ASW126 ASW126 Data Sheet 3.3 V Gain Block Amplifier MMIC over DC~3500 MHz 1. Product Overview 1.1 General Description ASW126, 3.3 V internally matched gain block amplifier MMIC, has excellent input and output return loss, and high linearity over a wide range of frequency DC~3500 MHz, being suitable for use in both receiver and transmitter of telecommunication systems up to 3.5 GHz. The amplifier is available in a SOT363 package and passes through the stringent 100% DC & RF test via an automated test handler. 1.2 Features 20.1 dB Gain at 900 MHz 17 dBm P1dB at 900 MHz 31 dBm Output IP3 at 900 MHz 3.7 dB NF at 900 MHz MTTF > 100 Years Minimum External Matching Components Single Supply: +3.3 V 1.3 Applications Base Station Infrastructure Repeater Telecommunication System 1.4 Package Profile & RoHS Compliance SOT363, 2.1x2.0 mm2, surface mount 1/11 ASB Inc. [email protected] RoHS-compliant April 2017 ASW126 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 150 500 900 1750 2000 2400 2700 3500 MHz Gain 24.7 22.6 20.1 15.5 14.4 12.9 11.8 9.6 dB S11 -22 -16 -20 -20 -19 -16 -14 -13 dB S22 -11 -10 -11 -11 -12 -13 -15 -14 dB Noise Figure 3.6 3.8 3.7 3.8 3.9 4.1 4.2 4.3 dB IP31) 28.0 30.0 31.0 32.0 33.5 33.5 33.0 33.5 dBm Output P1dB 16.0 16.5 17.0 17.0 17.5 17.5 18.0 17.5 dBm Current 37 mA Device Voltage +3.3 V Output 1) OIP3 is measured with two tones at the output power of +0 dBm/tone separated by 1 MHz. 2.2 Product Specification Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Min Typ Frequency Unit 900 MHz Gain 19.1 20.1 dB S11 -17 -20 dB S22 -9 -11 dB Noise Figure 3.7 4.0 dB Output IP3 29 31 dBm Output P1dB 16 17 dBm Current 30 37 Device Voltage 2.3 2/11 Max 44 mA +3.3 V Pin Configuration Pin Description 1, 2, 4, 5 Ground 3 RF_IN 6 RF_OUT & Bias ASB Inc. Simplified Outline 1 2 3 [email protected] 6 5 4 April 2017 ASW126 2.4 Absolute Maximum Ratings Parameters Max. Ratings Operation Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +4 V Operation Junction Temperature +150 C Input RF Power (CW, 50 matched) +24 dBm 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 220 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 500 ~ 1000 V MM Class A Voltage Level: <200 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow (Intentionally Blanked) 3/11 ASB Inc. [email protected] April 2017 ASW126 3. Application: 500 ~ 3500 MHz (Vsupply = +3.3 V) 3.1 Application Circuit & Evaluation Board Vdevice = +3.3 V C4 C3 L1 C2 RF OUT C1 RF IN ASW126 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-363-A2 Bill of Material 4/11 Symbol Value Size Description Manufacturer ASW126 - - MMIC Amplifier ASB C1, C2 1 nF 0603 DC blocking capacitor Murata C3 100 pF 0603 Bypass capacitor Murata C4 1 F 0603 Decoupling capacitor Murata L1 47 nH 0603 RF choke inductor Murata ASB Inc. [email protected] April 2017 ASW126 3.2 Performance Table Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 500 900 1750 2000 2400 2700 3500 MHz Gain 22.6 20.1 15.5 14.4 12.9 11.8 9.6 dB S11 -16 -20 -20 -19 -16 -14 -13 dB S22 -10 -11 -11 -12 -13 -15 -14 dB Noise Figure 3.8 3.7 3.8 3.9 4.1 4.2 4.3 dB Output IP31) 30.0 31.0 32.0 33.5 33.5 33.0 33.5 dBm Output P1dB 16.5 17.0 17.0 17.5 17.5 18.0 17.5 dBm Current 37 mA Device Voltage +3.3 V 1) OIP3 is measured with two tones at the output power of +0 dBm/tone separated by 1 MHz. 40 30 20 10 0 -10 -20 -30 -40 -50 -60 0 5/11 10 9 S21 8 7 6 S22 5 S11 4 S12 3 2 K 1 0 500 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Stability Factor, K Plot of S-parameter & Stability Factor S-parameters (dB) 3.3 April 2017 ASW126 3.4 Plots of Noise Figure and Performances with Temperature 30 7 -40 °C 6 25 Gain (dB) NF (dB) 5 NF 4 3 +85 °C 20 15 10 2 5 1 0 0 0 500 1000 1500 2000 2500 Frequency (MHz) 3000 0 3500 0 0 -10 -10 S22 (dB) S11 (dB) +25 °C -40 °C 1000 1500 2000 2500 Frequency (MHz) 3000 3500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 -40 °C -20 -20 500 +25 °C +25 °C +85 °C +85 °C -30 -30 0 500 1000 1500 2000 2500 Frequency (MHz) 3000 0 3500 50 30 45 25 40 20 500 Gain (dB) Current (mA) Frequency = 900 MHz 35 30 10 25 5 0 20 -60 6/11 15 -40 -20 0 20 40 Temperature (°C) 60 80 ASB Inc. 100 -60 [email protected] -40 -20 0 20 40 Temperature (°C) 60 80 100 April 2017 ASW126 22 7 Frequency = 900 MHz 6 Frequency = 900 MHz 20 P1dB (dBm) NF (dB) 5 4 3 18 16 2 14 1 12 0 -60 -40 -20 0 20 40 Temperature (°C) 60 80 100 -60 -40 -20 0 20 40 Temperature (°C) 60 80 100 50 Output IP3 (dBm) Frequency = 900 MHz 40 30 -40 °C 20 +25 °C 10 +85 °C 0 -2 7/11 0 2 4 6 8 Output tone power (dBm) 10 ASB Inc. 12 [email protected] April 2017 ASW126 4. Application: 50 ~ 500 MHz (IF, Vsupply = +3.3 V) 4.1 Application Circuit & Evaluation Board Vdevice = +3.3 V C4 C3 L1 C2 RF OUT C1 RF IN ASW126 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-363-A2 Bill of Material 8/11 Symbol Value Size Description Manufacturer ASW126 - - MMIC Amplifier ASB C1, C2 1 nF 0603 DC blocking capacitor Murata C3 100 pF 0603 Bypass capacitor Murata C4 1 F 0603 Decoupling capacitor Murata L1 680 nH 0603 RF choke inductor Samsung ASB Inc. [email protected] April 2017 ASW126 4.2 Performance Table Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 70 150 300 450 MHz Gain 24.8 24.5 24.0 23.0 dB S11 -20 -21 -23 -23 dB S22 -11 -11 -11 -11 dB Noise Figure 3.6 3.5 3.7 3.7 dB Output IP31) 27.5 27.5 29.5 28.5 dBm Output P1dB 16.0 16.0 16.5 16.5 dBm Current 37 mA Device Voltage +3.3 V 1) OIP3 is measured with two tones at the output power of +0 dBm/tone separated by 1 MHz. 40 30 20 10 0 -10 -20 -30 -40 -50 -60 S21 S22 S11 S12 K 10 9 8 7 6 5 4 3 2 1 0 Stability Factor, K Plot of S-parameter & Stability Factor S-parameters (dB) 4.3 50 100 150 200 250 300 350 400 450 500 Frequency (MHz) 9/11 ASB Inc. [email protected] April 2017 ASW126 5. Package Outline (SOT363, 2.1x2.0x1.0 mm) Symbols W126 A A1 A2 b C D F E1 e e1 L Dimensions (In mm) MIN NOM 0.900 1.000 0.025 0.062 0.875 0.937 0.200 0.300 0.100 0.125 1.900 2.000 1.150 1.250 2.000 2.100 0.65BSC 1.30BSC 0.425REF MAX 1.10 0.10 1.00 0.40 0.15 2.10 1.35 2.20 6. Surface Mount Recommendation (In mm) 1.48 NOTE 0.30 1. The number and size of ground via holes in a circuit board are critical for thermal and RF grounding considerations. 0.25 0.30 1.23 2. Recommend is that the ground via holes be placed on the bottom of the ground leads and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. 10/11 0.50 1.75 0.40 1.33 0.42 ASB Inc. [email protected] April 2017 ASW126 7. Recommended Soldering Reflow Profile 260 C 20~40 sec Ramp-up (3 C/sec) Ramp-down (6 C/sec) 200 C 150 C 60~180 sec (End of Datasheet) Copyright 2014-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 11/11 ASB Inc. [email protected] April 2017