CY7C1371DV25 CY7C1373DV25 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture Functional Description[1] Features • No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through operation • Byte Write capability • 2.5V core power supply (VDD) • 2.5V I/O power supply (VDDQ) • Fast clock-to-output times — 6.5 ns (for 133-MHz device) • Clock Enable (CEN) pin to enable clock and suspend operation • Synchronous self-timed writes • Asynchronous Output Enable • Available in JEDEC-standard lead-free 100-Pin TQFP, lead-free and non-lead-free 119-Ball BGA and 165- Ball FBGA package. The CY7C1371DV25/CY7C1373DV25 is a 2.5V, 512K x 36/1M x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1371DV25/CY7C1373DV25 is equipped with the advanced No Bus Latency (NoBL) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent Write-Read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock. The clock input is qualified by the Clock Enable (CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. Maximum access delay from the clock rise is 6.5 ns (133-MHz device). Write operations are controlled by the two or four Byte Write Select (BWX) and a Write Enable (WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry. Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output tri-state control. In order to avoid bus contention, the output drivers are synchronously tri-stated during the data portion of a write sequence. • Three chip enables for simple depth expansion • Automatic Power-down feature available using ZZ mode or CE deselect • IEEE 1149.1 JTAG-Compatible Boundary Scan • Burst Capability—linear or interleaved burst order • Low standby power Selection Guide 133 MHz 100 MHz Unit Maximum Access Time 6.5 8.5 ns Maximum Operating Current 210 175 mA Maximum CMOS Standby Current 70 70 mA Notes: 1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05557 Rev. *D • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised June 29, 2006 CY7C1371DV25 CY7C1373DV25 1 Logic Block Diagram – CY7C1371DV25 (512K x 36) ADDRESS REGISTER A0, A1, A A1 D1 A0 D0 MODE CLK CEN C CE ADV/LD C BURST LOGIC Q1 A1' A0' Q0 WRITE ADDRESS REGISTER ADV/LD BWA WRITE DRIVERS WRITE REGISTRY AND DATA COHERENCY CONTROL LOGIC BWB BWC MEMORY ARRAY S E N S E A M P S BWD WE D A T A S T E E R I N G O U T P U T B U F F E R S DQs DQPA DQPB DQPC DQPD E INPUT E REGISTER OE CE1 CE2 CE3 READ LOGIC SLEEP CONTROL ZZ 2 Logic Block Diagram – CY7C1373DV25 (1M x 18) ADDRESS REGISTER A0, A1, A A1 D1 A0 D0 MODE CLK CEN C CE ADV/LD C BURST LOGIC Q1 A1' A0' Q0 WRITE ADDRESS REGISTER ADV/LD BWA BWB WRITE REGISTRY AND DATA COHERENCY CONTROL LOGIC WRITE DRIVERS MEMORY ARRAY S E N S E A M P S WE OE CE1 CE2 CE3 ZZ Document #: 38-05557 Rev. *D D A T A S T E E R I N G O U T P U T B U F F E R S DQs DQPA DQPB E INPUT E REGISTER READ LOGIC SLEEP CONTROL Page 2 of 28 CY7C1371DV25 CY7C1373DV25 Pin Configurations Document #: 38-05557 Rev. *D A 43 44 45 46 47 48 49 50 NC/72M NC/36M A A A A A A A 41 VDD 42 40 37 A0 VSS 36 A1 39 35 A NC/144M 34 A 38 33 A NC/288M 32 A 81 A 82 A 83 A 84 ADV/LD 85 OE CEN 87 VSS 90 WE VDD 91 88 CE3 92 CLK BWA 93 89 BWC BWB BWD 96 94 CE2 97 95 CE1 A 98 86 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 CY7C1371DV25 31 BYTE D 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 MODE BYTE C DQPC DQC DQC VDDQ VSS DQC DQC DQC DQC VSS VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSS DQD DQD DQD DQD VSS VDDQ DQD DQD DQPD 99 100 A 100-pin TQFP Pinout DQPB DQB DQB VDDQ VSS DQB DQB DQB DQB VSS VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSS DQA DQA DQA DQA VSS VDDQ DQA DQA DQPA BYTE B BYTE A Page 3 of 28 CY7C1371DV25 CY7C1373DV25 Pin Configurations (continued) A 42 43 44 45 46 47 48 49 50 NC/72M A A A A A A A 41 VDD NC/36M 40 37 A0 VSS 36 A1 39 35 A NC/144M 34 A 38 33 A NC/288M 32 A Document #: 38-05557 Rev. *D 81 A 82 A 83 A 84 ADV/LD 85 OE CEN 87 90 WE VSS 91 88 VDD 92 CLK CE3 93 89 BWB BWA 94 NC 95 NC 97 96 CE1 CE2 A 98 86 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 CY7C1373DV25 31 BYTE B VDDQ VSS NC NC DQB DQB VSS VDDQ DQB DQB NC VDD NC VSS DQB DQB VDDQ VSS DQB DQB DQPB NC VSS VDDQ NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 MODE NC NC NC 99 100 A 100-Pin TQFP Pinout A NC NC VDDQ VSS NC DQPA DQA DQA VSS VDDQ DQA DQA VSS NC VDD ZZ BYTE A DQA DQA VDDQ VSS DQA DQA NC NC VSS VDDQ NC NC NC Page 4 of 28 CY7C1371DV25 CY7C1373DV25 Pin Configurations (continued) 119-Ball BGA Pinout CY7C1371DV25 (512K x 36) 1 A VDDQ 2 A 3 A 4 A 5 A 6 A 7 VDDQ B C NC/576M NC/1G CE2 A A A ADV/LD VDD A A CE3 A NC NC D E DQC DQC DQPC DQC VSS VSS NC VSS VSS DQPB DQB DQB DQB F VDDQ DQC VSS VSS DQB VDDQ G H J K DQC DQC VDDQ DQD DQC DQC VDD DQD BWC VSS NC VSS BWB VSS NC VSS DQB DQB VDD DQA DQB DQB VDDQ DQA L DQD DQD DQA VDDQ DQD BWA VSS DQA M BWD VSS DQA VDDQ N DQD DQD VSS VSS DQA DQA CE1 OE A WE VDD CLK NC CEN A1 P DQD DQPD VSS A0 VSS DQPA DQA R NC/144M A MODE VDD NC A NC/288M T U NC VDDQ NC/72M TMS A TDI A TCK A TDO NC/36M NC ZZ VDDQ 6 7 CY7C1373DV25 (1M x 18) 1 2 3 4 5 A VDDQ A A A A A VDDQ B NC/576M CE2 A A NC/1G A A A CE3 A NC C ADV/LD VDD D DQB NC VSS NC VSS DQPA NC E NC DQB VSS CE1 VSS NC DQA F VDDQ NC VSS VSS DQA VDDQ G H J NC DQB VDDQ DQB NC VDD BWB VSS NC OE A WE VDD NC VSS NC NC DQA VDD DQA NC VDDQ K NC DQB VSS CLK VSS NC DQA L M DQB VDDQ NC DQB NC VSS NC DQA NC NC VDDQ N DQB NC VSS CEN A1 BWA VSS VSS DQA NC P NC DQPB VSS A0 VSS NC DQA R T U NC/144M NC/72M VDDQ A A TMS MODE A TDI VDD NC/36M TCK NC A TDO A A NC NC/288M ZZ VDDQ Document #: 38-05557 Rev. *D NC Page 5 of 28 CY7C1371DV25 CY7C1373DV25 Pin Configurations (continued) 165-Ball FBGA Pinout CY7C1371DV25 (512K x 36) 2 3 4 5 6 7 8 9 10 11 A B C D E F G H J K L M N P NC/576M 1 A CE1 BWC BWB CE3 CEN ADV/LD A A NC NC/1G A CE2 BWD BWA CLK WE OE A A NC DQPC DQC NC DQC VDDQ VSS VDD VSS VSS VSS VSS VSS VSS VSS VDD VDDQ VDDQ VDDQ NC DQB DQPB DQB DQC DQC VDDQ VDD VSS VSS VSS VDD VDDQ DQB DQB DQC DQC NC DQD DQC VDDQ VDD VSS VSS VSS VDD DQB VDDQ NC VDDQ VDD VDD VDD VSS VSS VSS VSS VSS VSS VSS VSS VSS VDD VDD VDD VDDQ VDDQ NC VDDQ DQB DQC NC DQD DQB NC DQA DQB ZZ DQA DQD DQD VDDQ VDD VSS VSS VSS VDD VDDQ DQA DQA DQD DQD VDDQ VDD VSS VSS VSS VDD VDDQ DQA DQA DQD DQPD DQD NC VDDQ VDDQ VDD VSS VSS NC VSS A A R MODE A A NC/144M NC/72M NC/36M VSS NC VDD VSS VDDQ VDDQ DQA NC DQA DQPA TDI NC A1 TDO A A A NC/288M TMS A0 TCK A A A A CY7C1373DV25 (1M x 18) 2 3 4 5 6 7 8 9 10 11 A B C D E F G H J K L M N P NC/576M 1 A CE1 BWB NC CE3 CEN ADV/LD A A A NC/1G A CE2 NC BWA CLK WE OE A A NC NC NC NC DQB VDDQ VDDQ VSS VDD VSS VSS VSS VSS VSS VSS VSS VDD VDDQ VDDQ NC NC DQPA DQA R MODE NC DQB VDDQ VDD VSS VSS VSS VDD VDDQ NC DQA NC NC NC DQB DQB VDD VDD VDD VDD VDDQ VDDQ NC VDDQ NC VSS VSS VSS VSS VSS VSS VSS VDD VDD VDD VDD VSS VSS VSS VSS VSS DQB NC NC VDDQ VDDQ NC VDDQ NC NC DQA DQA DQA ZZ NC DQB NC VDDQ VDD VSS VSS VSS VDD VDDQ DQA NC DQB NC VDDQ VDD VSS VSS VSS VDD VDDQ DQA NC DQB DQPB NC NC VDDQ VDDQ VDD VSS VSS NC VSS VDD VSS VDDQ VDDQ DQA NC NC NC A A TDI NC A1 VSS NC TDO A A A NC/288M A A TMS A0 TCK A A A A NC/144M NC/72M NC/36M Document #: 38-05557 Rev. *D Page 6 of 28 CY7C1371DV25 CY7C1373DV25 Pin Definitions Name I/O Description A0, A1, A InputSynchronous Address Inputs used to select one of the address locations. Sampled at the rising edge of the CLK. A[1:0] are fed to the two-bit burst counter. BWA, BWB BWC, BWD InputSynchronous Byte Write Inputs, active LOW. Qualified with WE to conduct writes to the SRAM. Sampled on the rising edge of CLK. WE InputSynchronous Write Enable Input, active LOW. Sampled on the rising edge of CLK if CEN is active LOW. This signal must be asserted LOW to initiate a write sequence. ADV/LD InputSynchronous Advance/Load Input. Used to advance the on-chip address counter or load a new address. When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a new address can be loaded into the device for an access. After being deselected, ADV/LD should be driven LOW in order to load a new address. CLK InputClock Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with CEN. CLK is only recognized if CEN is active LOW. CE1 InputSynchronous Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2, and CE3 to select/deselect the device. CE2 InputSynchronous Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE3 to select/deselect the device. CE3 InputSynchronous Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE2 to select/deselect the device. OE InputAsynchronous Output Enable, asynchronous input, active LOW. Combined with the synchronous logic block inside the device to control the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. OE is masked during the data portion of a write sequence, during the first clock when emerging from a deselected state, when the device has been deselected. CEN InputSynchronous Clock Enable Input, active LOW. When asserted LOW the Clock signal is recognized by the SRAM. When deasserted HIGH the Clock signal is masked. Since deasserting CEN does not deselect the device, CEN can be used to extend the previous cycle when required. ZZ InputAsynchronous ZZ “Sleep” Input. This active HIGH input places the device in a non-time critical “sleep” condition with data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ pin has an internal pull-down. DQs I/OSynchronous Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the addresses presented during the previous clock rise of the read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQP[A:D] are placed in a tri-state condition.The outputs are automatically tri-stated during the data portion of a write sequence, during the first clock when emerging from a deselected state, and when the device is deselected, regardless of the state of OE. DQPX I/OSynchronous Bidirectional Data Parity I/O Lines. Functionally, these signals are identical to DQs. MODE Input Strap Pin Mode Input. Selects the burst order of the device. When tied to Gnd selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. VDD Power Supply Power supply inputs to the core of the device. VDDQ I/O Power Supply VSS Ground TDO JTAG serial output Synchronous Document #: 38-05557 Rev. *D Power supply for the I/O circuitry. Ground for the device. Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the JTAG feature is not being utilized, this pin should be left unconnected. This pin is not available on TQFP packages. Page 7 of 28 CY7C1371DV25 CY7C1373DV25 Pin Definitions (continued) Name I/O Description TDI JTAG serial input Synchronous Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is not being utilized, this pin can be left floating or connected to VDD through a pull-up resistor. This pin is not available on TQFP packages. TMS JTAG serial input Synchronous Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is not being utilized, this pin can be disconnected or connected to VDD. This pin is not available on TQFP packages. TCK JTAGClock Clock input to the JTAG circuitry. If the JTAG feature is not being utilized, this pin must be connected to VSS. This pin is not available on TQFP packages. NC – Document #: 38-05557 Rev. *D No Connects. Not internally connected to the die. 36 Mbit, 72 Mbit, 144 Mbit, 288 Mbit, 576 Mbit and 1 Gbit are address expansion pins and are not internally connected to the die. Page 8 of 28 CY7C1371DV25 CY7C1373DV25 Functional Overview The CY7C1371DV25/CY7C1373DV25 is a synchronous flow-through burst SRAM designed specifically to eliminate wait states during Write-Read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock. The clock signal is qualified with the Clock Enable input signal (CEN). If CEN is HIGH, the clock signal is not recognized and all internal states are maintained. All synchronous operations are qualified with CEN. Maximum access delay from the clock rise (tCDV) is 6.5 ns (133-MHz device). Accesses can be initiated by asserting all three Chip Enables (CE1, CE2, CE3) active at the rising edge of the clock. If Clock Enable (CEN) is active LOW and ADV/LD is asserted LOW, the address presented to the device will be latched. The access can either be a read or write operation, depending on the status of the Write Enable (WE). BWX can be used to conduct byte write operations. Write operations are qualified by the Write Enable (WE). All writes are simplified with on-chip synchronous self-timed write circuitry. Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) simplify depth expansion. All operations (Reads, Writes, and Deselects) are pipelined. ADV/LD should be driven LOW once the device has been deselected in order to load a new address for the next operation. Single Read Accesses A read access is initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are ALL asserted active, (3) the Write Enable input signal WE is deasserted HIGH, and (4) ADV/LD is asserted LOW. The address presented to the address inputs is latched into the Address Register and presented to the memory array and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the output buffers. The data is available within 6.5 ns (133-MHz device) provided OE is active LOW. After the first clock of the read access, the output buffers are controlled by OE and the internal control logic. OE must be driven LOW in order for the device to drive out the requested data. On the subsequent clock, another operation (Read/Write/Deselect) can be initiated. When the SRAM is deselected at clock rise by one of the chip enable signals, its output will be tri-stated immediately. Burst Read Accesses The CY7C1371DV25/CY7C1373DV25 has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Reads without reasserting the address inputs. ADV/LD must be driven LOW in order to load a new address into the SRAM, as described in the Single Read Access section above. The sequence of the burst counter is determined by the MODE input signal. A LOW input on MODE selects a linear burst mode, a HIGH selects an interleaved burst sequence. Both burst counters use A0 and A1 in the burst sequence, and will wrap around when incremented sufficiently. A HIGH input on ADV/LD will increment the internal burst counter regardless of the state of chip enable inputs or WE. WE is latched at the beginning of a burst cycle. Therefore, the type of access (Read or Write) is maintained throughout the burst sequence. Document #: 38-05557 Rev. *D Single Write Accesses Write access are initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are ALL asserted active, and (3) the write signal WE is asserted LOW. The address presented to the address bus is loaded into the Address Register. The write signals are latched into the Control Logic block. The data lines are automatically tri-stated regardless of the state of the OE input signal. This allows the external logic to present the data on DQs and DQPX. On the next clock rise the data presented to DQs and DQPX (or a subset for byte write operations, see truth table for details) inputs is latched into the device and the write is complete. Additional accesses (Read/Write/Deselect) can be initiated on this cycle. The data written during the Write operation is controlled by BWX signals. The CY7C1371DV25/CY7C1373DV25 provides byte write capability that is described in the truth table. Asserting the Write Enable input (WE) with the selected Byte Write Select input will selectively write to only the desired bytes. Bytes not selected during a byte write operation will remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. Byte write capability has been included in order to greatly simplify Read/Modify/Write sequences, which can be reduced to simple byte write operations. Because the CY7C1371DV25/CY7C1373DV25 is a common I/O device, data should not be driven into the device while the outputs are active. The Output Enable (OE) can be deasserted HIGH before presenting data to the DQs and DQPX inputs. Doing so will tri-state the output drivers. As a safety precaution, DQs and DQPX are automatically tri-stated during the data portion of a write cycle, regardless of the state of OE. Burst Write Accesses The CY7C1371DV25/CY7C1373DV25 has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Write operations without reasserting the address inputs. ADV/LD must be driven LOW in order to load the initial address, as described in the Single Write Access section above. When ADV/LD is driven HIGH on the subsequent clock rise, the Chip Enables (CE1, CE2, and CE3) and WE inputs are ignored and the burst counter is incremented. The correct BWX inputs must be driven in each cycle of the burst write, in order to write the correct bytes of data. Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two clock cycles are required to enter into or exit from this “sleep” mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the “sleep” mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the “sleep” mode. CE1, CE2, and CE3, must remain inactive for the duration of tZZREC after the ZZ input returns LOW. Page 9 of 28 CY7C1371DV25 CY7C1373DV25 Interleaved Burst Address Table (MODE = Floating or VDD) Linear Burst Address Table (MODE = GND) First Address A1: A0 Second Address A1: A0 Third Address A1: A0 Fourth Address A1: A0 First Address A1: A0 Second Address A1: A0 Third Address A1: A0 Fourth Address A1: A0 00 01 10 11 00 01 10 11 01 00 11 10 01 10 11 00 10 11 00 01 10 11 00 01 11 10 01 00 11 00 01 10 ZZ Mode Electrical Characteristics Parameter Description Test Conditions Min. Max. Unit IDDZZ Sleep mode standby current ZZ > VDD – 0.2V 80 mA tZZS Device operation to ZZ ZZ > VDD – 0.2V 2tCYC ns tZZREC ZZ recovery time ZZ < 0.2V tZZI ZZ active to sleep current This parameter is sampled tRZZI ZZ Inactive to exit sleep current This parameter is sampled 2tCYC ns 2tCYC 0 ns ns Truth Table[2, 3, 4, 5, 6, 7, 8] Operation Deselect Cycle Address Used CE1 CE2 CE3 ZZ ADV/LD WE None H X X L L X BWX OE CEN CLK DQ X X L L->H Tri-State Deselect Cycle None X X H L L X X X L L->H Tri-State Deselect Cycle None X L X L L X X X L L->H Tri-State Continue Deselect Cycle None X X X L H X X X L L->H Tri-State Read Cycle (Begin Burst) External L H L L L H X L L L->H Data Out (Q) Next X X X L H X X L L L->H Data Out (Q) External L H L L L H X H L L->H Tri-State Next X X X L H X X H L L->H Tri-State Read Cycle (Continue Burst) NOP/Dummy Read (Begin Burst) Dummy Read (Continue Burst) Write Cycle (Begin Burst) External L H L L L L L X L L->H Data In (D) Write Cycle (Continue Burst) Next X X X L H X L X L L->H Data In (D) NOP/Write Abort (Begin Burst) None L H L L L L H X L L->H Tri-State Write Abort (Continue Burst) Next X X X L H X H X L L->H Tri-State Current X X X L X X X X H L->H - None X X X H X X X X X X Tri-State Ignore Clock Edge (Stall) Sleep Mode Notes: 2. X = “Don't Care.” H = Logic HIGH, L = Logic LOW. BWX = 0 signifies at least one Byte Write Select is active, BWX = Valid signifies that the desired byte write selects are asserted, see truth table for details. 3. Write is defined by BWX, and WE. See truth table for Read/Write. 4. When a write cycle is detected, all I/Os are tri-stated, even during byte writes. 5. The DQs and DQPX pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock. 6. CEN = H, inserts wait states. 7. Device will power-up deselected and the I/Os in a tri-state condition, regardless of OE. 8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQs and DQPX = Tri-state when OE is inactive or when the device is deselected, and DQs and DQPX = data when OE is active. Document #: 38-05557 Rev. *D Page 10 of 28 CY7C1371DV25 CY7C1373DV25 Partial Truth Table for Read/Write[2, 3, 9] Function (CY7C1371DV25) WE BWA BWB BWC BWD Read H X X X X Write No bytes written L H H H H Write Byte A – (DQA and DQPA) Write Byte B – (DQB and DQPB) L L H H H L H L H H Write Byte C – (DQC and DQPC) L H H L H Write Byte D – (DQD and DQPD) L H H H L Write All Bytes L L L L L Partial Truth Table for Read/Write[2, 3, 9] WE BWA BWB Read Function (CY7C1373DV25) H X X Write - No bytes written L H H Write Byte A – (DQA and DQPA) Write Byte B – (DQB and DQPB) L L H L H L Write All Bytes L L L Note: 9. Table only lists a partial listing of the byte write combinations. Any Combination of BWX is valid. Appropriate write will be done based on which byte write is active. Document #: 38-05557 Rev. *D Page 11 of 28 CY7C1371DV25 CY7C1373DV25 IEEE 1149.1 Serial Boundary Scan (JTAG) Test Data-In (TDI) The CY7C1371DV25/CY7C1373DV25 incorporates a serial boundary scan test access port (TAP).This part is fully compliant with 1149.1. The TAP operates using JEDEC-standard 3.3V or 2.5V I/O logic levels. The CY7C1371DV25/CY7C1373DV25 contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately be connected to VDD through a pull-up resistor. TDO should be left unconnected. Upon power-up, the device will come up in a reset state which will not interfere with the operation of the device. The TDI ball is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register, see figure. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) of any register. (See Tap Controller Block Diagram.) Test Data-Out (TDO) The TDO output ball is used to serially clock data-out from the registers. The output is active depending upon the current state of the TAP state machine. The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. (See Tap Controller State Diagram.) TAP Controller Block Diagram TAP Controller State Diagram 1 0 Bypass Register TEST-LOGIC RESET 2 1 0 0 0 RUN-TEST/ IDLE 1 SELECT DR-SCAN 1 SELECT IR-SCAN 0 1 1 CAPTURE-DR 0 Selection Circuitry TDO Identification Register CAPTURE-IR x . . . . . 2 1 0 SHIFT-IR 1 Instruction Register 31 30 29 . . . 2 1 0 0 SHIFT-DR Boundary Scan Register 0 1 EXIT1-DR 1 EXIT1-IR 0 1 TCK 0 PAUSE-DR 0 PAUSE-IR 1 0 TMS TAP CONTROLLER 1 EXIT2-DR 0 EXIT2-IR 1 Performing a TAP Reset 1 UPDATE-DR 1 TDI Selection Circuitry 0 0 0 1 0 UPDATE-IR 1 0 The 0/1 next to each state represents the value of TMS at the rising edge of TCK. A RESET is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This RESET does not affect the operation of the SRAM and may be performed while the SRAM is operating. At power-up, the TAP is reset internally to ensure that TDO comes up in a High-Z state. TAP Registers The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Registers are connected between the TDI and TDO balls and allow data to be scanned into and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction register. Data is serially loaded into the TDI ball on the rising edge of TCK. Data is output on the TDO ball on the falling edge of TCK. Test Mode Select (TMS) Instruction Register The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. It is allowable to leave this ball unconnected if the TAP is not used. The ball is pulled up internally, resulting in a logic HIGH level. Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO balls as shown in the Tap Controller Block Diagram. Upon power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. Test Access Port (TAP) Test Clock (TCK) Document #: 38-05557 Rev. *D Page 12 of 28 CY7C1371DV25 CY7C1373DV25 When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary “01” pattern to allow for fault isolation of the board-level serial test data path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between the TDI and TDO balls. This allows data to be shifted through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register upon power-up or whenever the TAP controller is given a test logic reset state. SAMPLE Z The SAMPLE Z instruction causes the boundary scan register to be connected between the TDI and TDO balls when the TAP controller is in a Shift-DR state. It also places all SRAM outputs into a High-Z state. Boundary Scan Register SAMPLE/PRELOAD The boundary scan register is connected to all the input and bidirectional balls on the SRAM. SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the inputs and output pins is captured in the boundary scan register. The boundary scan register is loaded with the contents of the RAM I/O ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO balls when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instructions can be used to capture the contents of the I/O ring. The Boundary Scan Order tables show the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI and the LSB is connected to TDO. Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in the Identification Register Definitions table. TAP Instruction Set Overview Eight different instructions are possible with the three bit instruction register. All combinations are listed in the Instruction Codes table. Three of these instructions are listed as RESERVED and should not be used. The other five instructions are described in detail below. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO balls. To execute the instruction once it is shifted in, the TAP controller needs to be moved into the Update-IR state. EXTEST The EXTEST instruction enables the preloaded data to be driven out through the system output pins. This instruction also selects the boundary scan register to be connected for serial access between the TDI and TDO in the shift-DR controller state. IDCODE The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO balls and allows Document #: 38-05557 Rev. *D The user must be aware that the TAP controller clock can only operate at a frequency up to 20 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output will undergo a transition. The TAP may then try to capture a signal while in transition (metastable state). This will not harm the device, but there is no guarantee as to the value that will be captured. Repeatable results may not be possible. To guarantee that the boundary scan register will capture the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller's capture set-up plus hold times (tCS and tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK captured in the boundary scan register. Once the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. PRELOAD allows an initial data pattern to be placed at the latched parallel outputs of the boundary scan register cells prior to the selection of another boundary scan test operation. The shifting of data for the SAMPLE and PRELOAD phases can occur concurrently when required—that is, while data captured is shifted out, the preloaded data can be shifted in. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO balls. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. EXTEST Output Bus Tri-State IEEE Standard 1149.1 mandates that the TAP controller be able to put the output bus into a tri-state mode. The boundary scan register has a special bit located at bit #85 (for 119-BGA package) or bit #89 (for 165-fBGA package). When this scan cell, called the “extest output bus tri-state,” is latched into the preload register during the “Update-DR” state Page 13 of 28 CY7C1371DV25 CY7C1373DV25 in the TAP controller, it will directly control the state of the output (Q-bus) pins, when the EXTEST is entered as the current instruction. When HIGH, it will enable the output buffers to drive the output bus. When LOW, this bit will place the output bus into a High-Z condition. register. When the EXTEST instruction is entered, this bit will directly control the output Q-bus pins. Note that this bit is preset HIGH to enable the output when the device is powered-up, and also when the TAP controller is in the “Test-Logic-Reset” state. This bit can be set by entering the SAMPLE/PRELOAD or EXTEST command, and then shifting the desired bit into that cell, during the “Shift-DR” state. During “Update-DR,” the value loaded into that shift-register cell will latch into the preload Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. TAP Timing 1 2 Test Clock (TCK) 3 t TH t TMSS t TMSH t TDIS t TDIH t TL 4 5 6 t CYC Test Mode Select (TMS) Test Data-In (TDI) t TDOV t TDOX Test Data-Out (TDO) DON’T CARE UNDEFINED TAP AC Switching Characteristics Over the Operating Range[10, 11] Parameter Description Min. Max. Unit Clock tTCYC TCK Clock Cycle Time tTF TCK Clock Frequency tTH TCK Clock HIGH time 20 ns tTL TCK Clock LOW time 20 ns 50 ns 20 MHz Output Times tTDOV TCK Clock LOW to TDO Valid tTDOX TCK Clock LOW to TDO Invalid 10 ns 0 ns Set-up Times tTMSS TMS Set-up to TCK Clock Rise 5 ns tTDIS TDI Set-up to TCK Clock Rise 5 ns tCS Capture Set-up to TCK Rise 5 tTMSH TMS hold after TCK Clock Rise 5 tTDIH TDI Hold after Clock Rise 5 ns tCH Capture Hold after Clock Rise 5 ns Hold Times ns Notes: 10. tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register. 11. Test conditions are specified using the load in TAP AC test Conditions. tR/tF = 1 ns. Document #: 38-05557 Rev. *D Page 14 of 28 CY7C1371DV25 CY7C1373DV25 2.5V TAP AC Test Conditions 2.5V TAP AC Output Load Equivalent 1.25V Input pulse levels ............................................... .VSS to 2.5V Input rise and fall time..................................................... 1 ns 50Ω Input timing reference levels .........................................1.25V Output reference levels.................................................1.25V TDO Test load termination supply voltage.............................1.25V Z O= 50Ω 20pF TAP DC Electrical Characteristics And Operating Conditions (0°C < TA < +70°C; VDD = 2.5V ±0.125V unless otherwise noted)[12] Parameter Description Test Conditions Min. Max. Unit VOH1 Output HIGH Voltage IOH = –1.0 mA, VDDQ = 2.5V 2.0 V VOH2 Output HIGH Voltage IOH = –100 µA, VDDQ = 2.5V 2.1 V VOL1 Output LOW Voltage IOL = 8.0 mA, VDDQ = 2.5V 0.4 V VOL2 Output LOW Voltage IOL = 100 µA 0.2 V VIH Input HIGH Voltage VDDQ = 2.5V 1.7 VDD + 0.3 V VIL Input LOW Voltage VDDQ = 2.5V –0.3 0.7 V IX Input Load Current –5 5 µA VDDQ = 2.5V GND < VIN < VDDQ Identification Register Definitions Instruction Field CY7C1371DV25 (512Kx36) CY7C1373DV25 (1Mx18) Revision Number (31:29) 000 000 Device Depth (28:24)[13] 01011 01011 Description Describes the version number Reserved for internal use Device Width (23:18) 001001 001001 Defines memory type and architecture Cypress Device ID (17:12) 100101 010101 Defines width and density 00000110100 00000110100 1 1 Cypress JEDEC ID Code (11:1) ID Register Presence Indicator (0) Allows unique identification of SRAM vendor Indicates the presence of an ID register Scan Register Sizes Register Name Instruction Bit Size (x36) Bit Size (x18) 3 3 Bypass 1 1 ID 32 32 Boundary Scan Order (119-ball BGA package) 85 85 Boundary Scan Order (165-ball FBGA package) 89 89 Notes: 12. All voltages referenced to VSS (GND). 13. Bit #24 is “1” in the Register Definitions for both 2.5v and 3.3v versions of this device. Document #: 38-05557 Rev. *D Page 15 of 28 CY7C1371DV25 CY7C1373DV25 Identification Codes Instruction Code Description EXTEST 000 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM outputs to High-Z state. IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operations. SAMPLE Z 010 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High-Z state. RESERVED 011 Do Not Use: This instruction is reserved for future use. SAMPLE/PRELOAD 100 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Does not affect SRAM operation. RESERVED 101 Do Not Use: This instruction is reserved for future use. RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. 119-Ball BGA Boundary Scan Order [14, 15] Bit # Ball ID Bit # Ball ID Bit # Ball ID Bit # Ball ID 1 H4 23 F6 45 G4 67 L1 2 T4 24 E7 46 A4 68 M2 3 T5 25 D7 47 G3 69 N1 4 T6 26 H7 48 C3 70 P1 5 R5 27 G6 49 B2 71 K1 6 L5 28 E6 50 B3 72 L2 7 R6 29 D6 51 A3 73 N2 8 U6 30 C7 52 C2 74 P2 9 R7 31 B7 53 A2 75 R3 10 T7 32 C6 54 B1 76 T1 11 P6 33 A6 55 C1 77 R1 12 N7 34 C5 56 D2 78 T2 13 M6 35 B5 57 E1 79 L3 14 L7 36 G5 58 F2 80 R2 15 K6 37 B6 59 G1 81 T3 16 P7 38 D4 60 H2 82 L4 17 N6 39 B4 61 D1 83 N4 18 L6 40 F4 62 E2 84 P4 19 K7 41 M4 63 G2 85 Internal 20 J5 42 A5 64 H1 21 H6 43 K4 65 J3 22 G7 44 E4 66 2K Notes: 14. Balls which are NC (No Connect) are pre-set LOW. 15. Bit# 85 is pre-set HIGH. Document #: 38-05557 Rev. *D Page 16 of 28 CY7C1371DV25 CY7C1373DV25 165-Ball BGA Boundary Scan Order [14, 16] Bit # Ball ID Bit # Ball ID Bit # Ball ID 1 N6 31 D10 61 G1 2 N7 32 C11 62 D2 3 N10 33 A11 63 E2 4 P11 34 B11 64 F2 5 P8 35 A10 65 G2 6 R8 36 B10 66 H1 7 R9 37 A9 67 H3 8 P9 38 B9 68 J1 9 P10 39 C10 69 K1 10 R10 40 A8 70 L1 11 R11 41 B8 71 M1 12 H11 42 A7 72 J2 13 N11 43 B7 73 K2 14 M11 44 B6 74 L2 15 L11 45 A6 75 M2 16 K11 46 B5 76 N1 17 J11 47 A5 77 N2 18 M10 48 A4 78 P1 19 L10 49 B4 79 R1 20 K10 50 B3 80 R2 21 J10 51 A3 81 P3 22 H9 52 A2 82 R3 23 H10 53 B2 83 P2 24 G11 54 C2 84 R4 25 F11 55 B1 85 P4 26 E11 56 A1 86 N5 27 D11 57 C1 87 P6 28 G10 58 D1 88 R6 29 F10 59 E1 89 Internal 30 E10 60 F1 Note: 16. Bit# 89 is pre-set HIGH. Document #: 38-05557 Rev. *D Page 17 of 28 CY7C1371DV25 CY7C1373DV25 Maximum Ratings DC Input Voltage ................................... –0.5V to VDD + 0.5V (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage........................................... >2001V (per MIL-STD-883, Method 3015) Latch-up Current..................................................... >200 mA Operating Range Supply Voltage on VDD Relative to GND........ –0.5V to +3.6V Supply Voltage on VDDQ Relative to GND ...... –0.5V to +VDD DC Voltage Applied to Outputs in Tri-State........................................... –0.5V to VDDQ + 0.5V Range Commercial Industrial Ambient Temperature 0°C to +70°C –40°C to +85°C VDD/VDDQ 2.5V + _ 5% Electrical Characteristics Over the Operating Range[17, 18] Parameter Description Test Conditions Min. Max. Unit 2.375 2.625 V 2.375 VDD V VDD Power Supply Voltage VDDQ I/O Supply Voltage for 2.5V I/O VOH Output HIGH Voltage for 2.5V I/O, IOH = −1.0 mA VOL Output LOW Voltage for 2.5V I/O, IOL= 1.0 mA 0.4 V VIH Input HIGH Voltage[17] for 2.5V I/O 1.7 VDD + 0.3V V VIL Input LOW Voltage[17] for 2.5V I/O –0.3 0.7 V IX Input Leakage Current except ZZ and MODE –5 5 µA 2.0 GND ≤ VI ≤ VDDQ Input Current of MODE Input = VSS 5 Input = VSS Output Leakage Current GND ≤ VI ≤ VDD, Output Disabled IDD VDD Operating Supply Current VDD = Max., IOUT = 0 mA, f = fMAX = 1/tCYC Automatic CE Power-down Current—TTL Inputs VDD = Max, Device Deselected, VIN ≥ VIH or VIN ≤ VIL f = fMAX, inputs switching ISB1 30 µA 5 µA 7.5-ns cycle, 133 MHz 210 mA 10-ns cycle, 100 MHz 175 mA 7.5-ns cycle, 133 MHz 140 mA 10-ns cycle, 100 MHz 120 mA All speeds 70 mA 130 mA 110 mA 80 mA –5 ISB2 Automatic CE VDD = Max, Device Deselected, Power-down VIN ≤ 0.3V or VIN > VDD – 0.3V, Current—CMOS Inputs f = 0, inputs static ISB3 Automatic CE VDD = Max, Device Deselected, or 7.5-ns cycle, 133 MHz Power-down VIN ≤ 0.3V or VIN > VDDQ – 0.3V 10-ns cycle, 100 MHz Current—CMOS Inputs f = fMAX, inputs switching Automatic CE VDD = Max, Device Deselected, All Speeds Power-down VIN ≥ VDD – 0.3V or VIN ≤ 0.3V, Current—TTL Inputs f = 0, inputs static ISB4 µA µA –5 Input = VDD IOZ µA –30 Input = VDD Input Current of ZZ V Notes: 17. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2). 18. TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD. Document #: 38-05557 Rev. *D Page 18 of 28 CY7C1371DV25 CY7C1373DV25 Capacitance[19] Parameter CIN Description Test Conditions Input Capacitance TA = 25°C, f = 1 MHz, VDD = 2.5V Clock Input Capacitance VDDQ = 2.5V Input/Output Capacitance CCLK CI/O 100 TQFP Package 119 BGA Package 165 FBGA Package Unit 5 8 9 pF 5 8 9 pF 5 8 9 pF Thermal Resistance[19] Parameter Description ΘJA Thermal Resistance (Junction to Ambient) ΘJC Thermal Resistance (Junction to Case) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. 100 TQFP Package 119 BGA Package 165 FBGA Package Unit 28.66 23.8 20.7 °C/W 4.08 6.2 4.0 °C/W AC Test Loads and Waveforms 2.5V I/O Test Load R = 1667Ω 2.5V OUTPUT Z0 = 50Ω 10% R = 1538Ω VT = 1.25V INCLUDING JIG AND SCOPE 90% 10% 90% GND 5 pF (a) ALL INPUT PULSES VDDQ OUTPUT RL = 50Ω (b) ≤ 1 ns ≤ 1 ns (c) Note: 19. Tested initially and after any design or process change that may affect these parameters. Document #: 38-05557 Rev. *D Page 19 of 28 CY7C1371DV25 CY7C1373DV25 Switching Characteristics Over the Operating Range[24, 25] 133 MHz Parameter tPOWER Description [20] Min. Max. 100 MHz Min. Max. Unit 1 1 ms Clock tCYC Clock Cycle Time 7.5 10 ns tCH Clock HIGH 2.1 2.5 ns tCL Clock LOW 2.1 2.5 ns Output Times tCDV Data Output Valid After CLK Rise tDOH Data Output Hold After CLK Rise [21, 22, 23] 6.5 2.0 8.5 2.0 ns tCLZ Clock to Low-Z tCHZ Clock to High-Z[21, 22, 23] 4.0 5.0 ns tOEV OE LOW to Output Valid 3.2 3.8 ns tOELZ tOEHZ OE LOW to Output Low-Z[21, 22, 23] OE HIGH to Output High-Z[21, 22, 23] 2.0 ns 2.0 0 ns 0 4.0 ns 5.0 ns Set-up Times tAS Address Set-up Before CLK Rise 1.5 1.5 ns tALS ADV/LD Set-up Before CLK Rise 1.5 1.5 ns tWES WE, BWX Set-up Before CLK Rise 1.5 1.5 ns tCENS CEN Set-up Before CLK Rise 1.5 1.5 ns tDS Data Input Set-up Before CLK Rise 1.5 1.5 ns tCES Chip Enable Set-Up Before CLK Rise 1.5 1.5 ns tAH Address Hold After CLK Rise 0.5 0.5 ns tALH ADV/LD Hold After CLK Rise 0.5 0.5 ns tWEH WE, BWX Hold After CLK Rise 0.5 0.5 ns tCENH CEN Hold After CLK Rise 0.5 0.5 ns tDH Data Input Hold After CLK Rise 0.5 0.5 ns tCEH Chip Enable Hold After CLK Rise 0.5 0.5 ns Hold Times Notes: 20. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially, before a read or write operation can be initiated. 21. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage. 22. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions. 23. This parameter is sampled and not 100% tested. 24. Timing reference level is 1.25V when VDDQ = 2.5V. 25. Test conditions shown in (a) of AC Test Loads unless otherwise noted. Document #: 38-05557 Rev. *D Page 20 of 28 CY7C1371DV25 CY7C1373DV25 Switching Waveforms Read/Write Waveforms[26, 27, 28] 1 2 3 tCYC 4 5 6 7 8 9 A5 A6 A7 10 CLK tCENS tCENH tCES tCEH tCH tCL CEN CE ADV/LD WE BWX A1 ADDRESS tAS A2 A4 A3 tCDV tAH tDOH tCLZ DQ D(A1) tDS D(A2) Q(A3) D(A2+1) tOEV Q(A4+1) Q(A4) tOELZ WRITE D(A1) WRITE D(A2) D(A5) Q(A6) D(A7) WRITE D(A7) DESELECT tOEHZ tDH OE COMMAND tCHZ BURST WRITE D(A2+1) READ Q(A3) READ Q(A4) DON’T CARE BURST READ Q(A4+1) tDOH WRITE D(A5) READ Q(A6) UNDEFINED Notes: 26. For this waveform ZZ is tied LOW. 27. When CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH, CE1 is HIGH or CE2 is LOW or CE3 is HIGH. 28. Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved). Burst operations are optional. Document #: 38-05557 Rev. *D Page 21 of 28 CY7C1371DV25 CY7C1373DV25 Switching Waveforms (continued) NOP, STALL AND DESELECT Cycles[26, 27, 29] 1 2 3 tCYC 4 5 6 7 8 9 A5 A6 A7 10 CLK tCENS tCENH tCH tCL CEN tCES tCEH CE ADV/LD WE BWX A1 ADDRESS tAS A2 A4 A3 tCDV tAH tDOH tCLZ DQ D(A1) tDS D(A2) Q(A3) D(A2+1) tOEV Q(A4+1) Q(A4) tOELZ WRITE D(A1) WRITE D(A2) D(A5) Q(A6) D(A7) WRITE D(A7) DESELECT tOEHZ tDH OE COMMAND tCHZ BURST WRITE D(A2+1) READ Q(A3) READ Q(A4) DON’T CARE BURST READ Q(A4+1) tDOH WRITE D(A5) READ Q(A6) UNDEFINED Note: 29. The Ignore Clock Edge or Stall cycle (Clock 3) illustrates CEN being used to create a pause. A write is not performed during this cycle. Document #: 38-05557 Rev. *D Page 22 of 28 CY7C1371DV25 CY7C1373DV25 Switching Waveforms (continued) ZZ Mode Timing[30, 31] CLK t ZZ ZZ I t ZZREC t ZZI SUPPLY I DDZZ t RZZI ALL INPUTS (except ZZ) Outputs (Q) DESELECT or READ Only High-Z DON’T CARE Notes: 30. Device must be deselected when entering ZZ mode. See truth table for all possible signal conditions to deselect the device. 31. DQs are in high-Z when exiting ZZ sleep mode. Document #: 38-05557 Rev. *D Page 23 of 28 CY7C1371DV25 CY7C1373DV25 Ordering Information Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) 133 Ordering Code CY7C1371DV25-133AXC Package Diagram Operating Range Part and Package Type 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Commercial CY7C1373DV25-133AXC CY7C1371DV25-133BGC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) CY7C1373DV25-133BGC CY7C1371DV25-133BGXC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free CY7C1373DV25-133BGXC CY7C1371DV25-133BZC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) CY7C1373DV25-133BZC CY7C1371DV25-133BZXC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free CY7C1373DV25-133BZXC CY7C1371DV25-133AXI 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free lndustrial CY7C1373DV25-133AXI CY7C1371DV25-133BGI 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) CY7C1373DV25-133BGI CY7C1371DV25-133BGXI 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free CY7C1373DV25-133BGXI CY7C1371DV25-133BZI 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) CY7C1373DV25-133BZI CY7C1371DV25-133BZXI 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free CY7C1373DV25-133BZXI 100 CY7C1371DV25-100AXC 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Commercial CY7C1373DV25-100AXC CY7C1371DV25-100BGC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) CY7C1373DV25-100BGC CY7C1371DV25-100BGXC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free CY7C1373DV25-100BGXC CY7C1371DV25-100BZC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) CY7C1373DV25-100BZC CY7C1371DV25-100BZXC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free CY7C1373DV25-100BZXC CY7C1371DV25-100AXI 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free lndustrial CY7C1373DV25-100AXI CY7C1371DV25-100BGI 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) CY7C1373DV25-100BGI CY7C1371DV25-100BGXI 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free CY7C1373DV25-100BGXI CY7C1371DV25-100BZI 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) CY7C1373DV25-100BZI CY7C1371DV25-100BZXI 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free CY7C1373DV25-100BZXI Document #: 38-05557 Rev. *D Page 24 of 28 CY7C1371DV25 CY7C1373DV25 Package Diagrams 100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) (51-85050) 16.00±0.20 1.40±0.05 14.00±0.10 81 100 80 1 20.00±0.10 22.00±0.20 0.30±0.08 0.65 TYP. 30 12°±1° (8X) SEE DETAIL A 51 31 50 0.20 MAX. R 0.08 MIN. 0.20 MAX. 0.10 1.60 MAX. 0° MIN. SEATING PLANE STAND-OFF 0.05 MIN. 0.15 MAX. 0.25 NOTE: 1. JEDEC STD REF MS-026 GAUGE PLANE 0°-7° R 0.08 MIN. 0.20 MAX. 2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS 0.60±0.15 0.20 MIN. 51-85050-*B 1.00 REF. DETAIL Document #: 38-05557 Rev. *D A Page 25 of 28 CY7C1371DV25 CY7C1373DV25 Package Diagrams (continued) 119-Ball BGA (14 x 22 x 2.4 mm) (51-85115) Ø0.05 M C Ø0.25 M C A B A1 CORNER Ø0.75±0.15(119X) Ø1.00(3X) REF. 1 2 3 4 5 6 7 7 6 5 4 3 2 1 A A B B C D 1.27 C D E E F F H 19.50 J K L 20.32 G H 22.00±0.20 G J K L M 10.16 M N P N P R R T T U U 1.27 0.70 REF. A 3.81 7.62 30° TYP. 14.00±0.20 0.15(4X) 0.15 C 2.40 MAX. B 0.90±0.05 0.25 C 12.00 51-85115-*B C Document #: 38-05557 Rev. *D 0.60±0.10 0.56 SEATING PLANE Page 26 of 28 CY7C1371DV25 CY7C1373DV25 Package Diagrams (continued) 165 FBGA 13 x 15 x 1.40 MM BB165D/BW165D 165-Ball FBGA (13 x 15 x 1.4 mm) (51-85180) BOTTOM VIEW PIN 1 CORNER BOTTOM VIEW TOP VIEW PIN 1 CORNER TOP VIEW Ø0.05 M C Ø0.25 MØ0.05 CAB MC PIN 1 CORNER Ø0.25 M C A B Ø0.50 -0.06 (165X) PIN 1 CORNER 1 2 +0.14 4 2 5 3 6 4 7 5 8 6 9 7 10 11 8 9 11 10 11 10 9 11 8 10 7 9 6 8 5 7 Ø0.50 -0.06 (165X) 4 6 1 3 +0.14 2 5 4 3 2 1A B A C B C B D C D C E D F 1.00 A 1.00 B F E G F G F H G H G J H K J L K M L N M P N P N R P R P 7.00 7.00 14.00 D E 14.00 15.00±0.10 E 15.00±0.10 15.00±0.10 A 15.00±0.10 3 1 J H K J L K M L N M R R A A A 1.00 5.00 A 1.00 5.00 10.00 10.00 B B 13.00±0.10 B 13.00±0.10 B 13.00±0.10 13.00±0.10 SEATING PLANE NOTES : NOTES : SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD) PACKAGE WEIGHT SOLDER PAD: 0.475g TYPE : NON-SOLDER MASK DEFINED (NSMD) JEDEC REFERENCE : MO-216 / DESIGN 4.6C PACKAGE WEIGHT : 0.475g PACKAGE CODE : BB0AC : MO-216 / DESIGN 4.6C JEDEC REFERENCE PACKAGE CODE : BB0AC 51-85180-*A 0.35±0.06 C 0.35±0.06 0.36 0.36 SEATING PLANE C 0.15 C 1.40 MAX. 1.40 MAX. 0.15(4X) 0.15 C 0.53±0.05 0.53±0.05 0.25 C 0.25 C 0.15(4X) 51-85180-*A NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device Technology, Inc. All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-05557 Rev. *D Page 27 of 28 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C1371DV25 CY7C1373DV25 Document History Page Document Title: CY7C1371DV25/CY7C1373DV25 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture Document Number: 38-05557 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 254513 See ECN RKF New data sheet *A 288531 See ECN SYT Edited description under “IEEE 1149.1 Serial Boundary Scan (JTAG)” for non-compliance with 1149.1 Removed 117 Mhz Speed Bin Added lead-free information for 100-Pin TQFP, 119 BGA and 165 FBGA package Added comment of ‘Lead-free BG packages availability’ below the Ordering Information *B 326078 See ECN PCI Address expansion pins/balls in the pinouts for all packages are modified as per JEDEC standard Added description on EXTEST Output Bus Tri-State Changed description on the Tap Instruction Set Overview and Extest Changed ΘJA and ΘJC for TQFP Package from 31 and 6 °C/W to 28.66 and 4.08 °C/W respectively Changed ΘJA and ΘJC for BGA Package from 45 and 7 °C/W to 23.8 and 6.2 °C/W respectively Changed ΘJA and ΘJC for FBGA Package from 46 and 3 °C/W to 20.7 and 4.0 °C/W respectively Modified VOL, VOH test conditions Removed comment of ‘Lead-free BG packages availability’ below the Ordering Information Updated Ordering Information Table *C 416321 See ECN NXR Converted From Preliminary to Final Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North First Street” to “198 Champion Court” Corrected typo in Partial Truth Table for Read/Write of CY7C1373DV25 on page #11 Changed the description of IX from Input Load Current to Input Leakage Current on page# 20 Changed the Ix current values of MODE on page # 20 from -5 µA and 30 µA to -30 µA and 5 µA Changed the Ix current values of ZZ on page # 20 from -30 µA and 5 µA to -5 µA and 30 µA Changed VIH < VDD to VIH < VDDon page # 20 Replaced Package Name column with Package Diagram in the Ordering Information table Updated Ordering Information Table *D 475677 See ECN VKN Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND. Changed tTH, tTL from 25 ns to 20 ns and tTDOV from 5 ns to 10 ns in TAP AC Switching Characteristics table. Updated the Ordering Information table. Document #: 38-05557 Rev. *D Page 28 of 28