LE A REE I DF M ENTATIO LE N MP FDD8796/FDU8796 N-Channel PowerTrench® MOSFET 25V, 35A, 5.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 35A Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 35A Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V Low gate resistance Application Avalanche rated and 100% tested RoHS Compliant Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D G D G S Short Lead I-PAK I-PAK G D S (TO-251AA) S MOSFET Maximum Ratings TC= 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter Ratings 25 Units V VGS Gate to Source Voltage ±20 V Drain Current 35 ID -Continuous (Package Limited) -Continuous (Die Limited) 98 -Pulsed (Note 1) EAS Single Pulse Avalanche Energy PD Power Dissipation TJ, TSTG Operating and Storage Temperature A 305 (Note 2) 91 mJ 88 W -55 to 175 °C °C/W Thermal Characteristics RθJC Thermal Resistance, Junction to Case TO_252, TO_251 1.7 RθJA Thermal Resistance, Junction to Ambient TO_252, TO_251 100 °C/W RθJA Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W Package Marking and Ordering Information Device Marking FDD8796 Device FDD8796 Package TO-252AA Reel Size 13’’ Tape Width 12mm Quantity 2500 units FDU8796 FDU8796 TO-251AA N/A (Tube) N/A 75 units FDU8796 FDU8796_F071 TO-251AA N/A (Tube) N/A 75 units ©2006 Fairchild Semiconductor Corporation FDD8796/FDU8796 Rev. B 1 www.fairchildsemi.com FDD8796/FDU8796 N-Channel PowerTrench® MOSFET March 2006 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 20V VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V 25 V mV/°C 7 1 TJ = 150°C 250 µA ±100 nA 2.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -6.7 VGS = 10V, ID = 35A 4.5 5.7 VGS = 4.5V, ID = 35A 6.0 8.0 VDS = 10V, ID = 35A TJ = 175°C 6.9 9.5 1960 2610 pF 455 605 pF 315 475 pF rDS(on) Drain to Source On Resistance 1.2 1.8 mV/°C mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 13V, VGS = 0V, f = 1MHz f = 1MHz Ω 1.1 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain Charge VDD =13V, ID = 35A VGS = 10V, RGS = 20Ω VGS = 0 to10V VGS = 0 to 5V VDD =13V, ID = 35A, Ig = 1.0mA 10 20 ns 24 39 ns 99 158 ns 57 91 ns 37 52 nC 19 27 nC 6 nC 6 nC Drain-Source Diode Characteristics VGS = 0V, IS = 35A 0.9 1.25 VGS = 0V, IS = 15A 0.8 1.0 V Reverse Recovery Time IF = 35A, di/dt = 100A/µs 30 45 ns Reverse Recovery Charge IF = 35A, di/dt = 100A/µs 23 35 nC VSD Source to Drain Diode Voltage trr Qrr Notes: 1: Pulse time < 300µs, Duty cycle = 2%. 2: Starting TJ = 25°C, L = 0.3mH, IAS = 24.7A, VDD = 23V, VGS = 10V. FDD8796/FDU8796 Rev. B 2 V www.fairchildsemi.com FDD8796/FDU8796 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted ID, DRAIN CURRENT (A) 60 VGS = 10V 50 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 4.5V 40 VGS = 3.5V 30 20 VGS = 3V 10 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 70 ID = 35A VGS = 10V 1.4 1.2 1.0 0.8 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) VGS = 3.5V 2.0 VGS = 4.5V 1.5 1.0 0.5 VGS = 10V 0 10 20 30 40 50 ID, DRAIN CURRENT(A) 60 70 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX ID =35A 12 10 TJ = 175oC 8 6 4 TJ = 25oC 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 70 ID, DRAIN CURRENT (A) 2.5 2 200 Figure 3. Normalized On Resistance vs Junction Temperature PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 60 50 TJ = 175oC 40 30 TJ = 25oC 20 TJ = -55oC 10 0 3.0 14 1.8 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 3V 3.5 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics 4.0 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 10 TJ = 175oC TJ = -55oC 1 TJ = 25oC 0.1 0.01 1E-3 0.0 0.3 0.6 0.9 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics FDD8796/FDU8796 Rev. B VGS = 0V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD8796/FDU8796 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 4000 Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 10V 6 VDD = 13V 4 VDD = 16V 2 Coss Crss f = 1MHz VGS = 0V 0 0 10 20 30 Qg, GATE CHARGE(nC) 100 0.1 40 Figure 7. Gate Charge Characteristics 100 10 ID, DRAIN CURRENT (A) TJ = 25oC TJ = 125oC TJ = 150oC 80 VGS = 10V 60 VGS = 4.5V 40 20 o RθJC = 1.7 C/W 1 0.01 0.1 1 10 0 25 100 300 tAV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability P(PK), PEAK TRANSIENT POWER (W) 10000 10us 100 100us 10 LIMITED BY PACKAGE 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 1 1ms SINGLE PULSE TJ = MAX RATED 10ms DC TC = 25oC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 Figure 11. Forward Bias Safe Operating Area FDD8796/FDU8796 Rev. B 175 Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 ID, DRAIN CURRENT (A) 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 50 IAS, AVALANCHE CURRENT(A) 1000 TC = 25oC VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 100 50 -5 10 I = I25 175 – TC ----------------------150 SINGLE PULSE -4 10 -3 -2 -1 10 10 10 t, PULSE WIDTH (s) 0 10 1 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD8796/FDU8796 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE-DESENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 10 -3 -2 10 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION(s) Figure 13. Transient Thermal Response Curve FDD8796/FDU8796 Rev. B 5 www.fairchildsemi.com FDD8796/FDU8796 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 FDD8796/FDU8796 Rev. B 6 www.fairchildsemi.com FDD8796/FDU8796 N-Channel PowerTrench® MOSFET TRADEMARKS