NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER NESG260234 AMPLIFICATION (1 W) 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (1 W) AMPLIFICATION PO = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz PO = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz • MAXIMUM STABLE GAIN: MSG = 23 dB TYP @ VCE = 6 V, IC = 100 mA, f = 460 MHz • SiGe TECHNOLOGY: UHS2-HV process • ABSOLUTE MAXIMUM RATINGS: VCBO = 25 V • 3-PIN POWER MINIMOLD (34 PACKAGE) ORDERING INFORMATION PART NUMBER ORDER NUMBER NESG260234 NESG260234-AZ NESG260234-T1 NESG260234-T1-AZ PACKAGE QUANTITY SUPPLYING FORM 3-pin power minimold (Pb-Free) Note1 25 pcs (Non reel) • Magazine case 1 kpcs/reel • 12 mm wide embossed taping • Pin 2 (Emitter) face the perforation side of the tape Notes 1. Contains Lead in the part except the electrode terminals. Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA =+25ºC) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 25 V Collector to Emitter Voltage VCEO 9.2 V Emitter to Base Voltage VEBO 2.8 V IC 600 mA Collector Current Total Power Dissipation Ptot Note 1.9 W Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Mounted on 34.2 cm2 × 0.8 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. California Eastern Laboratories NESG260234 THERMAL RESISTANCE (TA = 25°C) PARAMETER Thermal Resistance from Junction to Ambient Note SYMBOL RATINGS UNIT Rthj-a 65 °C/W Note Mounted on 34.2 cm2 × 0.8 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (TA = 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT VCE − 6.0 7.2 V Collector Current IC − 400 500 mA Input Power Pin − 15 20 dBm Collector to Emitter Voltage Note Note Input power under conditions of VCE ≤ 6.0 V, f = 460 MHz NESG260234 ELECTRICAL CHARACHTERISTICS (TA = 25°C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT DC Characteristics Collector Cut-off Current ICBO VCB = 9.2 V, IE = 0 mA − − 1 μA Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 mA − − 1 μA VCE = 3 V, IC = 100 mA 80 120 180 − GL VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 0 dBm 19 22 − dB GL VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 0 dBm − 19 − dB Po VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm 28.5 30.0 − dBm Po VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm − 30.0 − dBm ηc VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm − 50 − % − 60 − % DC Current Gain hFE Note RF Characteristics Linear gain (1) Linear gain (2) Output Power (1) Output Power (2) Collector Efficiency (1) Collector Efficiency (2) ηc VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% hFE CLASSIFICATION RANK FB Marking SP hFE Value 80 to 180 NESG260234 3-PIN POWER MINIMOLD (34 PACKAGE) (UNIT:mm) 4.5±0.1 1.5±0.1 0.8 MIN. 0.42±0.06 3 4.0±0.25 2 1 2.5±0.1 1.6±0.2 0.42±0.06 0.41+0.03 -0.06 0.47±0.06 1.5 3.0 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 12/22/2004 A Business Partner of NEC Compound Semiconductor Devices, Ltd.