ASI AVD400 Npn silicon rf power transistor Datasheet

AVD400
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .400 2L FLG (A)
The ASI AVD400 is a silicon NPN power
transistor, designed for high power and
low duty cycle DME and IFF applications.
A
4x .062 x 45°
2xB
.040 x 45°
C
F
E
D
G
FEATURES:
I
• Internal Input/Output Matching Networks
• PG = 6.5 dB at 400 W/1150 MHz
• Omnigold™ Metalization System
2xR
H
J
K
L
N
P
M
DIM
M IN IM UM
M A XIM UM
inches / m m
inches / m m
A
.135 / 3.43
.145 / 3.68
B
.100 / 2.54
.120 / 3.05
C
.050 / 1.27
D
.376 / 9.55
IC
22 A
E
.110 / 2.79
.130 / 3.30
F
.395 / 10.03
.407 / 10.34
VCC
55 V
H
MAXIMUM RATINGS
.193 / 4.90
G
.490 / 12.45
1458 W @ TC = 25 °C
-65 °C to +200 °C
TJ
TSTG
-65 °C to +200 °C
θJC
0.12 °C/W
CHARACTERISTICS
J
.690 / 17.53
.710 / 18.03
K
.890 / 22.61
.910 / 23.11
L
.003 / 0.08
.006 / 0.18
M
.052 / 1.32
.072 / 1.83
N
.118 / 3.00
.131 / 3.33
.230 / 5.84
P
ORDER CODE: ASI10567
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
.510 / 12.95
.100 / 2.54
I
PDISS
.396 / 10.06
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 25 mA
65
V
BVCES
IC = 50 mA
65
V
BVEBO
IE = 10 mA
3.5
V
ICES
VCE = 50 V
hFE
VCE = 5.0 V
PG
ηC
VCC = 50 V
PIN = 90 W
IC = 0.25 A
POUT = 400 W
10
f = 1025 - 1150 MHz
6.5
40
25
mA
200
--dB
%
Pulse Width = 10 µsec, Duty Cycle = 1 %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/3
AVD400
ERROR! REFERENCE SOURCE NOT
FOUND.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
2/3
AVD400
ERROR! REFERENCE SOURCE NOT
FOUND.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
3/3
Similar pages