAMETERS Ciss Input Capacitance µA 5 VGS=10V, ID=3.5A Static Drain-Source On-Resistance Units 1 Zero Gate Voltage Drain Current RDS(ON) Max 80 VDS=80V, VGS=0V IDSS ID(ON) Typ 7.2 ns 2.2 ns 17 ns 2 ns 14 20 26 35 50 65 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with DTM4830 www.din-tek.jp TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 10V VDS=5V 7V 16 16 6V 12 ID(A) ID (A) 12 8 8 125°C 5.5V 4 4 25°C 5V 0 0 0 1 2 3 4 3 5 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 100 Normalized On-Resistance RDS(ON) (mΩ ) 6 7 2.2 90 80 70 VGS=10V 60 2 VGS=10V ID=3.5A 1.8 1.6 17 5 2 10 1.4 1.2 1 0.8 50 0 4 8 12 16 0 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 150 1.0E+02 ID=3.5A 1.0E+01 130 40 1.0E+00 125°C 125°C 110 IS (A) RDS(ON) (mΩ ) 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.0E-01 1.0E-02 90 25°C 1.0E-03 70 25°C 1.0E-04 1.0E-05 50 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) DTM4830 www.din-tek.jp TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=40V ID=3.5A 800 Capacitance (pF) 6 4 Ciss 600 400 Coss 200 2 Crss 0 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 0 12 20 40 60 VDS (Volts) Figure 8: Capacitance Characteristics 80 100.0 100 ID(A), Peak Avalanche Current TA=25°C TA=100°C 10 TA=150°C 1 0.000001 0.00001 TA=125°C 10ms 100ms 0.0001 ID (Amps) 10.0 10µs RDS(ON) limited 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C 100m DC 10s 0.0 0.1 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1000 TA=25°C 100 Power (W) VGS (Volts) 8 10 1 0.00001 0.001 0.1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) 1000 DTM4830 www.din-tek.jp TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 1 0.1 PD Single Pulse Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 100 1000 Package Information www.din-tek.jp SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 1 Application Note www.din-tek.jp RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index 1 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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