ON MTB20N20ET4 Nâ channel power mosfet Datasheet

MTB20N20E
Preferred Device
Power MOSFET
20 Amps, 200 Volts
N−Channel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured − Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
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20 AMPERES
200 VOLTS
RDS(on) = 160 mΩ
N−Channel
D
G
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−Source Voltage
VDSS
200
Vdc
Drain−Gate Voltage (RGS = 1.0 MΩ)
VDGR
200
Vdc
Gate−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
ID
ID
20
12
60
Adc
MARKING DIAGRAM
& PIN ASSIGNMENT
Apk
125
1.0
2.5
Watts
W/°C
Watts
4
Drain
Rating
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C,
when mounted with the minimum
recommended pad size
Operating and Storage Temperature
Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 20 Apk, L = 3.0 mH, RG = 25 Ω)
Thermal Resistance
− Junction to Case
− Junction to Ambient
− Junction to Ambient, when mounted
with the minimum recommended pad size
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
IDM
PD
4
2
1
TJ, Tstg
− 55 to
150
°C
EAS
600
mJ
3
T20N20E
YWW
1.0
62.5
50
TL
260
2
Drain
1
Gate
T20N20E
Y
WW
°C/W
RθJC
RθJA
RθJA
D2PAK
CASE 418B
STYLE 2
3
Source
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
°C
Package
Shipping
MTB20N20E
D2PAK
50 Units/Rail
MTB20N20ET4
D2PAK
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2000
September, 2004 − Rev. XXX
1
Publication Order Number:
MTB20N20E/D
MTB20N20E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
200
−
−
263
−
−
Vdc
mV/°C
−
−
−
−
10
100
−
−
100
nAdc
2.0
−
−
7.0
4.0
−
Vdc
mV/°C
−
0.12
0.16
Ohm
−
−
−
−
3.84
3.36
gFS
8.0
11
−
mhos
Ciss
−
1880
2700
pF
Coss
−
378
535
Crss
−
68
100
td(on)
−
17
40
tr
−
86
180
td(off)
−
50
100
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0 Vdc)
(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
µAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 10 Adc)
RDS(on)
Drain−Source On−Voltage (VGS = 10 Vdc)
(ID = 20 Adc)
(ID = 10 Adc, TJ = 125°C)
VDS(on)
Forward Transconductance (VDS = 13 Vdc, ID = 10 Adc)
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 100 Vdc, ID = 20 Adc,
VGS = 10 Vdc,
Vdc
RG = 9.1 Ω)
Fall Time
ns
tf
−
60
120
QT
−
54
75
Q1
−
12
−
Q2
−
24
−
Q3
−
22
−
−
−
1.0
0.82
1.35
−
trr
−
239
−
ta
−
136
−
tb
−
103
−
QRR
−
2.09
−
µC
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
−
4.5
−
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
−
7.5
−
nH
Gate Charge
(See Figure 8)
(VDS = 160 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1.)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc,
TJ = 125°C)
Reverse Recovery Time
(S Figure
(See
Fi
14)
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
VSD
Vdc
ns
INTERNAL PACKAGE INDUCTANCE
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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MTB20N20E
TYPICAL ELECTRICAL CHARACTERISTICS
40
40
TJ = 25°C
I D , DRAIN CURRENT (AMPS)
VGS = 10 V
9V
I D , DRAIN CURRENT (AMPS)
8V
7V
30
20
6V
10
5V
0
2
1
3
4
5
6
7
8
25
100°C
20
15
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
VGS = 10 V
0.30
TJ = 100°C
0.25
0.20
0.15
25°C
0.10
− 55°C
0
25°C
30
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
10
9
0.35
0.05
4
8
12
16
20 24
28
ID, DRAIN CURRENT (AMPS)
32
36
40
TJ = 25°C
0.16
0.15
0.14
VGS = 10 V
0.13
0.12
15 V
0.11
0.10
0
8
12
20
16
24
28
ID, DRAIN CURRENT (AMPS)
32
40
36
10000
VGS = 10 V
ID = 10 A
VGS = 0 V
TJ = 125°C
1000
I DSS , LEAKAGE (nA)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
4
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.0
1.6
1.2
0.8
0.4
−50
8.5
0.17
Figure 3. On−Resistance versus Drain Current
and Temperature
2.4
TJ = −55°C
5
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
0
VDS ≥ 10 V
35
100°C
100
25°C
10
1
−25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (°C)
125
150
0
Figure 5. On−Resistance Variation with
Temperature
50
100
150
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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200
MTB20N20E
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (∆t)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because drain−gate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (IG(AV)) can be made from a
rudimentary analysis of the drive circuit so that
The capacitance (Ciss) is read from the capacitance curve at
a voltage corresponding to the off−state condition when
calculating td(on) and is read at a voltage corresponding to the
on−state when calculating td(off).
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate resistance
(Figure 9) shows how typical switching performance is
affected by the parasitic circuit elements. If the parasitics
were not present, the slope of the curves would maintain a
value of unity regardless of the switching speed. The circuit
used to obtain the data is constructed to minimize common
inductance in the drain and gate circuit loops and is believed
readily achievable with board mounted components. Most
power electronic loads are inductive; the data in the figure
is taken with a resistive load, which approximates an
optimally snubbed inductive load. Power MOSFETs may be
safely operated into an inductive load; however, snubbing
reduces switching losses.
t = Q/IG(AV)
During the rise and fall time interval when switching a
resistive load, VGS remains virtually constant at a level
known as the plateau voltage, VSGP. Therefore, rise and fall
times may be approximated by the following:
tr = Q2 x RG/(VGG − VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turn−on and turn−off delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG − VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
5000
Ciss
VDS = 0 V
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
4000
3000
Crss
Ciss
2000
1000
Coss
Crss
0
10
0
5
VGS
5
10
15
20
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
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25
MTB20N20E
QT
10
Q1
8
120
6
90
4
60
ID = 20 A
TJ = 25°C
2
30
Q3
0
0
10
VDS
50
20
30
40
QG, TOTAL GATE CHARGE (nC)
VDD = 30 V
ID = 20 A
VGS = 10 V
TJ = 25°C
150
VGS
Q2
1000
0
60
t, TIME (ns)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
180
VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
12
100
tr
tf
td(off)
td(on)
10
1
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
10
RG, GATE RESISTANCE (OHMS)
100
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
20
VGS = 0 V
TJ = 25°C
I S , SOURCE CURRENT (AMPS)
16
12
8
4
0
0.5
0.55
0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1.0
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed
in
AN569,
“Transient
Thermal
Resistance−General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 µs. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) − TC)/(RθJC).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
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MTB20N20E
SAFE OPERATING AREA
600
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
I D , DRAIN CURRENT (AMPS)
100
10µs
100µs
1ms
1.0
10ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.01
1.0
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.1
ID = 20 A
500
400
300
200
100
0
25
1000
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
150
50
75
100
125
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
t1
t2
DUTY CYCLE, D = t1/t2
0.01
SINGLE PULSE
0.01
1.0E−05
1.0E−04
1.0E−03
1.0E−02
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RθJC(t)
1.0E−01
1.0E+00
1.0E+01
t, TIME (ms)
Figure 13. Thermal Response
3.0
PD, POWER DISSIPATION (WATTS)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1.0
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
2.5
2.0
1.5
1.0
0.5
0
IS
RθJA = 50°C/W
Board material = 0.065 mil FR−4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
25
50
75
100
125
TA, AMBIENT TEMPERATURE (°C)
Figure 15. D2PAK Power Derating Curve
Figure 14. Diode Reverse Recovery Waveform
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150
MTB20N20E
INFORMATION FOR USING THE D2PAK SURFACE MOUNT PACKAGE
RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to ensure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.33
8.38
0.08
2.032
0.42
10.66
0.24
6.096
0.04
1.016
0.12
3.05
0.63
17.02
inches
mm
POWER DISSIPATION FOR A SURFACE MOUNT DEVICE
PD = 150°C − 25°C = 2.5 Watts
50°C/W
The power dissipation for a surface mount device is a
function of the drain pad size. These can vary from the
minimum pad size for soldering to a pad size given for
maximum power dissipation. Power dissipation for a
surface mount device is determined by TJ(max), the
maximum rated junction temperature of the die, RθJA, the
thermal resistance from the device junction to ambient, and
the operating temperature, TA. Using the values provided
on the data sheet, PD can be calculated as follows:
PD =
The 50°C/W for the D2PAK package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 2.5 Watts. There are
other alternatives to achieving higher power dissipation
from the surface mount packages. One is to increase the
area of the drain pad. By increasing the area of the drain
pad, the power dissipation can be increased. Although one
can almost double the power dissipation with this method,
one will be giving up area on the printed circuit board
which can defeat the purpose of using surface mount
technology. For example, a graph of RθJA versus drain pad
area is shown in Figure 16.
TJ(max) − TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device. For a
D2PAK device, PD is calculated as follows.
R
JA , Thermal Resistance, Junction
to Ambient (C/W)
70
Board Material = 0.0625″
G−10/FR−4, 2 oz Copper
60
TA = 25°C
2.5 Watts
° 50
3.5 Watts
40
5 Watts
θ
30
20
0
2
4
6
8
10
A, Area (square inches)
12
14
16
Figure 16. Thermal Resistance versus Drain Pad
Area for the D2PAK Package (Typical)
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MTB20N20E
Another alternative would be to use a ceramic substrate
or an aluminum core board such as Thermal Clad. Using
a board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDER STENCIL GUIDELINES
pattern of the opening in the stencil for the drain pad is not
critical as long as it allows approximately 50% of the pad to
be covered with paste.
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads.
Solder stencils are used to screen the optimum amount.
These stencils are typically 0.008 inches thick and may be
made of brass or stainless steel. For packages such as the
SC−59, SC−70/SOT−323, SOD−123, SOT−23, SOT−143,
SOT−223, SO−8, SO−14, SO−16, and SMB/SMC diode
packages, the stencil opening should be the same as the pad
size or a 1:1 registration. This is not the case with the DPAK
and D2PAK packages. If one uses a 1:1 opening to screen
solder onto the drain pad, misalignment and/or
“tombstoning” may occur due to an excess of solder. For
these two packages, the opening in the stencil for the paste
should be approximately 50% of the tab area. The opening
for the leads is still a 1:1 registration. Figure 17 shows a
typical stencil for the DPAK and D2PAK packages. The
ÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇÇ
ÇÇÇ ÇÇ
ÇÇÇ
ÇÇÇ
ÇÇ
ÇÇÇ
ÇÇÇ
ÇÇÇ
ÇÇÇ
ÇÇÇ
SOLDER PASTE
OPENINGS
STENCIL
Figure 17. Typical Stencil for DPAK and
D2PAK Packages
SOLDERING PRECAUTIONS
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
* Due to shadowing and the inability to set the wave height
to incorporate other surface mount components, the D2PAK
is not recommended for wave soldering.
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MTB20N20E
TYPICAL SOLDER HEATING PROFILE
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177−189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joint.
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 18 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
STEP 1
PREHEAT
ZONE 1
“RAMP”
200°C
STEP 2
STEP 3
VENT
HEATING
“SOAK” ZONES 2 & 5
“RAMP”
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
160°C
STEP 5
STEP 6
STEP 7
HEATING
VENT
COOLING
ZONES 4 & 7
205° TO 219°C
“SPIKE”
PEAK AT
170°C
SOLDER
JOINT
150°C
150°C
100°C
140°C
100°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
5°C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 18. Typical Solder Heating Profile
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MTB20N20E
PACKAGE DIMENSIONS
D2PAK
CASE 418B−03
ISSUE D
C
E
V
−B−
4
A
1
2
3
S
−T−
SEATING
PLANE
K
J
G
D 3 PL
0.13 (0.005)
H
M
T B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
G
H
J
K
S
V
INCHES
MIN
MAX
0.340
0.380
0.380
0.405
0.160
0.190
0.020
0.035
0.045
0.055
0.100 BSC
0.080
0.110
0.018
0.025
0.090
0.110
0.575
0.625
0.045
0.055
STYLE 2:
PIN 1.
2.
3.
4.
http://onsemi.com
10
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
8.64
9.65
9.65
10.29
4.06
4.83
0.51
0.89
1.14
1.40
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
14.60
15.88
1.14
1.40
MTB20N20E
Notes
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11
MTB20N20E
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MTB20N20E/D
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