Sect. 3.1 data sheets 8/7/00 11:52 AM Page 107 OM6056SB OM6058SB OM6060SB Preliminary Data Sheet OM6057SB OM6059SB OM6061SB POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE High Current, High Voltage 100V Thru 1000V, Up To 190 Amp N-Channel, Size 7 MOSFETs FEATURES • • • • • • • Size 7 Die, High Energy Rugged Package Design Solder Terminals Very Low RDS(on) Fast Switching, Low Drive Current Available Screened To MIL-S-19500, TX, TXV And S Levels Ceramic Feedthroughs DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET technology combined with a package designed specifically for high efficiency, high current applications. They are ideally suited for Hi-Rel requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. This series also features avalanche high energy capability at elevated temperatures. MAXIMUM RATINGS @ 25°C PART NUMBER OM6056SB OM6057SB OM6058SB OM6059SB OM6060SB OM6061SB VDS 100 V 200 V 500 V 600 V 800 V 1000 V PIN CONNECTION AND SCHEMATIC 4 11 R0 RDS(on) .008 Ω .018 Ω .095 Ω .140 Ω .300 Ω .500 Ω ID (Continuous) 190 A 105 A 58 A 48 A 34 A 18 A MECHANICAL OUTLINE 3.1 - 107 3.1 Sect. 3.1 data sheets 8/7/00 11:52 AM Page 108 OM6056SB - OM6061SB ABSOLUTE MAXIMUM RATINGS (T Parameter Symbol C = 25°C unless otherwise noted) OM6056SB OM6057SB OM6058SB OM6059SB OM6060SB OM6061SB Unit Drain Source Voltage VDS 100 200 500 600 800 1000 V Drain Gate Voltage (RGS = 1.0 MΩ) VDGR 100 200 500 600 800 1000 V Continuous Drain Current @ TC = 25°C 2 ID 190 105 58 48 34 18 A Continuous Drain Current @ TC = 100°C 2 ID 82 44 25 19 15 7.5 A Pulsed Drain Current1 IDM 440 250 130 110 78 42 A Max. Power Dissipation @ TC = 25°C PD 570 W Max. Power Dissipation @ TC = 100°C PD 245 W Linear Derating Factor Junction-to-Case 4.35 W/°C Linear Derating Factor Junction-to-Ambient .033 W/°C -55 to +150 °C 230 °C Operating and Storage Temp. Range TJ, Tstg Lead Temperature (1/16" from case for 10 sec.) Notes: 1. Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. THERMAL RESISTANCE (MAXIMUM) 2. Package Pin Limitation: 100 Amps @ 125°C. @ TA = 25°C Junction-to-Case RthJC .23 ° C/W Junction-to-Ambient (Free Air Operation) RthJA 30 ° C/W PRELIMINARY ELECTRICAL CHARACTERISTICS Characteristic Test Condition Gate Threshold Voltage VDS = VGS, ID = 250µA Gate-Source Leakage Current VGS = ±20 VDC Off State Drain-Source Leakage VDS = VDSS x 0.8 TC = 25°C VGS = 0V TC = 125°C 3.1 Drain-Source Breakdown Voltage Static Drain-Source On-Resistance VGS = 0V, ID = 250 µA VGS = 10V, ID = ID25 x 0.5 (TC = 25°C unless otherwise noted) Symbol Part No. Min. Max. Units VGS(th) All 2.0 4.0 V IGSS All ±100 nA IDSS All 10 µA IDSS All .10 mA VDSS RDS(on) OM6056SB 100 OM6057SB 200 OM6058SB 500 OM6059SB 600 OM6060SB 800 OM6061SB 1000 V OM6056SB .008 OM6057SB .018 OM6058SB .095 OM6059SB .140 OM6060SB .300 OM6061SB .500 The above data is preliminary. Please contact factory for additional data and the dynamic and switching characteristics. Ω