isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUT21BF/CF DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min)- BUT21BF 450V(Min)- BUT21CF ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO PARAMETER Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage VALUE BUT21BF 750 BUT21CF 850 BUT21BF 400 BUT21CF 450 UNIT V V Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @ TC=25℃ 20 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient isc website：www.iscsemi.cn MAX UNIT 6.46 ℃/W 55 ℃/W 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUT21BF/CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage CONDITIONS MIN TYP. MAX 400 BUT21BF IC= 0.1A ;IB= 0; L= 25mH BUT21CF BUT21BF UNIT V 450 IC= 3A; IB= 0.4A 1.5 V BUT21CF IC= 3A; IB= 0.5A 1.5 BUT21BF IC= 3A; IB= 0.4A 1.5 BUT21CF IC= 3A; IB= 0.5A 1.5 V ICES Collector Cutoff Current VCE= VCESmax;VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 9V; IC=0 10 mA hFE DC Current Gain IC= 0.5A ; VCE= 10V 1.0 μs 4.5 μs 0.7 μs 25 Switching Times; Resistive Load ton Turn-On Time tstg Storage Time VCC= 250V, tp= 20μs, T= 2ms For BUT21BF IC= 3A; IB1= -IB2= 0.4A Fall Time For BUT21CF IC= 3A; IB1= -IB2= 0.5A tf isc website：www.iscsemi.cn 2