Vishay IRFP31N50L Power mosfet Datasheet

IRFP31N50L, SiHFP31N50L
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Super Fast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
500
RDS(on) ()
VGS = 10 V
0.15
Available
RoHS*
Qg (Max.) (nC)
210
Qgs (nC)
58
• Lower Gate Charge Results in Simpler Drive
Requirements
100
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
Qgd (nC)
Configuration
Single
COMPLIANT
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
D
• Compliant to RoHS Directive 2002/95/EC
TO-247AC
APPLICATIONS
G
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
S
D
• Uninterruptible Power Supplies
S
G
• Motor Control Applications
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247AC
IRFP31N50LPbF
SiHFP31N50L-E3
IRFP31N50L
SiHFP31N50L
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
UNIT
V
31
20
A
IDM
124
3.7
W/°C
Single Pulse Avalanche Energyb
EAS
460
mJ
Repetitive Avalanche Currenta
IAR
31
A
Repetitive Avalanche Energya
EAR
46
mJ
Linear Derating Factor
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
PD
460
W
dV/dt
19
V/ns
TJ, Tstg
- 55 to + 150
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1 mH, Rg = 25 , IAS = 31 A (see fig. 12).
c. ISD  31 A, dI/dt  422 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91220
S11-0488-Rev. C, 21-Mar-11
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1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP31N50L, SiHFP31N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
TYP.
MAX.
UNIT
RthJA
RthCS
RthJC
0.24
-
40
0.26
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
500
-
-
V
V/°C
Static
Drain-Source Breakdown Voltage
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.28
-
VGS(th)
VDS = VGS, ID = 250 μA
3.0
-
5.0
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
-
-
μA
IDSS
VDS = 500 V, VGS = 0 V
50
Zero Gate Voltage Drain Current
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
-
-
2.0
mA
-
0.15
0.18

VDS = 50 V, ID = 19 Ab
15
-
-
S
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
5000
-
-
553
-
VDS = 400 V, VGS = 0 V, TJ = 125 °C
ID = 19 Ab
VGS = 10 V
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Effective Output Capacitance
Coss eff.
Effective Output Capacitance
Coss eff. (ER)
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Internal Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS = 0 V
-
59
VDS = 1.0 V , f = 1.0 MHz
-
6630
-
VDS = 400 V , f = 1.0 MHz
-
155
-
VDS = 0 V to 400 Vc
VGS = 10 V
ID = 31 A, VDS = 400 V,
see fig. 7 and 13b
f = 1 MHz, open drain
-
276
-
-
200
-
-
-
210
-
-
58
-
-
100
-
1.1
-
td(on)
-
28
-
tr
-
115
-
-
54
-
-
53
-
-
-
31
-
-
124
td(off)
VDD = 250 V, ID = 31 A,
Rg = 4.3 , see fig. 10b
tf
pF
nC

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Current
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 31 A, VGS = 0 Vb
-
-
1.5
TJ = 25 °C, IF = 31 A
-
170
250
TJ = 125 °C, dI/dt = 100 A/μsb
-
220
330
TJ = 25 °C, IS = 31 A, VGS = 0 Vb
-
570
860
nC
TJ = 125 °C, dI/dt = 100 A/μsb
-
1.2
1.8
TJ = 25 °C
-
7.9
12
μC
A
V
ns
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Forward Turn-On Time
ton
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
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Document Number: 91220
S11-0488-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP31N50L, SiHFP31N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
ID, Drain-to-Source Current (A)
Top
100
Bottom
1000
VGS
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
ID, Drain-to-Source Current (A)
100
10
1
5.0 V
100
TJ = 150 °C
10
TJ = 25 °C
1
0.1
0.01
0.1
1
20 μs PULSE WIDTH
TJ = 25 °C
100
10
4
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Top
10
Bottom
VGS
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
5.0 V
1
0.1
20 μs PULSE WIDTH
TJ = 150 °C
0.01
0.1
10
1
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Document Number: 91220
S11-0488-Rev. C, 21-Mar-11
5
6
8
9
7
VGS, Gate-to-Source Voltage (V)
10
11
Fig. 3 - Typical Transfer Characteristics
100
RDS(on), Drain-to-Source On Resistance (Normalized)
Fig. 1 - Typical Output Characteristics
100
VDS = 50 V
20 μs PULSE WIDTH
0.1
3.0
ID = 31 A
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
VGS = 10 V
20 40
60 80 100 120 140 160
TJ, Junction Temperature
Fig. 4 - Normalized On-Resistance vs. Temperature
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP31N50L, SiHFP31N50L
Vishay Siliconix
20
1 000 000
C, Capacitance (pF)
100 000
ID = 31 A
f = 1 MHz
SHORTED
VGS, Gate-to-Source Voltage (V)
VGS = 0 V,
Ciss = Cgs + Cgd, Cds
Crss = Cgd
Coss = Cds + Cgd
10 000
Ciss
1000
Coss
100
VDS = 400 V
VDS = 250 V
VDS = 100 V
12
8
4
Crss
10
0
1
1000
100
10
0
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
120
40
80
QG, Total Gate Charge (nC)
160
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
30
ISD, Reverse Drain Current (A)
25
Energy (µs)
20
15
10
100
TJ = 150 °C
10
TJ = 25 °C
1
5
0
0
100
200
300
400
500
600
VDS, Drain-to-Source Voltage (V)
Fig. 6 - Output Capacitance Stored Energy vs. VDS
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0.1
0.2
VGS = 0 V
1.4
1.0
0.6
VSD, Source-to-Drain Voltage (V)
1.8
Fig. 8 - Typical Source Drain Diode Forward Voltage
Document Number: 91220
S11-0488-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP31N50L, SiHFP31N50L
Vishay Siliconix
RD
VDS
35
VGS
ID, Drain Current (A)
D.U.T.
RG
30
25
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
20
Fig. 10a - Switching Time Test Circuit
15
VDS
10
90 %
5
0
25
50
75
125
100
10 %
VGS
150
TC, Case Temperature (°C)
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
1
D = 0.50
0.1
0.20
0.10
0.05
PDM
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak TJ = PDM x ZthJC + TC
0.001
0.00001
0.001
0.0001
0.01
0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
L
VDS
D.U.T
RG
IAS
20 V
tp
tp
Driver
+
A
- VDD
A
IAS
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91220
S11-0488-Rev. C, 21-Mar-11
Fig. 12b - Unclamped Inductive Waveforms
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP31N50L, SiHFP31N50L
Vishay Siliconix
ID, Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
100us
10
1
1ms
TC = 25 °C
TJ = 150 °C
Single Pulse
10ms
100
10
1000
EAS, Single Pulse Avalanche Energy (mJ)
1000
1000
ID
14A
20A
BOTTOM 30A
TOP
800
600
400
200
0
25
50
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
75
100
125
150
Starting TJ, Junction Temperature(°C)
VDS, Drain-to-Source Voltage (V)
Fig. 12d - Gate Charge Test Circuit
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Maximum Safe Operating Area
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Fig. 13b - Basic Gate Charge Waveform
Document Number: 91220
S11-0488-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP31N50L, SiHFP31N50L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91220.
Document Number: 91220
S11-0488-Rev. C, 21-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-247AC (High Voltage)
A
A
4
E
B
3 R/2
E/2
7 ØP
Ø k M DBM
A2
S
(Datum B)
ØP1
A
D2
Q
4
4
2xR
(2)
D1
D
1
2
4
D
3
Thermal pad
5 L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
4
E1
0.01 M D B M
View A - A
C
2x e
A1
b4
Planting
Lead Assignments
1. Gate
2. Drain
3. Source
4. Drain
D DE
(b1, b3, b5)
Base metal
E
C
(c)
C
c1
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
DIM.
MIN.
MAX.
A
4.58
5.31
A1
2.21
2.59
A2
1.17
2.49
b
0.99
1.40
b1
0.99
1.35
b2
1.53
2.39
b3
1.65
2.37
b4
2.42
3.43
b5
2.59
3.38
c
0.38
0.86
c1
0.38
0.76
D
19.71
20.82
D1
13.08
ECN: X13-0103-Rev. D, 01-Jul-13
DWG: 5971
INCHES
MIN.
MAX.
0.180
0.209
0.087
0.102
0.046
0.098
0.039
0.055
0.039
0.053
0.060
0.094
0.065
0.093
0.095
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.820
0.515
-
DIM.
D2
E
E1
e
Øk
L
L1
N
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
0.254
14.20
16.25
3.71
4.29
7.62 BSC
3.51
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.640
0.146
0.169
0.300 BSC
0.138
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
8. Xian and Mingxin actually photo.
Revision: 01-Jul-13
Document Number: 91360
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer

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Revision: 08-Feb-17
1
Document Number: 91000
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