Cypress CY14B104MA-ZS25XIT 4 mbit (512k x 8/256k x 16) nvsram with real-time-clock Datasheet

PRELIMINARY
CY14B104KA, CY14B104MA
4 Mbit (512K x 8/256K x 16) nvSRAM with
Real-Time-Clock
Features
■
Watchdog timer
■
20 ns, 25 ns, and 45 ns access times
■
Clock alarm with programmable interrupts
■
Internally organized as 512K x 8 (CY14B104KA) or 256K x 16
(CY14B104MA)
■
Capacitor or battery backup for RTC
■
Commercial and industrial temperatures
Hands off automatic STORE on power down with only a small
capacitor
■
44 and 54-pin TSOP II package
■
Pb-free and RoHS compliance
■
■
STORE to QuantumTrap® nonvolatile elements is initiated by
software, device pin, or AutoStore® on power down
■
RECALL to SRAM initiated by software or power up
■
High reliability
■
Infinite read, write, and recall cycles
■
200,000 STORE cycles to QuantumTrap
■
20 year data retention
■
Single 3V +20%, –10% operation
■
Data integrity of Cypress nvSRAM combined with full featured
Real-Time-Clock
Logic Block Diagram[1, 2, 3]
Functional Description
The Cypress CY14B104KA/CY14B104MA combines a 4-Mbit
nonvolatile static RAM with a full featured real-time-clock in a
monolithic integrated circuit. The embedded nonvolatile
elements incorporate QuantumTrap technology producing the
world’s most reliable nonvolatile memory. The SRAM is read and
written infinite number of times, while independent nonvolatile
data resides in the nonvolatile elements.
The real-time-clock function provides an accurate clock with leap
year tracking and a programmable, high accuracy oscillator. The
alarm function is programmable for one time alarms or periodic
seconds, minutes, hours, or days. There is also a programmable
watchdog timer for process control.
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Notes
1. Address A0 - A18 for x8 configuration and Address A0 - A17 for x16 configuration.
2. Data DQ0 - DQ7 for x8 configuration and Data DQ0 - DQ15 for x16 configuration.
3. BHE and BLE are applicable for x16 configuration only.
Cypress Semiconductor Corporation
Document #: 001-07103 Rev. *J
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised November 3, 2008
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
Pinouts
Figure 1. Pin Diagram - 44/54-Pin TSOP II
INT
[5]
NC
A0
A1
A2
A3
A4
CE
DQ0
DQ1
VCC
VSS
DQ2
DQ3
WE
A5
A6
A7
A8
A9
X1
X2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
44 - TSOP II
(x8)
Top View
(not to scale)
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
19
20
21
22
HSB
NC
[4]
NC
A18
A17
A16
A15
OE
DQ7
DQ6
VSS
VCC
DQ5
DQ4
VCAP
A14
A13
A12
A11
A10
VRTCcap
VRTCbat
INT
[5]
NC
A0
A1
A2
A3
A4
CE
DQ0
DQ1
DQ2
DQ3
VCC
VSS
DQ4
DQ5
DQ6
DQ7
WE
A5
A6
A7
A8
A9
NC
X1
X2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
54
53
52
51
50
49
54 - TSOP II
(x16)
Top View
(not to scale)
19
20
21
22
23
24
25
26
27
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
HSB
[4]
NC
A17
A16
A15
OE
BHE
BLE
DQ15
DQ14
DQ13
DQ12
VSS
VCC
DQ11
DQ10
DQ9
DQ8
VCAP
A14
A13
A12
A11
A10
NC
VRTCcap
VRTCbat
Pin Definitions
Pin Name
IO Type
A0 – A18
Input
A0 – A17
DQ0 – DQ7
Address Inputs Used to Select one of the 524,288 bytes of the nvSRAM for x8 Configuration.
Address Inputs Used to Select one of the 262,144 words of the nvSRAM for x16 Configuration.
Input/Output Bidirectional Data IO Lines for x8 Configuration. Used as input or output lines depending on
operation.
Bidirectional Data IO Lines for x16 Configuration. Used as input or output lines depending on
operation.
DQ0 – DQ15
NC
Description
No Connect No Connects. This pin is not connected to the die.
Input
Write Enable Input, Active LOW. When selected LOW, data on the IO pins is written to the specific
address location.
Input
Chip Enable Input, Active LOW. When LOW, selects the chip. When HIGH, deselects the chip.
Input
Output Enable, Active LOW. The active LOW OE input enables the data output buffers during read
cycles. Deasserting OE HIGH causes the IO pins to tri-state.
BHE
Input
Byte High Enable, Active LOW. Controls DQ15 - DQ8.
BLE
X1
Input
Byte Low Enable, Active LOW. Controls DQ7 - DQ0.
WE
CE
OE
X2
Output
Input
Crystal Connection. Drives crystal on start up.
Crystal Connection. For 32.768 KHz crystal.
VRTCcap
Power Supply Capacitor Supplied Backup RTC Supply Voltage. Left unconnected if VRTCbat is used.
VRTCbat
Power Supply Battery Supplied Backup RTC Supply Voltage. Left unconnected if VRTCcap is used.
Notes
4. Address expansion for 8 Mbit. NC pin not connected to die.
5. Address expansion for 16 Mbit. NC pin not connected to die.
Document #: 001-07103 Rev. *J
Page 2 of 31
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PRELIMINARY
CY14B104KA, CY14B104MA
Pin Definitions (continued)
Pin Name
IO Type
INT
Output
Interrupt Output. Programmable to respond to the clock alarm, the watchdog timer, and the power
monitor. Also programmable to either active HIGH (push or pull) or LOW (open drain).
VSS
Ground
Ground for the Device. Must be connected to ground of the system.
HSB
VCAP
Power Supply Power Supply Inputs to the Device. 3.0V +20%, –10%
Input/Output Hardware Store Busy (HSB). When LOW this output indicates that a hardware store is in progress.
When pulled LOW external to the chip it initiates a nonvolatile STORE operation. A weak internal pull
up resistor keeps this pin HIGH if not connected (connection optional). After each store operation HSB
is driven HIGH for short time with standard output high current.
Power Supply AutoStore Capacitor. Supplies power to the nvSRAM during power loss to store data from SRAM to
nonvolatile elements.
Device Operation
The CY14B104KA/CY14B104MA nvSRAM is made up of two
functional components paired in the same physical cell. These
are a SRAM memory cell and a nonvolatile QuantumTrap cell.
The SRAM memory cell operates as a standard fast static RAM.
Data in the SRAM is transferred to the nonvolatile cell (the
STORE operation), or from the nonvolatile cell to the SRAM (the
RECALL operation). Using this unique architecture, all cells are
stored and recalled in parallel. During the STORE and RECALL
operations SRAM read and write operations are inhibited. The
CY14B104KA/CY14B104MA supports infinite reads and writes
similar to a typical SRAM. In addition, it provides infinite RECALL
operations from the nonvolatile cells and up to 200K STORE
operations. See the “Truth Table For SRAM Operations” on
page 23 for a complete description of read and write modes.
SRAM Read
The CY14B104KA/CY14B104MA performs a read cycle
whenever CE and OE are LOW, and WE and HSB are HIGH.
The address specified on pins A0-18 or A0-17 determines which
of the 524,288 data bytes or 262,144 words of 16 bits each are
accessed. Byte enables (BHE, BLE) determine which bytes are
enabled to the output, in the case of 16-bit words. When the read
is initiated by an address transition, the outputs are valid after a
delay of tAA (read cycle 1). If the read is initiated by CE or OE,
the outputs are valid at tACE or at tDOE, whichever is later (read
cycle 2). The data output repeatedly responds to address
changes within the tAA access time without the need for transitions on any control input pins. This remains valid until another
address change or until CE or OE is brought HIGH, or WE or
HSB is brought LOW.
SRAM Write
A write cycle is performed when CE and WE are LOW and HSB
is HIGH. The address inputs must be stable before entering the
write cycle and must remain stable until CE or WE goes HIGH at
the end of the cycle. The data on the common IO pins DO0-15 are
written into the memory if it is valid tSD before the end of a WE
controlled write or before the end of a CE controlled write. The
Byte Enable inputs (BHE, BLE) determine which bytes are
written, in the case of 16-bit words. Keep OE HIGH during the
entire write cycle to avoid data bus contention on common IO
Document #: 001-07103 Rev. *J
lines. If OE is left LOW, internal circuitry turns off the output
buffers tHZWE after WE goes LOW.
AutoStore Operation
The CY14B104KA/CY14B104MA stores data to the nvSRAM
using one of three storage operations. These three operations
are: hardware store, activated by the HSB; software store,
activated by an address sequence; AutoStore, on device power
down. The AutoStore operation is a unique feature of
QuantumTrap technology and is enabled by default on the
CY14B104KA/CY14B104MA.
During normal operation, the device draws current from VCC to
charge a capacitor connected to the VCAP pin. This stored
charge is used by the chip to perform a single STORE operation.
If the voltage on the VCC pin drops below VSWITCH, the part
automatically disconnects the VCAP pin from VCC. A STORE
operation is initiated with power provided by the VCAP capacitor.
Figure 2. AutoStore Mode
Vcc
0.1uF
10kOhm
VCC
Description
Vcc
WE
VCAP
V SS
VCAP
Figure 2 shows the proper connection of the storage capacitor
(VCAP) for automatic store operation. Refer to DC Electrical
Characteristics on page 14 for the size of the VCAP. The voltage
on the VCAP pin is driven to VCC by a regulator on the chip. A pull
up should be placed on WE to hold it inactive during power up.
This pull up is only effective if the WE signal is tri-state during
Page 3 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
power up. Many MPUs tri-state their controls on power up. Verify
this when using the pull up. When the nvSRAM comes out of
power-on-recall, the MPU must be active or the WE held inactive
until the MPU comes out of reset.
Because a sequence of reads from specific addresses is used
for STORE initiation, it is important that no other read or write
accesses intervene in the sequence, or the sequence is aborted
and no STORE or RECALL takes place.
To reduce unnecessary nonvolatile stores, AutoStore and
hardware store operations are ignored unless at least one write
operation has taken place since the most recent STORE or
RECALL cycle. Software initiated STORE cycles are performed
regardless of whether a write operation has taken place. The
HSB signal is monitored by the system to detect if an AutoStore
cycle is in progress.
To initiate the software STORE cycle, the following read
sequence must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x8FC0 Initiate STORE cycle
Hardware STORE (HSB) Operation
The CY14B104KA/CY14B104MA provides the HSB pin to
control and acknowledge the STORE operations. The HSB pin
is used to request a hardware STORE cycle. When the HSB pin
is driven LOW, the CY14B104KA/CY14B104MA conditionally
initiates a STORE operation after tDELAY. An actual STORE cycle
begins only if a write to the SRAM has taken place since the last
STORE or RECALL cycle. The HSB pin also acts as an open
drain driver that is internally driven LOW to indicate a busy
condition when the STORE (initiated by any means) is in
progress.
The software sequence may be clocked with CE controlled reads
or OE controlled reads. After the sixth address in the sequence
is entered, the STORE cycle starts and the chip is disabled. It is
important to use read cycles and not write cycles in the
sequence, although it is not necessary that OE be LOW for a
valid sequence. After the tSTORE cycle time is fulfilled, the SRAM
is activated again for read and write operations.
SRAM read and write operations, that are in progress when HSB
is driven LOW by any means, are given time to complete before
the STORE operation is initiated. After HSB goes LOW, the
CY14B104KA/CY14B104MA continues SRAM operations for
tDELAY. If a write is in progress when HSB is pulled LOW it is
allowed a time, tDELAY to complete. However, any SRAM write
cycles requested after HSB goes LOW are inhibited until HSB
returns HIGH. In case the write latch is not set, HSB is not driven
LOW by the CY14B104KA/CY14B104MA but any SRAM read
and write cycles are inhibited until HSB is returned HIGH by MPU
or another external source.
Data is transferred from the nonvolatile memory to the SRAM by
a software address sequence. A software RECALL cycle is
initiated with a sequence of read operations in a manner similar
to the software STORE initiation. To initiate the RECALL cycle,
perform the following sequence of CE controlled read operations:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x4C63 Initiate RECALL cycle
During any STORE operation, regardless of how it is initiated,
the CY14B104KA/CY14B104MA continues to drive the HSB pin
LOW, releasing it only when the STORE is complete. Upon
completion
of
the
STORE
operation,
the
CY14B104KA/CY14B104MA remains disabled until the HSB pin
returns HIGH. Leave the HSB unconnected if it is not used.
Hardware RECALL (Power Up)
Software RECALL
Internally, RECALL is a two step procedure. First, the SRAM data
is cleared; then, the nonvolatile information is transferred into the
SRAM cells. After the tRECALL cycle time, the SRAM is again
ready for read and write operations. The RECALL operation
does not alter the data in the nonvolatile elements.
During power up or after any low power condition
(VCC< VSWITCH), an internal RECALL request is latched. When
VCC again exceeds the sense voltage of VSWITCH, a RECALL
cycle is automatically initiated and takes tHRECALL to complete.
During this time HSB is driven LOW by the HSB driver.
Software STORE
Data is transferred from the SRAM to the nonvolatile memory by
a software address sequence. The CY14B104KA/CY14B104MA
software STORE cycle is initiated by executing sequential CE
controlled read cycles from six specific address locations in
exact order. During the STORE cycle, an erase of the previous
nonvolatile data is first performed, followed by a program of the
nonvolatile elements. After a STORE cycle is initiated, further
input and output are disabled until the cycle is completed.
Document #: 001-07103 Rev. *J
Page 4 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
Table 1. Mode Selection
OE, BHE, BLE[3]
X
A15 - A0[6]
X
Mode
IO
Power
Not Selected
Output High Z
Standby
H
L
X
Read SRAM
Output Data
Active
L
X
X
Write SRAM
Input Data
Active
L
H
L
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x8B45
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
AutoStore
Disable
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Active[7, 8]
L
H
L
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x4B46
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
AutoStore
Enable
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Active[7, 8]
L
H
L
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x8FC0
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile
Store
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Active ICC2[7, 8]
L
H
L
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x4C63
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile
Recall
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Active[7, 8]
CE
H
WE
X
L
L
Preventing AutoStore
The AutoStore function is disabled by initiating an AutoStore
disable sequence. A sequence of read operations is performed
in a manner similar to the software STORE initiation. To initiate
the AutoStore disable sequence, the following sequence of CE
controlled read operations must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x8B45 AutoStore Disable
manner similar to the software RECALL initiation. To initiate the
AutoStore enable sequence, the following sequence of CE
controlled read operations must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x4B46 AutoStore Enable
If the AutoStore function is disabled or re-enabled, a manual
STORE operation (hardware or software) is issued to save the
AutoStore state through subsequent power down cycles. The
part comes from the factory with AutoStore enabled.
The AutoStore is re-enabled by initiating an AutoStore enable
sequence. A sequence of read operations is performed in a
Notes
6. While there are 19 address lines on the CY14B104KA (18 address lines on the CY14B104MA), only the 13 address lines (A14 - A2) are used to control software
modes. Rest of the address lines are don’t care.
7. The six consecutive address locations must be in the order listed. WE must be HIGH during all six cycles to enable a nonvolatile cycle.
8. IO state depends on the state of OE, BHE, and BLE. The IO table shown assumes OE, BHE, and BLE LOW.
Document #: 001-07103 Rev. *J
Page 5 of 31
[+] Feedback
PRELIMINARY
Data Protection
The CY14B104KA/CY14B104MA protects data from corruption
during low voltage conditions by inhibiting all externally initiated
STORE and write operations. The low voltage condition is
detected when VCC is less than VSWITCH. If the
CY14B104KA/CY14B104MA is in a write mode (both CE and
WE are LOW) at power up, after a RECALL or STORE, the write
is inhibited until the SRAM is enabled after tLZHSB (HSB to output
active). This protects against inadvertent writes during power up
or brown out conditions.
Noise Considerations
Refer to CY application note AN1064.
Real-Time-Clock Operation
nvTIME Operation
The CY14B104KA/CY14B104MA offers internal registers that
contain clock, alarm, watchdog, interrupt, and control functions.
RTC registers use the last 16 address locations of the SRAM.
Internal double buffering of the clock and the clock or timer
information registers prevents accessing transitional internal
clock data during a read or write operation. Double buffering also
circumvents disrupting normal timing counts or the clock
accuracy of the internal clock when accessing clock data. Clock
and alarm registers store data in BCD format.
RTC functionality is described with respect to CY14B104KA in
the following sections. The same description applies to
CY14B104MA, except for the RTC register addresses. The RTC
register addresses for CY14B104KA range from 0x7FFF0 to
0x7FFFF, while those for CY14B104MA range from 0x3FFF0 to
0x3FFFF. Refer to Table 3 on page 10 and Table 4 on page 11
for a detailed Register Map description.
Clock Operations
The clock registers maintain time up to 9,999 years in one
second increments. The time can be set to any calendar time and
the clock automatically keeps track of days of the week and
month, leap years, and century transitions. There are eight
registers dedicated to the clock functions, which are used to set
time with a write cycle and to read time during a read cycle.
These registers contain the time of day in BCD format. Bits
defined as ‘0’ are currently not used and are reserved for future
use by Cypress.
Reading the Clock
The double buffered RTC register structure reduces the chance
of reading incorrect data from the clock. The user must stop
internal updates to the CY14B104KA time, keeping registers
before reading clock data, to prevent reading of data in transition.
Stopping the internal register updates does not affect clock
accuracy. The updating process is stopped by writing a ‘1’ to the
read bit ‘R’ (in the flags register at 0x7FFF0), and does not restart
until a ‘0’ is written to the read bit. The RTC registers are then
read while the internal clock continues to run. After a ‘0’ is written
to the read bit (‘R’), all CY14B104KA registers are simultaneously updated within 20 ms.
Document #: 001-07103 Rev. *J
CY14B104KA, CY14B104MA
Setting the Clock
Setting the write bit ‘W’ (in the flags register at 0x7FFF0) to a ‘1’
stops updates to the time keeping registers and enables the time
to be set. The correct day, date, and time is then written into the
registers in 24 hour BCD format. The time written is referred to
as the “Base Time”. This value is stored in nonvolatile registers
and used in the calculation of the current time. Resetting the
write bit to ‘0’ transfers the register values to the actual clock
counters, after which the clock resumes normal operation.
Backup Power
The RTC in the CY14B104KA is intended for permanently
powered operation. The VRTCcap or VRTCbat pin is connected
depending on whether a capacitor or battery is chosen for the
application. When the primary power, VCC, fails and drops below
VSWITCH the device switches to the backup power supply.
The clock oscillator uses very little current, which maximizes the
backup time available from the backup source. Regardless of the
clock operation with the primary source removed, the data stored
in the nvSRAM is secure, having been stored in the nonvolatile
elements when power was lost.
During backup operation, the CY14B104KA consumes a
maximum of 300 nanoamps at 2 volts. The user must choose
capacitor or battery values according to the application. Backup
time values based on maximum current specifications are shown
in the following table. Nominal backup times are approximately
three times longer.
Table 2. RTC Backup Time
Capacitor Value
Backup Time
0.1F
72 hours
0.47F
14 days
1.0F
30 days
Using a capacitor has the advantage of recharging the backup
source each time the system is powered up. If a battery is used,
a 3V lithium is recommended and the CY14B104KA sources
current only from the battery when the primary power is removed.
The battery is not, however, recharged at any time by the
CY14B104KA. The battery capacity must be chosen for total
anticipated cumulative down time required over the life of the
system.
Stopping and Starting the Oscillator
The OSCEN bit in the calibration register at 0x7FFF8 controls
the enable and disable of the oscillator. This bit is nonvolatile and
is shipped to customers in the “enabled” (set to 0) state. To
preserve the battery life when the system is in storage, OSCEN
must be set to ‘1’. This turns off the oscillator circuit, extending
the battery life. If the OSCEN bit goes from disabled to enabled,
it takes approximately one second (two seconds maximum) for
the oscillator to start.
While system power is off, if the voltage on the backup supply
(VRTCcap or VRTCbat) falls below their respective minimum level,
the oscillator may fail.The CY14B104KA has the ability to detect
oscillator failure when system power is restored. This is recorded
in the OSCF (Oscillator Failed bit) of the flags register at the
address 0x7FFF0. When the device is powered ON (VCC goes
Page 6 of 31
[+] Feedback
PRELIMINARY
above VSWITCH) the OSCEN bit is checked for “enabled” status.
If the OSCEN bit is enabled and the oscillator is not active within
the first 5 ms, the OSCF bit is set to “1”. Check for this condition
and then write ‘0’ to clear the flag. Note that in addition to setting
the OSCF flag bit, the time registers are reset to the “Base Time”
(see Setting the Clock on page 6), which is the value last written
to the timekeeping registers. The control or calibration registers
and the OSCEN bit are not affected by the ‘oscillator failed’
condition.
The value of OSCF must be reset to ‘0’ when the time registers
are written for the first time. This initializes the state of this bit
which may have become set when the system was first powered
on.
To reset OSCF, set the write bit “W” (in the flags register at
0x7FFF0) to a “1” to enable writes to the Flag register. Write a
“0” to the OSCF bit and then reset the write bit to “0” to disable
writes.
Calibrating the Clock
The RTC is driven by a quartz controlled oscillator with a nominal
frequency of 32.768 KHz. Clock accuracy depends on the quality
of the crystal, usually specified to 35 ppm limits at 25°C. This
error could equate to +1.53 minutes per month. The
CY14B104KA employs a calibration circuit that improves the
accuracy to +1 or –2 ppm at 25°C. The calibration circuit adds or
subtracts counts from the oscillator divider circuit.
The number of times pulses are suppressed (subtracted,
negative calibration) or split (added, positive calibration)
depends on the value loaded into the five calibration bits found
in the calibration register at 0x7FFF8. Adding counts speeds the
clock up; subtracting counts slows the clock down. The
calibration bits occupy the five lower order bits in the control
register 8. These bits are set to represent any value between 0
and 31 in binary form. Bit D5 is a sign bit, where ‘1’ indicates
positive calibration and ‘0’ indicates negative calibration.
Calibration occurs within a 64 minute cycle. The first 62 minutes
in the cycle may, once per minute, have one second either
shortened by 128 or lengthened by 256 oscillator cycles.
If a binary ‘1’ is loaded into the register, only the first 2 minutes
of the 64 minute cycle are modified; if a binary ‘6’ is loaded, the
first 12 are affected, and so on. Therefore, each calibration step
has the effect of adding 512 or subtracting 256 oscillator cycles
for every 125,829,120 actual oscillator cycles; that is, 4.068 or
–2.034 ppm of adjustment for every calibration step in the
calibration register.
To determine how to set the calibration, the CAL bit in the flags
register at 0x7FFF0 is set to ‘1’, which causes the INT pin to
toggle at a nominal 512 Hz. Any deviation measured from the
512 Hz indicates the degree and direction of the required
correction. For example, a reading of 512.01024 Hz indicates a
+20 ppm error, which requires the loading of a –10 (001010) into
the calibration register. Note that setting or changing the
calibration register does not affect the frequency test output
frequency.
To set or clear CAL, set the write bit “W” (in the flags register at
0x7FFF0) to “1” to enable writes to the Flag register. Write a
value to CAL, and then reset the write bit to “0” to disable writes.
Document #: 001-07103 Rev. *J
CY14B104KA, CY14B104MA
Alarm
The alarm function compares user programmed values of alarm
time/date (stored in the registers 0x7FFF1-5) with the corresponding time of day/date values. When a match occurs, the
alarm internal flag (AF) is set and an interrupt is generated on
INT pin if Alarm Interrupt Enable (AIE) bit is set. If the interrupt is
triggered at the time when the user is reading the RTC Flags
register, it is not reflected on INT pin until the user completes the
read operation.
There are four alarm match fields: date, hours, minutes, and
seconds. Each of these fields has a match bit that is used to
determine if the field is used in the alarm match logic. Setting the
match bit to ‘0’ indicates that the corresponding field is used in
the match process. Depending on the match bits, the alarm
occurs as specifically as once a month or as frequently as once
every minute. Selecting none of the match bits (all 1s) indicates
that no match is required. In this condition, alarm is disabled.
Selecting all match values (all 0s) causes an exact time and date
match.
There are two ways to detect an alarm event: by reading the AF
flag or monitoring the INT pin. The AF flag in the flags register at
0x7FFF0 indicates that a date or time match has occurred. The
AF bit is set to “1” when a match occurs. Reading the flags or
control register clears the alarm flag bit (and all others). A
hardware interrupt pin may also be used to detect an alarm
event.
Note CY14B104KA/CY14B104MA require the alarm match bit
for seconds (0x7FFF2 - D7) to be set to ‘0’ for the proper
operation of Alarm Flag and Interrupt.
Alarm registers are not nonvolatile and therefore, they need to
be reinitialized by software on power up. To set, clear, or enable
an alarm, set the ‘W’ bit (in Flags Register - 0x7FFFF) to “1” to
enable writes to Alarm Registers. After writing the alarm value,
clear the ‘W’ bit back to “0” for the changes to take effect.
Watchdog Timer
The watchdog timer is a free running down counter that uses the
32 Hz clock (31.25 ms) derived from the crystal oscillator. The
oscillator must be running for the watchdog to function. It begins
counting down from the value loaded in the watchdog timer
register.
The counter consists of a loadable register and a free running
counter. On power up, the watchdog timeout value in register
0x7FFF7 is loaded into the counter load register. Counting
begins on power up and restarts from the loadable value any time
the Watchdog Strobe (WDS) bit is set to ‘1’. The counter is
compared to the terminal value of 0. If the counter reaches this
value, it causes an internal flag and an optional interrupt output.
The timeout interrupt is prevented by setting WDS bit to ‘1’ before
the counter reaches ‘0’. This causes the counter to reload with
the watchdog timeout value and get restarted. As long as the
WDS bit is set before the counter reaches the terminal value, the
interrupt and flag never occurs.
New timeout values are written by setting the watchdog write
(WDW) bit to ‘0’. When the WDW is ‘0’ (from the previous
operation), new writes to the watchdog timeout value bits D5–D0
enable the modification of timeout values. When WDW is ‘1’,
then writes to bits D5–D0 are ignored. The WDW function
enables setting the WDS bit without concern that the watchdog
timer value is modified. A logical diagram of the watchdog timer
Page 7 of 31
[+] Feedback
PRELIMINARY
is shown in Figure 3 on page 8. Note that setting the watchdog
timeout value to ‘0’ is otherwise meaningless and as a result,
disables the watchdog function.
The output of the watchdog timer is a flag bit WDF that is set if
the watchdog is allowed to timeout. The flag is set on a watchdog
timeout and cleared when the flags or control register is read by
the user. The user can also enable an optional interrupt source
to drive the INT pin if the watchdog timeout occurs.
Figure 3. Wachdog Timer Block Diagram
CY14B104KA, CY14B104MA
All flags are cleared to ‘0’ when the register is read. The cycle
must be a complete read cycle (WE HIGH); otherwise, the flags
are not cleared. The power monitor has two programmable
settings explained in the section Power Monitor.
After an interrupt source is active, the pin driver determines the
behavior of the output. It has two programmable settings. Pin
driver control bits are located in the interrupt register.
According to the programming selections, the pin is driven in the
backup mode for an alarm interrupt. In addition, the pin is an
active LOW (open drain) or an active HIGH (push pull) driver. If
programmed for operation during backup mode, it is active LOW.
Lastly, the pin can provide a one shot function so that the active
condition is a pulse or a level condition. In one-shot mode, the
pulse width is internally fixed at approximately 200 ms. This
mode is intended to reset a host microcontroller. In the level
mode, the pin goes to its active polarity until the flags or control
register is read by the user. This mode is used as an interrupt to
a host microcontroller. The control bits are summarized as
follows.
Watchdog Interrupt Enable - WIE. When set to ‘1’, the
watchdog timer drives the INT pin and an internal flag when a
watchdog timeout occurs. When WIE is set to ‘0’, the watchdog
timer affects only the internal flag.
.
Power Monitor
The CY14B104KA provides a power management scheme with
power fail interrupt capability. It also controls the internal switch
to backup power for the clock and protects the memory from low
VCC access. The power monitor is based on an internal bandgap
reference circuit that compares the VCC voltage to various
thresholds.
As described in the section AutoStore Operation on page 3,
when VSWITCH is reached as VCC decays from power loss, a data
store operation is initiated from SRAM to the nonvolatile
elements, securing the last SRAM data state. Power is also
switched from VCC to the backup supply (battery or capacitor) to
operate the RTC oscillator.
When operating from the backup source, no data is read or
written and the clock functions are not available to the user. The
clock continues to operate in the background. The updated clock
data is available to the user after tHRECALL delay (see
AutoStore/Power Up RECALL on page 20) after VCC is restored
to the device.
Interrupts
The CY14B104KA provides three potential interrupt sources.
They include the watchdog timer, the power monitor, and the
clock or calendar alarm. Each are individually enabled and
assigned to drive the INT pin. In addition, each has an associated
flag bit that the host processor uses to determine the cause of
the interrupt. Some sources have additional control bits that
determine functional behavior. In addition, the pin driver has
three bits that specify its behavior when an interrupt occurs.
The three interrupts each have a source and an enable. Both the
source and the enable must be active (true HIGH) to generate
an interrupt output. Only one source is necessary to drive the pin.
The user can identify the source by reading the flags or control
register, which contains the flags associated with each source.
Document #: 001-07103 Rev. *J
Alarm Interrupt Enable - AIE. When set to ‘1’, the alarm match
drives the INT pin and an internal flag. When set to ‘0’, the alarm
match only affects the internal flag.
Power Fail Interrupt Enable - PFE. When set to ‘1’, the power
fail monitor drives the pin and an internal flag. When set to ‘0’,
the power fail monitor affects only the internal flag.
High/Low - H/L. When set to a ‘1’, the INT pin is active HIGH
and the driver mode is push pull. The INT pin can drive HIGH
only when VCC > VSWITCH. When set to ‘0’, the INT pin is active
LOW and the drive mode is open drain. Active LOW (open drain)
is operational even in battery backup mode.
Pulse/Level - P/L. When set to ‘1’ and an interrupt occurs, the
INT pin is driven for approximately 200 ms. When P/L is set to
‘0’, the INT pin is driven HIGH or LOW (determined by H/L) until
the flags or control register is read.
When an enabled interrupt source activates the INT pin, an
external host can read the flags or control register to determine
the cause. All flags are cleared when the register is read. If the
INT pin is programmed for level mode, then the condition clears
and the INT pin returns to its inactive state. If the pin is
programmed for pulse mode, then reading the flag also clears
the flag and the pin. The pulse does not complete its specified
duration if the flags or control register is read. If the INT pin is
used as a host reset, then the flags or control register must not
be read during a reset. During a power on reset with no battery,
the interrupt register is automatically loaded with the value 24h.
This enables the power fail interrupt with an active LOW pulse.
Flags Register
The Flag regizster has three flag bits: WDF, AF, and PF, which
can generate an interrupt. These flags are set by the watchdog
timeout, alarm match, or power fail monitor respectively.The
processor can either poll this register or enable interrupts to be
informed when a flag is set. These flags are automatically reset
once the register is read. The flags register is automatically
loaded with the value 00h on power up except for the OSCF bit.
(See “Stopping and Starting the Oscillator” on page 6.)
Page 8 of 31
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PRELIMINARY
CY14B104KA, CY14B104MA
Figure 4. RTC Recommended Component Configuration
Recommended Values
Y1 = 32.768KHz
C1 = 0
C2 = 12 pF
Figure 5. Interrupt Block Diagram
Legend
WDF - Watchdog Timer Flag
WIE - Watchdog Interrupt Enable
PF - Power Fail Flag
PFE - Power Fail Enable
AF - Alarm Flag
AIE - Alarm Interrupt Enable
P/L - Pulse/Level
H/L - High/Low
Document #: 001-07103 Rev. *J
Page 9 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
Table 3. RTC Register Map[9, 10]
Register
CY14B104KA
CY14B104MA
0x7FFFF
0x3FFFF
0x7FFFE
0x3FFFE
BCD Format Data
D7
D6
D5
D4
D3
D2
D1
10s Years
0
0
0x7FFFD
0x3FFFD
0
0
0x7FFFC
0x3FFFC
0
0
0x7FFFB
0x3FFFB
0
0
0x7FFFA
0x3FFFA
0
0
10s
Months
10s Day of Month
0
0
D0
Years
Years: 00–99
Months
Months: 01–12
Day Of Month
Day of Month: 01–31
0
Day of week
10s Hours
10s Minutes
Day of week: 01–07
Hours
Hours: 00–23
Minutes
Minutes: 00–59
0x7FFF9
0x3FFF9
0
0x7FFF8
0x3FFF8
OSCEN
0
0x7FFF7
0x3FFF7
WDS
WDW
0x7FFF6
0x3FFF6
WIE
AIE
0x7FFF5
0x3FFF5
M
0
10s Alarm Date
Alarm Date
Alarm, Day of
Month: 01–31
0x7FFF4
0x3FFF4
M
0
10s Alarm Hours
Alarm Hours
Alarm, Hours: 00–23
0x7FFF3
0x3FFF3
M
10s Alarm Minutes
Alarm Minutes
Alarm, Minutes:
00–59
0x7FFF2
0x3FFF2
M
10s Alarm Seconds
Alarm Seconds
Alarm, Seconds:
00–59
0x7FFF1
0x3FFF1
0x7FFF0
0x3FFF0
10s Seconds
Function/Range
Seconds
Cal
Sign
AF
Calibration Values
[11]
Watchdog [11]
WDT
PFE
0
H/L
10s Centuries
WDF
Seconds: 00–59
Calibration
PF
P/L
0
0
Centuries
OSCF
0
CAL
W
Interrupts [11]
Centuries: 00–99
R
Flags[11]
Note
9. 0 - Not implemented, reserved for future use.
10. Upper Byte D15-D8 (CY14B104MA) of RTC registers are reserved for future use
11. This is a binary value, not a BCD value.
Document #: 001-07103 Rev. *J
Page 10 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
Table 4. Register Map Detail
Register
CY14B104KA
CY14B104MA
0x7FFFF
0x3FFFF
Description
Time Keeping - Years
D7
D6
D5
D4
D3
D2
10s Years
D1
D0
Years
Contains the lower two BCD digits of the year. Lower nibble (four bits) contains the value for years;
upper nibble (four bits) contains the value for 10s of years. Each nibble operates from 0 to 9. The
range for the register is 0–99.
0x7FFFE
0x3FFFE
Time Keeping - Months
D7
D6
D5
D4
0
0
0
10s Month
D3
D2
D1
D0
Months
Contains the BCD digits of the month. Lower nibble (four bits) contains the lower digit and operates
from 0 to 9; upper nibble (one bit) contains the upper digit and operates from 0 to 1. The range
for the register is 1–12.
0x7FFFD
0x3FFFD
Time Keeping - Date
D7
D6
0
0
D5
D4
D3
10s Day of Month
D2
D1
D0
Day of Month
Contains the BCD digits for the date of the month. Lower nibble (four bits) contains the lower digit
and operates from 0 to 9; upper nibble (two bits) contains the 10s digit and operates from 0 to 3.
The range for the register is 1–31. Leap years are automatically adjusted for.
0x7FFFC
0x3FFFC
Time Keeping - Day
D7
D6
D5
D4
D3
0
0
0
0
0
D2
D1
D0
Day of Week
Lower nibble (three bits) contains a value that correlates to day of the week. Day of the week is a
ring counter that counts from 1 to 7 then returns to 1. The user must assign meaning to the day
value, because the day is not integrated with the date.
0x7FFFB
0x3FFFB
Time Keeping - Hours
D7
D6
0
0
D5
D4
D3
D2
10s Hours
D1
D0
Hours
Contains the BCD value of hours in 24 hour format. Lower nibble (four bits) contains the lower
digit and operates from 0 to 9; upper nibble (two bits) contains the upper digit and operates from
0 to 2. The range for the register is 0–23.
0x7FFFA
0x3FFFA
Time Keeping - Minutes
D7
D6
0
D5
D4
D3
D2
10s Minutes
D1
D0
Minutes
Contains the BCD value of minutes. Lower nibble (four bits) contains the lower digit and operates
from 0 to 9; upper nibble (three bits) contains the upper minutes digit and operates from 0 to 5.
The range for the register is 0–59.
0x7FFF9
0x3FFF9
Time Keeping - Seconds
D7
0
D6
D5
10s Seconds
D4
D3
D2
D1
D0
Seconds
Contains the BCD value of seconds. Lower nibble (four bits) contains the lower digit and operates
from 0 to 9; upper nibble (three bits) contains the upper digit and operates from 0 to 5. The range
for the register is 0–59.
Document #: 001-07103 Rev. *J
Page 11 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
Table 4. Register Map Detail (continued)
Register
CY14B104KA
CY14B104MA
0x7FFF8
0x3FFF8
OSCEN
Description
Calibration/Control
D7
D6
D5
OSCEN
0
Calibration
Sign
D4
D3
D2
D1
D0
Calibration
Oscillator Enable. When set to 1, the oscillator is stopped. When set to 0, the oscillator runs.
Disabling the oscillator saves battery or capacitor power during storage.
Calibration
Sign
Determines if the calibration adjustment is applied as an addition (1) to or as a subtraction (0) from
the time-base.
Calibration
These five bits control the calibration of the clock.
0x7FFF7
0x3FFF7
WatchDog Timer
D7
D6
WDS
WDW
D5
D4
D3
D2
D1
D0
WDT
WDS
Watchdog Strobe. Setting this bit to 1 reloads and restarts the watchdog timer. Setting the bit to
0 has no effect. The bit is cleared automatically after the watchdog timer is reset. The WDS bit is
write only. Reading it always returns a 0.
WDW
Watchdog Write Enable. Setting this bit to 1 disables any WRITE to the watchdog timeout value
(D5–D0). This allows the user to set the watchdog strobe bit without disturbing the timeout value.
Setting this bit to 0 allows bits D5–D0 to be written to the watchdog register when the next write
cycle is complete. This function is explained in more detail in Watchdog Timer on page 7.
WDT
Watchdog timeout selection. The watchdog timer interval is selected by the 6-bit value in this
register. It represents a multiplier of the 32 Hz count (31.25 ms). The range of timeout value is
31.25 ms (a setting of 1) to 2 seconds (setting of 3 Fh). Setting the watchdog timer register to 0
disables the timer. These bits can be written only if the WDW bit was set to 0 on a previous cycle.
0x7FFF6
0x3FFF6
Interrupt Status/Control
D7
D6
D5
D4
D3
D2
D1
D0
WIE
AIE
PFE
0
H/L
P/L
0
0
WIE
Watchdog Interrupt Enable. When set to 1 and a watchdog timeout occurs, the watchdog timer
drives the INT pin and the WDF flag. When set to 0, the watchdog timeout affects only the WDF
flag.
AIE
Alarm Interrupt Enable. When set to 1, the alarm match drives the INT pin and the AF flag. When
set to 0, the alarm match only affects the AF flag.
PFE
Power Fail Enable. When set to 1, the alarm match drives the INT pin and the PF flag. When set
to 0, the power fail monitor affects only the PF flag.
0
Reserved for future use
H/L
High/Low. When set to 1, the INT pin is driven active HIGH. When set to 0, the INT pin is open
drain, active LOW.
P/L
Pulse/Level. When set to 1, the INT pin is driven active (determined by H/L) by an interrupt source
for approximately 200 ms. When set to 0, the INT pin is driven to an active level (as set by H/L)
until the flags register is read.
0x7FFF5
0x3FFF5
Alarm - Day
D7
D6
M
0
D5
D4
10s Alarm Date
D3
D2
D1
D0
Alarm Date
Contains the alarm value for the date of the month and the mask bit to select or deselect the date
value.
M
Document #: 001-07103 Rev. *J
Match. When this bit is set to 0, the date value is used in the alarm match. Setting this bit to 1
causes the match circuit to ignore the date value.
Page 12 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
Table 4. Register Map Detail (continued)
Register
CY14B104KA
CY14B104MA
0x7FFF4
0x3FFF4
Description
Alarm - Hours
D7
D6
M
D5
D4
D3
10s Alarm Hours
D2
D1
D0
Alarm Hours
Contains the alarm value for the hours and the mask bit to select or deselect the hours value.
M
0x7FFF3
Match. When this bit is set to 0, the hours value is used in the alarm match. Setting this bit to 1
causes the match circuit to ignore the hours value.
0x3FFF3
Alarm - Minutes
D7
D6
M
D5
D4
D3
10s Alarm Minutes
D2
D1
D0
Alarm Minutes
Contains the alarm value for the minutes and the mask bit to select or deselect the minutes value.
M
0x7FFF2
Match. When this bit is set to 0, the minutes value is used in the alarm match. Setting this bit to 1
causes the match circuit to ignore the minutes value.
0x3FFF2
Alarm - Seconds
D7
D6
M
D5
D4
D3
10s Alarm Seconds
D2
D1
D0
Alarm Seconds
Contains the alarm value for the seconds and the mask bit to select or deselect the seconds’ value.
M
0x7FFF1
Match. When this bit is set to 0, the seconds value is used in the alarm match. Setting this bit to
1 causes the match circuit to ignore the seconds value.
0x3FFF1
Time Keeping - Centuries
D7
D6
D5
D4
D3
D2
10s Centuries
D1
D0
Centuries
Contains the BCD value of centuries. Lower nibble contains the lower digit and operates from 0
to 9; upper nibble contains the upper digit and operates from 0 to 9. The range for the register is
0-99 centuries.
0x7FFF0
0x3FFF0
Flags
D7
D6
D5
D4
D3
D2
D1
D0
WDF
AF
PF
OSCF
0
CAL
W
R
WDF
Watchdog Timer Flag. This read only bit is set to 1 when the watchdog timer is allowed to reach
0 without being reset by the user. It is cleared to 0 when the Flags register is read or on power-up.
AF
Alarm Flag. This read only bit is set to 1 when the time and date match the values stored in the
alarm registers with the match bits = 0. It is cleared when the Flags register is read or on power-up.
PF
Power Fail Flag. This read only bit is set to 1 when power falls below the power fail threshold
VSWITCH. It is cleared to 0 when the Flags register is read or on power-up.
OSCF
Oscillator Fail Flag. Set to 1 on power up if the oscillator is enabled and not running in the first 5
ms of operation. This indicates that RTC backup power failed and clock value is no longer valid.
The user must reset this bit to 0 to clear this condition (Flag). The chip does not clear this flag.
This bit survives power cycles.
CAL
Calibration Mode. When set to 1, a 512 Hz square wave is output on the INT pin. When set to 0,
the INT pin resumes normal operation. This bit defaults to 0 (disabled) on power up.
W
Write Enable: Setting the W bit to 1 freezes updates to the RTC registers and enables writes to
RTC registers, Alarm registers, Calibration register, Interrupt register and OSCF bit of Flags
register. Setting the W bit to 0 causes the contents of the RTC registers to be transferred to the
clock counters if the time has been changed (a new base time is loaded). This bit defaults to 0 on
power up.
R
Read Enable: Setting R bit to 1, stops clock updates to user RTC registers so that clock updates
are not seen during the reading process. Set R bit to 0 to resume clock updates to the holding
register. This bit defaults to 0 on power up.
Document #: 001-07103 Rev. *J
Page 13 of 31
[+] Feedback
PRELIMINARY
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
CY14B104KA, CY14B104MA
Transient Voltage (<20 ns) on
Any Pin to Ground Potential .................. –2.0V to VCC + 2.0V
Package Power Dissipation
Capability (TA = 25°C) ................................................... 1.0W
Maximum Accumulated Storage Time
Surface Mount Pb Soldering
Temperature (3 Seconds) .......................................... +260°C
............At 150°C Ambient Temperature........................1000h
DC Output Current (1 output at a time, 1s duration).....15 mA
............At 85°C Ambient Temperature..................... 20 Years
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Ambient Temperature with
Power Applied ............................................ –55°C to +150°C
Supply Voltage on VCC Relative to GND ..........–0.5V to 4.1V
Voltage Applied to Outputs
in High-Z State....................................... –0.5V to VCC + 0.5V
Input Voltage...........................................–0.5V to Vcc + 0.5V
Latch Up Current ................................................... > 200 mA
Operating Range
Range
Ambient Temperature
VCC
0°C to +70°C
2.7V to 3.6V
–40°C to +85°C
2.7V to 3.6V
Commercial
Industrial
DC Electrical Characteristics
Over the Operating Range (VCC = 2.7V to 3.6V)
Parameter
Description
ICC1
Average Vcc Current
ICC2
ICC3[12]
ICC4
ISB
IIX[13]
IOZ
VIH
VIL
VOH
VOL
VCAP[14]
Average VCC Current
during STORE
Average VCC Current
at tRC = 200 ns, 3V,
25°C typical
Average VCAP Current
during AutoStore
Cycle
VCC Standby Current
Test Conditions
tRC = 20 ns
Commercial
tRC = 25 ns
tRC = 45 ns
Values obtained without output loads (IOUT = 0 mA) Industrial
All Inputs Don’t Care, VCC = Max.
Average current for duration tSTORE
All I/P cycling at CMOS levels.
Values obtained without output loads (IOUT = 0 mA).
All Inputs Don’t Care, VCC = Max.
Average current for duration tSTORE
Min
Max
65
65
50
70
70
52
10
Unit
mA
mA
35
mA
5
mA
5
CE > (VCC – 0.2). All others VIN < 0.2V or > (VCC – 0.2V). Standby
current level after nonvolatile cycle is complete.
Inputs are static. f = 0 MHz.
Input Leakage Current VCC = Max, VSS < VIN < VCC
–1
+1
(except HSB)
Input Leakage Current VCC = Max, VSS < VIN < VCC
–100
+1
(for HSB)
Off State Output
VCC = Max, VSS < VOUT < VCC, CE or OE > VIH or BHE/BLE > VIH
–1
+1
Leakage Current
or WE < VIL
Input HIGH Voltage
2.0
VCC + 0.5
Input LOW Voltage
VSS – 0.5
0.8
Output HIGH Voltage IOUT = –2 mA
2.4
Output LOW Voltage IOUT = 4 mA
0.4
Storage Capacitor
Between VCAP pin and VSS, 5V Rated
61
180
mA
mA
mA
mA
μA
μA
μA
V
V
V
V
μF
Notes
12. Typical conditions for the active current shown on the DC Electrical characteristics are average values at 25°C (room temperature), and VCC = 3V. Not 100% tested.
13. The HSB pin has IOUT = -2 uA for VOH of 2.4V when both active HIGH and LOW drivers are disabled. When they are enabled standard VOH and VOL are valid. This
parameter is characterized but not tested.
14. VCAP (Storage capacitor) nominal value is 68uF.
Document #: 001-07103 Rev. *J
Page 14 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
Data Retention and Endurance
Parameter
Description
Min
Unit
DATAR
Data Retention
20
Years
NVC
Nonvolatile STORE Operations
200
K
Capacitance
In the following table, the capacitance parameters are listed. [15]
Parameter
Description
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = 0 to 3.0V
Max
Unit
7
pF
7
pF
Thermal Resistance
In the following table, the thermal resistance parameters are listed.[15]
Parameter
Description
ΘJA
Thermal Resistance
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
Test Conditions
44 TSOP II
54 TSOP II
Unit
Test conditions follow standard
test methods and procedures
for measuring thermal
impedance, in accordance with
EIA/JESD51.
31.11
30.73
°C/W
5.56
6.08
°C/W
Figure 6. AC Test Loads
577Ω
577Ω
3.0V
3.0V
R1
R1
OUTPUT
OUTPUT
30 pF
R2
789Ω
5 pF
R2
789Ω
AC Test Conditions
Input Pulse Levels ....................................................0V to 3V
Input Rise and Fall Times (10% - 90%) ........................ <3 ns
Input and Output Timing Reference Levels .................... 1.5V
Note
15. These parameters are guaranteed but not tested.
Document #: 001-07103 Rev. *J
Page 15 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
Table 5. RTC Characteristics
Parameters
IBAK[16]
Description
Test Conditions
RTC Backup Current
Min
Max
Units
Commercial
300
nA
Industrial
350
nA
VRTCbat[17]
VRTCcap[18]
RTC Battery Pin Voltage
1.8
3.3
V
RTC Capacitor Pin Voltage
1.5
3.6
V
tOCS
RTC Oscillator Time to
Start
At Minimum Temperature from Power up or Enable
2
sec
At 25°C Temperature from Power up or Enable
1
sec
Notes
16. From either VRTCcap or VRTCbat.
17. Typical = 3.0V during normal operation.
18. Typical = 2.4V during normal operation.
Document #: 001-07103 Rev. *J
Page 16 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
AC Switching Characteristics
Parameters
Cypress
Alt
Parameters
Parameters
SRAM Read Cycle
tACE
tACS
[19]
tRC
tRC
tAA
tAA [20]
tDOE
tOE
[20]
tOH
tOHA
tLZCE [21]
tLZ
tHZCE [21]
tHZ
[21]
tLZOE
tOLZ
tHZOE [21]
tOHZ
tPU [15]
tPA
[15]
tPD
tPS
tDBE
tLZBE
tHZBE
SRAM Write Cycle
tWC
tWC
tWP
tPWE
tSCE
tCW
tSD
tDW
tHD
tDH
tAW
tAW
tSA
tAS
tHA
tWR
[21,22]
tHZWE
tWZ
tLZWE [21]
tOW
tBW
-
20 ns
Description
Min
Chip Enable Access Time
Read Cycle Time
Address Access Time
Output Enable to Data Valid
Output Hold After Address Change
Chip Enable to Output Active
Chip Disable to Output Inactive
Output Enable to Output Active
Output Disable to Output Inactive
Chip Enable to Power Active
Chip Disable to Power Standby
Byte Enable to Data Valid
Byte Enable to Output Active
Byte Disable to Output Inactive
25 ns
Max
Min
20
20
25
3
3
20
10
0
15
0
25
12
0
8
20
15
15
8
0
15
0
0
15
10
0
0
45
20
3
3
0
0
45
10
8
45
20
0
10
25
20
20
10
0
20
0
0
8
Max
45
3
3
0
Min
25
12
8
3
15
Max
25
20
10
Write Cycle Time
Write Pulse Width
Chip Enable To End of Write
Data Setup to End of Write
Data Hold After End of Write
Address Setup to End of Write
Address Setup to Start of Write
Address Hold After End of Write
Write Enable to Output Disable
Output Active after End of Write
Byte Enable to End of Write
45 ns
15
45
30
30
15
0
30
0
0
10
3
20
15
3
30
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Switching Waveforms
Figure 7. SRAM Read Cycle 1: Address Controlled[19, 20, 23]
W5&
$GGUHVV
$GGUHVV9DOLG
W$$
'DWD2XWSXW
3UHYLRXV'DWD9DOLG
2XWSXW'DWD9DOLG
W2+$
Notes
19. WE must be HIGH during SRAM read cycles.
20. Device is continuously selected with CE, OE and BHE / BLE LOW.
21. Measured ±200 mV from steady state output voltage.
22. If WE is LOW when CE goes LOW, the outputs remain in the high impedance state.
23. HSB must remain HIGH during READ and WRITE cycles.
Document #: 001-07103 Rev. *J
Page 17 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
Switching Waveforms
Figure 8. SRAM Read Cycle 2: CE Controlled[3, 19, 23]
$GGUHVV
$GGUHVV9DOLG
W5&
W+=&(
W$&(
&(
W$$
W/=&(
W+=2(
W'2(
2(
W+=%(
W/=2(
W'%(
%+(%/(
W/=%(
'DWD2XWSXW
+LJK,PSHGDQFH
2XWSXW'DWD9DOLG
W38
,&&
W3'
$FWLYH
6WDQGE\
Figure 9. SRAM Write Cycle 1: WE Controlled[3, 22, 23, 24]
W:&
$GGUHVV
$GGUHVV9DOLG
W6&(
W+$
&(
W%:
%+(%/(
W$:
W3:(
:(
W6$
W6'
'DWD,QSXW
,QSXW'DWD9DOLG
W+=:(
'DWD2XWSXW
W+'
3UHYLRXV'DWD
W/=:(
+LJK,PSHGDQFH
Notes
24. CE or WE must be >VIH during address transitions.
Document #: 001-07103 Rev. *J
Page 18 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
Switching Waveforms
Figure 10. SRAM Write Cycle 2: CE Controlled[3, 22, 23, 24]
W:&
$GGUHVV
$GGUHVV9DOLG
W6&(
&(
W6$
W+$
W%:
%+(%/(
W$:
W3:(
:(
W6'
'DWD,QSXW
W+'
,QSXW'DWD9DOLG
+LJK,PSHGDQFH
'DWD2XWSXW
Figure 11. SRAM Write Cycle 3: BHE and BLE Controlled[6, 22, 23, 24]
W:&
$GGUHVV
$GGUHVV9DOLG
W6&(
&(
W6$
W+$
W%:
%+(%/(
W$:
W3:(
:(
W6'
'DWD,QSXW
W+'
,QSXW'DWD9DOLG
+LJK,PSHGDQFH
'DWD2XWSXW
Document #: 001-07103 Rev. *J
Page 19 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
AutoStore/Power Up RECALL
20 ns
Parameters
Description
tHRECALL [25]
tSTORE [26]
tDELAY [27]
VSWITCH
tVCCRISE
VHDIS[15]
tLZHSB
tHHHD
Power Up RECALL Duration
STORE Cycle Duration
Time Allowed to Complete SRAM Cycle
Low Voltage Trigger Level
VCC Rise Time
HSB Output Driver Disable Voltage
HSB To Output Active Time
HSB High Active Time
Min
25 ns
Max
20
8
20
2.65
150
Min
45 ns
Max
20
8
25
2.65
150
Min
Max
20
8
25
2.65
150
1.9
5
500
1.9
5
500
1.9
5
500
Unit
ms
ms
ns
V
μs
V
μs
ns
Switching Waveforms
Figure 12. AutoStore or Power Up RECALL[28]
96:,7&+
9+',6
99&&5,6(
1RWH
W6725(
W+++'
1RWH
1RWH
W+++'
+6%287
W6725(
W'(/$<
W/=+6%
$XWRVWRUH
W/=+6%
W'(/$<
32:(5
83
5(&$//
W+5(&$//
W+5(&$//
5HDG :ULWH
,QKLELWHG
5:,
32:(583
5(&$//
5HDG :ULWH
%52:1
287
$XWRVWRUH
32:(583
5(&$//
5HDG :ULWH
32:(5
'2:1
$XWRVWRUH
Notes
25. tHRECALL starts from the time VCC rises above VSWITCH.
26. If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware Store takes place.
27. On a Hardware STORE, Software Store / Recall, AutoStore Enable / Disable and AutoStore initiation, SRAM operation continues to be enabled for time tDELAY.
28. Read and Write cycles are ignored during STORE, RECALL, and while VCC is below VSWITCH.
29. HSB pin is driven HIGH to VCC only by internal 100kOhm resistor, HSB driver is disabled.
Document #: 001-07103 Rev. *J
Page 20 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
Software Controlled STORE and RECALL Cycle
In the following table, the software controlled STORE and RECALL cycle parameters are listed. [30, 31]
Parameters
Description
STORE/RECALL Initiation Cycle Time
Address Setup Time
Clock Pulse Width
Address Hold Time
RECALL Duration
tRC
tSA
tCW
tHA
tRECALL
20 ns
Min
Max
20
0
15
0
200
25 ns
Min
Max
25
0
20
0
200
45 ns
Min
Max
45
0
30
0
200
Unit
ns
ns
ns
ns
μs
Switching Waveforms
Figure 13. CE and OE Controlled Software STORE and RECALL Cycle[31]
W5&
$GGUHVV
W5&
$GGUHVV
W6$
$GGUHVV
W&:
W&:
&(
W+$
W6$
W+$
W+$
W+$
2(
W+++'
+6% 6725(RQO\
W+=&(
W/=&(
W'(/$<
W/=+6%
+LJK,PSHGDQFH
W6725(W5(&$//
'4 '$7$
5:,
Figure 14. Autostore Enable and Disable Cycle
$GGUHVV
W5&
W5&
$GGUHVV
$GGUHVV
W6$
&(
W&:
W&:
W+$
W6$
W+$
W+$
W+$
2(
W/=&(
W+=&(
W66
W'(/$<
'4 '$7$
5:,
Notes
30. The software sequence is clocked with CE controlled or OE controlled reads.
31. The six consecutive addresses must be read in the order listed in Table 1. WE must be HIGH during all six consecutive cycles.
Document #: 001-07103 Rev. *J
Page 21 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
Hardware STORE Cycle
Parameters
20 ns
Description
Min
tDHSB
HSB To Output Active Time when write latch not set
tPHSB
Hardware STORE Pulse Width
tSS [32, 33]
Soft Sequence Processing Time
25 ns
Max
Min
45 ns
Max
20
Min
25
15
15
Max
25
ns
100
μs
15
100
100
Unit
ns
Switching Waveforms
Figure 15. Hardware STORE Cycle[26]
:ULWHODWFKVHW
W3+6%
+6% ,1
W6725(
W+++'
W'(/$<
+6% 287
W/=+6%
'4 'DWD2XW
5:,
:ULWHODWFKQRWVHW
W3+6%
+6%SLQLVGULYHQKLJKWR9&&RQO\E\,QWHUQDO
N2KPUHVLVWRU
+6%GULYHULVGLVDEOHG
65$0LVGLVDEOHGDVORQJDV+6% ,1 LVGULYHQORZ
+6% ,1
+6% 287
W'(/$<
W'+6%
W'+6%
5:,
Figure 16. Soft Sequence Processing[32, 33]
6RIW6HTXHQFH
&RPPDQG
$GGUHVV
$GGUHVV
W6$
$GGUHVV
W&:
W66
6RIW6HTXHQFH
&RPPDQG
$GGUHVV
W66
$GGUHVV
W&:
&(
9&&
Notes
32. This is the amount of time it takes to take action on a soft sequence command. Vcc power must remain HIGH to effectively register command.
33. Commands such as STORE and RECALL lock out IO until operation is complete which further increases this time. See the specific command.
Document #: 001-07103 Rev. *J
Page 22 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
Truth Table For SRAM Operations
HSB should remain HIGH for SRAM Operations.
For x8 Configuration
Inputs and Outputs[2]
CE
WE
OE
H
X
X
High Z
Deselect/Power down
Mode
Standby
Power
L
H
L
Data Out (DQ0–DQ7);
Read
Active
L
H
H
High Z
Output Disabled
Active
L
L
X
Data in (DQ0–DQ7);
Write
Active
For x16 Configuration
CE
WE
OE
BHE
BLE
H
X
X
X
X
L
X
X
H
L
H
L
L
L
H
L
L
H
L
L
H
L
H
L
Inputs and Outputs[2]
Mode
Power
High-Z
Deselect/Power down
Standby
H
High-Z
Output Disabled
Active
L
Data Out (DQ0–DQ15)
Read
Active
H
L
Data Out (DQ0–DQ7);
DQ8–DQ15 in High-Z
Read
Active
L
H
Data Out (DQ8–DQ15);
DQ0–DQ7 in High-Z
Read
Active
H
L
L
High-Z
Output Disabled
Active
H
H
L
High-Z
Output Disabled
Active
H
H
L
H
High-Z
Output Disabled
Active
L
L
X
L
L
Data In (DQ0–DQ15)
Write
Active
L
L
X
H
L
Data In (DQ0–DQ7);
DQ8–DQ15 in High-Z
Write
Active
L
L
X
L
H
Data In (DQ8–DQ15);
DQ0–DQ7 in High-Z
Write
Active
Document #: 001-07103 Rev. *J
Page 23 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
Part Numbering Nomenclature
CY14 B 104 K A ZS P 20 X C T
Option:
T - Tape & Reel
Blank - Std.
Temperature:
C - Commercial (0 to 70°C)
I - Industrial (–40 to 85°C)
Pb-Free
P - 54 Pin
Blank - 44 Pin
Package:
ZS - TSOP II
Die revision:
Blank: No Rev
A - 1st Rev
Data Bus:
K - x8 + RTC
M - x16 + RTC
Speed:
20 - 20 ns
25 - 25 ns
45 - 45 ns
Density:
104 - 4 Mb
Voltage:
B - 3.0V
NVSRAM
14 - AutoStore + Software Store + Hardware Store
Cypress
Document #: 001-07103 Rev. *J
Page 24 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
Ordering Information
Speed
(ns)
20
25
45
Ordering Code
Package
Diagram
Package Type
Operating
Range
CY14B104KA-ZS20XCT
51-85087
44-pin TSOPII
Commercial
CY14B104KA-ZS20XIT
51-85087
44-pin TSOPII
Industrial
CY14B104KA-ZS20XI
51-85087
44-pin TSOPII
CY14B104MA-ZS20XCT
51-85087
44-pin TSOPII
Commercial
CY14B104MA-ZS20XIT
51-85087
44-pin TSOPII
Industrial
CY14B104MA-ZS20XI
51-85087
44-pin TSOPII
CY14B104KA-ZSP20XCT
51-85160
54-pin TSOPII
Commercial
CY14B104KA-ZSP20XIT
51-85160
54-pin TSOPII
Industrial
CY14B104KA-ZSP20XI
51-85160
54-pin TSOPII
CY14B104MA-ZSP20XCT
51-85160
54-pin TSOPII
Commercial
CY14B104MA-ZSP20XIT
51-85160
54-pin TSOPII
Industrial
CY14B104MA-ZSP20XI
51-85160
54-pin TSOPII
CY14B104KA-ZS25XCT
51-85087
44-pin TSOPII
Commercial
CY14B104KA-ZS25XIT
51-85087
44-pin TSOPII
Industrial
CY14B104KA-ZS25XI
51-85187
44-pin TSOPII
CY14B104MA-ZS25XCT
51-85087
44-pin TSOPII
Commercial
CY14B104MA-ZS25XIT
51-85087
44-pin TSOPII
Industrial
CY14B104MA-ZS25XI
51-85087
44-pin TSOPII
CY14B104KA-ZSP25XCT
51-85160
54-pin TSOPII
Commercial
CY14B104KA-ZSP25XIT
51-85160
54-pin TSOPII
Industrial
CY14B104KA-ZSP25XI
51-85160
54-pin TSOPII
CY14B104MA-ZSP25XCT
51-85160
54-pin TSOPII
Commercial
CY14B104MA-ZSP25XIT
51-85160
54-pin TSOPII
Industrial
CY14B104MA-ZSP25XI
51-85160
54-pin TSOPII
CY14B104KA-ZS45XCT
51-85087
44-pin TSOPII
Commercial
CY14B104KA-ZS45XIT
51-85087
44-pin TSOPII
Industrial
CY14B104KA-ZS45XI
51-85187
44-pin TSOPII
CY14B104MA-ZS45XCT
51-85087
44-pin TSOPII
Commercial
CY14B104MA-ZS45XIT
51-85087
44-pin TSOPII
Industrial
CY14B104MA-ZS45XI
51-85087
44-pin TSOPII
CY14B104KA-ZSP45XCT
51-85160
54-pin TSOPII
Commercial
CY14B104KA-ZSP45XIT
51-85160
54-pin TSOPII
Industrial
CY14B104KA-ZSP45XI
51-85160
54-pin TSOPII
CY14B104MA-ZSP45XCT
51-85160
54-pin TSOPII
Commercial
CY14B104MA-ZSP45XIT
51-85160
54-pin TSOPII
Industrial
CY14B104MA-ZSP45XI
51-85160
54-pin TSOPII
All parts are Pb-free. The above table contains Preliminary information. Please contact your local Cypress sales representative for availability of these parts.
Document #: 001-07103 Rev. *J
Page 25 of 31
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PRELIMINARY
CY14B104KA, CY14B104MA
Package Diagrams
Figure 17. 44-Pin TSOP II (51-85087)
DIMENSION IN MM (INCH)
MAX
MIN.
PIN 1 I.D.
1
23
10.262 (0.404)
10.058 (0.396)
11.938 (0.470)
11.735 (0.462)
22
EJECTOR PIN
44
TOP VIEW
0.800 BSC
(0.0315)
OR E
K X A
SG
BOTTOM VIEW
0.400(0.016)
0.300 (0.012)
10.262 (0.404)
10.058 (0.396)
BASE PLANE
0.210 (0.0083)
0.120 (0.0047)
0°-5°
0.10 (.004)
0.150 (0.0059)
0.050 (0.0020)
1.194 (0.047)
0.991 (0.039)
18.517 (0.729)
18.313 (0.721)
SEATING
PLANE
0.597 (0.0235)
0.406 (0.0160)
51-85087 *A
Document #: 001-07103 Rev. *J
Page 26 of 31
[+] Feedback
PRELIMINARY
Package Diagrams
CY14B104KA, CY14B104MA
(continued)
Figure 18. 54-Pin TSOP II (51-85160)
51-85160 **
Document #: 001-07103 Rev. *J
Page 27 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
Document History Page
Document Title: CY14B104KA/CY14B104MA 4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock
Document Number: 001-07103
Orig. of
Rev. ECN No. Submission
Description of Change
Date
Change
**
431039
See ECN
TUP
New Data Sheet
*A
489096
See ECN
TUP
Removed 48 SSOP Package
Added 44 TSOPII and 54 TSOPII Packages
Updated Part Numbering Nomenclature and Ordering Information
Added Soft Sequence Processing Time Waveform
Added RTC Characteristics Table
Added RTC Recommended Component Configuration
*B
499597
See ECN
PCI
Removed 35ns speed bin
Added 55ns speed bin. Updated AC table for the same
Changed “Unlimited” read/write to “infinite” read/write
Features section: Changed typical ICC at 200-ns cycle time to 8 mA
Changed STORE cycles from 500K to 200K cycles.
Shaded Commercial grade in operating range table.
Modified Icc/Isb specs.
Changed VCAP value in DC table
Added 44 TSOP II in Thermal Resistance table
Modified part nomenclature table. Changes reflected in the ordering information
table.
*C
517793
See ECN
TUP
Removed 55ns speed bin
Changed pinout for 44TSOPII and 54TSOPII packages
Changed ISB to 1mA
Changed ICC4 to 3mA
Changed VCAP min to 35μF
Changed VIH max to Vcc + 0.5V
Changed tSTORE to 15ns
Changed tPWE to 10ns
Changed tSCE to 15ns
Changed tSD to 5ns
Changed tAW to 10ns
Removed tHLBL
Added Timing Parameters for BHE and BLE - tDBE, tLZBE, tHZBE, tBW
Removed min. specification for Vswitch
Changed tGLAX to 1ns
Added tDELAY max. of 70us
Changed tSS specification from 70us min. to 70us max.
*D
825240
See ECN
UHA
Changed the data sheet from Advance information to Preliminary
Changed tDBE to 10ns in 15ns part
Changed tHZBE in 15ns part to 7ns and in 25ns part to10ns
Changed tBW in 15ns part to 15ns and in 25ns part to 20ns
Changed tGLAX to tGHAX
Changed the value of ICC3 to 25mA
Changed the value of tAW in 15ns part to 15ns
*E
914280
See ECN
UHA
Changed the figure-14 title from 54-Pb to 54 Pin
Included all the information for 45ns part in this data sheet
Document #: 001-07103 Rev. *J
Page 28 of 31
[+] Feedback
PRELIMINARY
CY14B104KA, CY14B104MA
Document Title: CY14B104KA/CY14B104MA 4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock
Document Number: 001-07103
Orig. of
Rev. ECN No. Submission
Description of Change
Date
Change
*F
1890926
See ECN
vsutmp8/AE- Added Footnote 1, 2 and 3.
SA
Updated Logic Block diagram
Updated Pin definition Table
Changed 8Mb Address expansion Pin from Pin 43 to Pin 42 for 44-TSOP II (x8)
package.
Corrected typo in VIL min spec
Changed the value of ICC3 from 25mA to 13mA
Changed ISB value from 1mA to 2mA
Updated ordering information table
Rearranging of Footnotes.
Changed Package diagrams title.
The pins X1 and X2 interchanged in 44TSOP II(x8) and 54TSOP II(x16) pinout
diagram.
*G
2267286
See ECN
GVCH/PYRS Rearranging of “Features”
Added BHE and BLE Information in Pin Definitions Table
Updated Figure 2 (Autostore mode)
Updated footnote 6
RTC Register Map:Register 0x1FFF6:Changed D4 from ABE to 0
Register Map Detail:0x1FFF6:Changed D4 from ABE to 0 and removed ABE
information
Changed ICC2 & ICC4 from 3mA to 6mA
Changed ICC3 from 13mA to 15mA
Changed ISB from 2mA to 3mA
Added input leakage current (IIX) for HSB in DC Electrical Characteristics table
Changed Vcap from 35uF min and 57uF max value to 54uF min and 82uF max
value
Corrected typo in tDBE value from 22ns to 20ns for 45ns part
Corrected typo in tHZBE value from 22ns to 15ns for 45ns part
Corrected typo in tAW value from 15ns to 10ns for 15ns part
Changed Vrtccap max from 2.7V to 3.6V
Changed tRECALL from 100 to 200us
Added footnote 10, 29
Reframed footnote 18, 25
Added footnote 18 to figure 8 (SRAM WRITE Cycle #1)
Added footnote 18, 26 and 27 to figure 9 (SRAM WRITE Cycle #2)
*H
2483627
See ECN
GVCH/PYRS Removed 8 mA typical ICC at 200 ns cycle time in Feature section
Referenced footnote 9 to ICC3 in DC Characteristics table
Changed ICC3 from 15 mA to 35 mA
Changed Vcap minimum value from 54 uF to 61 uF
Changed tAVAV to tRC
Changed VRTCcap minimum value from 1.2V to 1.5V
Figure 12:Changed tSA to tAS and tSCE to tCW
Document #: 001-07103 Rev. *J
Page 29 of 31
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PRELIMINARY
CY14B104KA, CY14B104MA
Document Title: CY14B104KA/CY14B104MA 4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock
Document Number: 001-07103
Orig. of
Rev. ECN No. Submission
Description of Change
Date
Change
*I
2519319
06/20/08
GVCH/PYRS Added 20 ns access speed in “Features”
Added ICC1 for tRC=20 ns for both industrial and Commercial temperature Grade
Updated Thermal resistance values for 44-TSOP II and 54-TSOP II packages
Added AC Switching Characteristics specs for 20 ns access speed
Added Software controlled STORE/RECALL cycle specs for 20 ns access speed
Updated ordering information and Part numbering nomenclature
*J
2600941
11/04/08
GVCH/PYRS Removed 15 ns access speed from “Features”
Changed part number from CY14B104K/CY14B104M to
CY14B104KA/CY14B104MA
Updated Logic block diagram
Updated footnote 1
Added footnote 2
Pin definition: Updated WE, HSB and NC pin description
Page 4: Updated SRAM READ, SRAM WRITE, Autostore operation description
Page 4: Updated Hardware store operation and Hardware RECALL (Power-up)
description
Footnote 1 and 8 referenced for Mode selection Table
Updated footnote 6
Page 6: updated Data protection description
Page 6: Updated Starting and stopping the oscillator description
Page 7: Updated Calibrating the clock description
Page 7: Updated Alarm description
Page 8: Added Flags register
Added footnote 10 and 11
Updated Figure 4: Removed RF register and Changed C2 value from 56pF to
12pF
Updated Register Map Table 3
Updated Register map detail Table 4
Maximum Ratings: Added Max. Accumulated storage time
Changed Output short circuit current parameter name to DC output current
Changed ICC2 from 6mA to 10mA
Changed ICC4 from 6mA to 5mA
Changed ISB from 3mA to 5mA
Updated ICC1, ICC3, ISB and IOZ Test conditions
Changed VCAP voltage max value from 82uF to 180uF
Updated footnote 12 and 13
Added footnote 14
Added Data retention and Endurance Table
Updated Input Rise and Fall time in AC test Conditions
Changed tOCS value for minimum teperature from 10 to 2 sec
updated tOCS value for room temperature from 5 to 1sec
Referenced footnote 20 to tOHA parameter
Updated All switching waveforms
Updated footnote 20
Added Figure 11 (SRAM WRITE CYCLE:BHE and BLE controlled)
Updated tDELAY value
Added VHDIS, tHHHD and tLZHSB parameters
Updated footnote 27
Added footnote 29
Software controlled STORE/RECALL Table: Changed tAS to tSA
Changed tGHAX to tHA
Changed tHA value from 1ns to 1ns
Added tDHSB parameter
Changed tHLHX to tPHSB
Updated tSS from 70us to 100us
Added truth table for SRAM operations
Updated ordering information and part numbering nomenclature
Document #: 001-07103 Rev. *J
Page 30 of 31
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PRELIMINARY
CY14B104KA, CY14B104MA
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at cypress.com/sales.
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psoc.cypress.com/low-power
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psoc.cypress.com/lcd-drive
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psoc.cypress.com/precision-analog
© Cypress Semiconductor Corporation, 2006-2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document #: 001-07103 Rev. *J
Revised November 3, 2008
Page 31 of 31
AutoStore and QuantumTrap are registered trademarks of Simtek Corporation. All products and company names mentioned in this document are the trademarks of their respective holders.
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