CHENYI DL6263 Small signal schottky diode Datasheet

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Technology Co.,Ltd
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DL5711
DL6263
Features
•
•
For general purpose applications
These diodes are also available in the DO-35 case with type
designation 1N5711 and 1N6263, in the Micro-MELF case with type
designation MCL5711 and MCL6263.
Small Signal
Schottky Diodes
Maximum Ratings
MINIMELF
Repetitive Peak Reverse
Voltage
VR
DL5711
70V
DL6263
60V
tp<10uS,
Maximum Forward
IFSM
2.0A
TA=25OC
Surge Current
Power Dissipation
PTOT
400mW*
Junction Temperature
TJ
125OC
Storage Temperature
TSTG
-55~+150OC
Range
* Valid provided that electrodes are kept at ambient temperature
Cathode Mark
C
B
A
Electrical Characteristics @ 25°C Unless Otherwise Specified
Maximum Forward Voltage
VF
Minimum Reverse
Breakdown voltage
DL5711
DL6263
Maximum Leakage current
Maximum Junction
Capacitance
Maximum Reverse recovery
time
Maximum Thermal
resistance junction to
Ambient Air
VR
0.41V
1.0V
IF = 1.0mA
IF = 15mA
IR
70V
60V
200nA
VR=50V
CJ
2.0pF
VR=0, f=1MHz
trr
1.0ns
IF=5.0mA ,
IR=5.0mA ,
RθJA
DIMENSION
DIM
INCHES
MM
NOTE
MIN
MAX
MIN
MAX
A
B
.134
.008
.142
.016
3.40
0.20
3.60
0.40
C
.055
.059
1.40
1.50
SUGGESTED SOLDER
PAD LAYOUT
0.105
0.075”
0.3K/ W
0.030”
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DL5711,DL6263
Fig.1 Typical variation of fwd. current vs forward. voltage for
primary conduction through the Schottky barrier
Fig.2 Typical forward conduction curve of combination
Schottky barrier and PN junction guard ring
mA
mA
IF
IF
VF
VF
Fig.3 Typical variation of reverse current at
various temperatures
Fig.4 Typical capacitance curve as a function of
reverse voltage
PF
mA
TJ=25 C
IR
CJ
VR
VR
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