DMG6968UDM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • Low Gate Charge Low RDS(ON): Case Material - Molded Plastic, “Green” Molding 24mΩ @ VGS = 4.5V Compound. UL Flammability Classification Rating 94V-0 28mΩ @ VGS = 2.5V • Moisture Sensitivity: Level 1 per J-STD-020 34mΩ @ VGS = 1.8V • Terminals: Finish – Matte Tin annealed over Copper leadframe Solderable per MIL-STD-202, Method 208 e3 • Low Input/Output Leakage • ESD Protected up to 2kV HBM • Terminal Connections: See Diagram • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Weight: 0.0008 grams (approximate) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability D SOT26 S1 G1 D1 / D2 D1 / D2 S2 G2 S2 N-Channel N-Channel Equivalent Circuit (Note 4) Part Number DMG6968UDM-7 Notes: G2 Top View Pin Configuration Top View Ordering Information G1 D S1 ESD PROTECTED TO 2kV Case SOT26 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 2N4 Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 DMG6968UDM Document number: DS31758 Rev. 5 - 2 Mar 3 YM NEW PRODUCT Case: SOT26 • 2N4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2010 X Apr 4 2011 Y May 5 Jun 6 1 of 6 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D June 2014 © Diodes Incorporated DMG6968UDM Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Drain-Source Voltage Characteristic VDSS 20 V Gate-Source Voltage (Note 5) VGSS ±12 V ID 6.5 5.2 A IDM 30 A Symbol Value Unit PD 0.85 W RθJA 147 °C/W TJ, TSTG -55 to +150 °C NEW PRODUCT Drain Current (Note 6) Continuous TA = +25°C TA = +70°C Pulsed Drain Current (Note 7) Unit Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) t ≤10s Operating and Storage Temperature Range Notes: 5. AEC-Q101 VGS maximum is ±9.6V. 6. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s. 7. Repetitive Rating, pulse width limited by junction temperature. Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic STATIC CHARACTERISTICS Symbol Min Typ Max Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Unit Test Condition 20 ⎯ ⎯ V ID = 250µA, VGS = 0V ⎯ ⎯ 1 µA VDS = 20V, VGS = 0V IGSS ⎯ ⎯ ±10 µA VDS = 0V, VGS = ±10V Gate-Source Breakdown Voltage BVSGS ±12 ⎯ ⎯ V VDS = 0V, IG = ±250µA Gate Threshold Voltage VGS(th) 0.5 ⎯ 0.9 V VDS = VGS, ID = 250µA RDS (ON) ⎯ 17 20 26 24 28 34 mΩ VGS = 4.5V, ID = 6.5A VGS = 2.5V, ID = 5.5A VGS = 1.8V, ID = 3.5A Forward Transfer Admittance |YFS| ⎯ 8 ⎯ S VDS = 10V, ID = 5A Diode Forward Voltage (Note 8) VSD ⎯ 0.7 1.0 V IS = 2.25A, VGS = 0V Gate-Body Leakage Current Static Drain-Source On-Resistance (Note 8) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss ⎯ 143 ⎯ pF Output Capacitance Coss ⎯ 74 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 29 ⎯ pF RG ⎯ 202 ⎯ Ω Gate Resisitance VDS = 10V, VGS = 0V f = 1.0MHz VGS = 0V, VDS = 0V, f = 1MHz SWITCHING CHARACTERISTICS (Note 9) Total Gate Charge Qg ⎯ 8.8 ⎯ nC Gate-Source Charge Qgs ⎯ 1.4 ⎯ nC Gate-Drain Charge Qgd ⎯ 3.0 ⎯ nC Turn-On Delay Time tD(on) ⎯ 53 ⎯ ns Turn-On Rise Time tr ⎯ 78 ⎯ ns Turn-Off Delay Time tD(off) ⎯ 562 ⎯ ns tf ⎯ 234 ⎯ ns Turn-Off Fall Time Notes: VGS = 4.5V, VDS = 10V, ID = 6.5A VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω 8. Test pulse width t = 300ms. 9. Guaranteed by design. Not subject to production testing. DMG6968UDM Document number: DS31758 Rev. 5 - 2 2 of 6 www.diodes.com June 2014 © Diodes Incorporated DMG6968UDM 20 30 VGS = 8.0V VGS = 3.0V VGS = 4.5V 25 16 ID, DRAIN CURRENT (A) VGS = 2.5V ID, DRAIN CURRENT (A) VGS = 2.0V 15 10 VGS = 1.5V 12 8 TA = 150°C TA = 125°C 4 5 TA = 85°C TA = 25°C T A = -55°C 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 0.5 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 0.04 VGS = 1.8V 0.03 VGS = 2.5V 0.02 VGS = 4.5V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2 0.05 0.04 VGS = 4.5V TA = 150°C 0.03 TA = 125°C T A = 85°C 0.02 TA = 25°C TA = -55°C 0.01 30 0 0 1.6 0.05 1.4 0.04 VGS = 2.5V ID = 5.5A 1.2 1 1.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 20 VDS = 5V VGS = 4.5V ID = 6.5A 1.0 4 8 12 16 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 20 VGS = 2.5V ID = 5.5A 0.03 0.02 VGS = 4.5V ID = 5.5A 0.01 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMG6968UDM Document number: DS31758 Rev. 5 - 2 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature June 2014 © Diodes Incorporated 20 0.8 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.0 ID = 1mA 12 0.6 ID = 250µA 0.4 0.2 8 TA = 25°C 4 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 1,000 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 100,000 IDSS, LEAKAGE CURRENT (nA) f = 1MHz C, CAPACITANCE (pF) Ciss 100 Coss Crss 10,000 TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 T A = -55°C 10 0 2 T A = 25°C 1 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT DMG6968UDM D = 0.7 D = 0.5 D = 0.1 0.1 D = 0.05 D = 0.9 D = 0.02 RθJA(t) = r(t) * RθJA RθJA = 176°C/W D = 0.01 0.01 D = 0.005 P(pk) D = Single Pulse 0.001 0.00001 0.0001 t1 t2 T J - T A = P * R θJA(t) Duty Cycle, D = t1/t2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 11 Transient Thermal Response DMG6968UDM Document number: DS31758 Rev. 5 - 2 4 of 6 www.diodes.com June 2014 © Diodes Incorporated DMG6968UDM Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. NEW PRODUCT A SOT26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm B C H K M J L D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 C1 G Y X DMG6968UDM Document number: DS31758 Rev. 5 - 2 5 of 6 www.diodes.com June 2014 © Diodes Incorporated DMG6968UDM IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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