Spec. No. : C135N3 Issued Date : 2015.09.07 Revised Date : Page No. : 1/9 CYStech Electronics Corp. -100V P-Channel Enhancement Mode MOSFET MTE300P10KN3 Features • Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • ESD Protected Gate • Pb-free lead plating package Symbol BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-1A -100V -1.2A 378mΩ(typ) Outline MTE300P10KN3 SOT-23 D G：Gate S：Source D：Drain G S Ordering Information Device MTE300P10KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTE300P10KN3 CYStek Product Specification Spec. No. : C135N3 Issued Date : 2015.09.07 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C , VGS=-10V (Note 3) Continuous Drain Current @ TA=70°C, VGS=-10V (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation Linear Derating Factor (Note 3) Operating Junction and Storage Temperature Range Symbol VDS VGS Unit IDM PD Limits -100 ±20 -1.2 -0.96 -9 1.38 Tj ; Tstg 0.01 -55~+150 W/°C °C ID V A W Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Symbol Limit Unit Rth,ja 90 °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf MTE300P10KN3 Min. Typ. Max. Unit -100 -2 - 0.1 378 2 -4 ±100 -1 -25 475 - V V/°C V - 303 42 19 12.2 18.2 43.2 41.2 - μA mΩ S Test Conditions VGS=0V, ID=-250μA Reference to 25°C, ID=-250μA VDS=VGS, ID=-250μA VGS=±20V, VDS=0V VDS=-100V, VGS=0V VDS=-80V, VGS=0V (Tj=70°C) ID=-1A, VGS=-10V VDS=-15V, ID=-1A pF VDS=-25V, VGS=0V, f=1MHz ns VDS=-50V, ID=-1A, VGS=-10V, RG=25Ω CYStek Product Specification CYStech Electronics Corp. Qg Qgs Qgd Source-Drain Diode *IS *ISM *VSD Trr Qrr - 6.4 1.7 1.8 - - -0.79 20.5 18.5 -1.2 -9 -1.2 - nC Spec. No. : C135N3 Issued Date : 2015.09.07 Revised Date : Page No. : 3/9 VDS=-80V, ID=-1A, VGS=-10V A V ns nC VGS=0V, IS=-1A VGS=0V, IF=-1A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint MTE300P10KN3 CYStek Product Specification Spec. No. : C135N3 Issued Date : 2015.09.07 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V 9V 8V 9 -I D, Drain Current(A) 8 -BVDSS, Normalized Drain-Source Breakdown Voltage 10 7V 7 6 6V 5 4 3 -VGS=5.5V 2 -VGS=5V 1 -VGS=4.5V 1.2 1.0 0.8 0.6 ID=-250μA, VGS=0V 0.4 0 0 1 2 3 4 5 6 7 8 -VDS, Drain-Source Voltage(V) 9 -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 -VSD, Source-Drain Voltage(V) RDS(ON), Static Drain-Source On-State Resistance(mΩ) 1000 800 VGS=-4.5V 600 400 200 VGS=-6V VGS=-10V Tj=25°C VGS=0V 1.0 0.8 Tj=150°C 0.6 0.4 0.2 0 0.01 0.1 1 -ID, Drain Current(A) 0 10 2 4 6 8 -IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 1000 3.0 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=-1A 800 600 400 200 2.5 VGS=-10V, ID=-1A 2.0 1.5 1.0 0.5 RDS(ON) @Tj=25°C : 378mΩ typ 0.0 0 0 MTE300P10KN3 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C135N3 Issued Date : 2015.09.07 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage Capacitance---(pF) f=1MHz -VGS(th), Normalized Threshold Voltage 1000 Ciss 100 C oss Crss 1.4 1.2 ID=-1mA 1.0 0.8 0.6 0.4 ID=-250μA 0.2 10 0 10 20 -VDS, Drain-Source Voltage(V) -75 -50 -25 30 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Gate Charge Characteristics Maximum Safe Operating Area 10 10 100μs -VGS, Gate-Source Voltage(V) -I D, Drain Current (A) RDS(ON) Limited 1 1ms 10ms 0.1 TC=25°C, Tj=150°C, VGS=-10V, RθJC=4°C/W, single pulse 0.01 0.1 100ms 1s DC 1 10 100 -VDS, Drain-Source Voltage(V) 8 6 4 2 VDS=-80V ID=-1A 0 0 1000 2 Maximum Drain Current vs Junction Temperature 10 Typical Transfer Characteristics 10 1.4 VDS=-10V 9 1.2 8 -ID, Drain Current(A) -I D, Maximum Drain Current(A) 4 6 8 Qg, Total Gate Charge(nC) 1 0.8 0.6 0.4 6 5 4 3 2 VGS=-10V, Tj(max)=150°C, RθJA=90°C/W, single pulse 0.2 7 1 0 0 25 MTE300P10KN3 50 75 100 125 150 Tj, Junction Temperature(°C) 175 0 1 2 3 4 5 6 7 8 9 10 -VGS, Gate-Source Voltage(V) CYStek Product Specification Spec. No. : C135N3 Issued Date : 2015.09.07 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current Single Pulse Power Rating, Junction to Case GFS , Forward Transfer Admittance(S) 10 300 250 Power (W) 1 0.1 0.01 0.1 1 -ID, Drain Current(A) 200 150 100 VDS=-15V Pulsed Ta=25°C 0.01 0.001 TJ(MAX) =150°C TA=25°C RθJA=90°C/W 50 10 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=90°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTE300P10KN3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C135N3 Issued Date : 2015.09.07 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTE300P10KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C135N3 Issued Date : 2015.09.07 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE300P10KN3 CYStek Product Specification Spec. No. : C135N3 Issued Date : 2015.09.07 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOT-23 Dimension Marking: Date Code A TE 3HPH 3 B S 2 1 G V XX L 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D H K Style: Pin 1.Gate 2.Source 3.Drain J *: Typical DIM Inches Min. Max. 0.1063 0.1220 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 A B C D G H Millimeters Min. Max. 2.70 3.10 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0079 0.0128 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 Millimeters Min. Max. 0.085 0.20 0.32 0.67 0.85 1.15 2.10 2.95 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE300P10KN3 CYStek Product Specification