Sirectifier MUR6020PT Ultra fast recovery diode Datasheet

MUR6020PT, MUR6030PT
Ultra Fast Recovery Diodes
A
C
A
Dimensions TO-247AD
A
C
A
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
MUR6020PT
MUR6030PT
VRSM
V
200
300
Symbol
IFRMS
IFAVM
IFRM
IFSM
Test Conditions
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
1.5
2.49
0.087
0.102
TVJ=TVJM
TC=115oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
50
60
375
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
325
350
290
310
A
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
530
510
420
400
A2s
TVJ=150oC
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md
Mounting torque
P1
Inches
Min.
Max.
Unit
TVJ=150oC
Weight
Millimeter
Min. Max.
Maximum Ratings
TVJ=45oC
I2t
VRRM
V
200
300
Dim.
o
C
125
W
0.8...1.2
Nm
6
g
typical
©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved
www.sirectifier.com
MUR6020PT, MUR6030PT
Ultra Fast Recovery Diodes
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=25oC; VR=0.8.VRRM
TVJ=125oC; VR=0.8.VRRM
200
50
5
uA
uA
mA
VF
IF=30A; TVJ=150oC
TVJ=25oC
0.85
1.10
V
VTO
For power-loss calculations only
0.72
V
TVJ=TVJM
4.2
rT
RthJC
RthCH
1
0.25
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC
trr
o
_
VR=100V; IF=30A; -diF/dt=100A/us; L<0.05uH;
TVJ=100 C
IRM
m
K/W
35
50
ns
4
5
A
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
JEDEC TO-247AD
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* RoHS compliant
* Rectifiers in switch mode power
supplies (SMPS)
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
P2
©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved
www.sirectifier.com
MUR6020PT, MUR6030PT
Ultra Fast Recovery Diodes
120
A
0.8
uC
100
30
TVJ= 100°C
VR = 100V
TVJ= 100°C
A V = 100V
R
25
Qr
IRM
0.6
IF
80
IF= 15A
IF= 35A
IF= 70A
20
60
IF= 15A
IF= 35A
IF= 70A
0.4
TVJ=150°C
TVJ=100°C
TVJ= 25°C
40
15
10
0.2
20
5
0
0.0
0.4
0.0
10
1.2 V
0.8
0
100
VF
Fig. 1 Forward current IF versus VF
Fig. 2 Typ. reverse recovery charge Qr
versus -diF/dt
1.6
70
ns
trr
0
200
400
600 A/us
800 1000
-diF/dt
Fig. 3 Typ. peak reverse current IRM
versus -diF/dt
6
TVJ= 100°C
VR = 100V
60
1.4
Kf
A/us 1000
-diF/dt
V
tfr
5
1.2
us
1.5
VFR
VFR
50
1.8
TVJ= 100°C
IF = 35A
tfr
4
1.2
3
0.9
2
0.6
1
0.3
40
1.0
30
0.8
IRM
0.6
IF= 15A
IF= 35A
IF= 70A
20
10
Qr
0.4
0
0
40
80
120 °C 160
0
0
200
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
400
600 A/us
800
-diF/dt
Fig. 5 Typ. recovery time trr
versus -diF/dt
1000
0
200
400
600
diF/dt
0.0
A/us
800
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF/dt
1.2
K/W
1.0
0.8
ZthJC
0.6
0.4
0.2
0.0
0.001
0.01
0.1
s
1
10
t
Fig. 7 Transient thermal impedance junction to case
P3
©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved
www.sirectifier.com
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