MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC • • • = 2.0 Adc Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication Choice of Packages − MJE700 and MJE800 Series Pb−Free Packages are Available* 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ Rating Symbol Collector−Emitter Voltage MJE700, MJE800 MJE702, MJE703, MJE802, MJE803 VCEO Collector−Base Voltage MJE700, MJE800 MJE702, MJE703, MJE802, MJE803 VCB Emitter−Base Voltage VEB 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 0.1 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 40 0.32 W mW/_C TJ, Tstg –55 to +150 _C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 6.25 _C/W Operating and Storage Junction Temperature Range Value Unit TO−225 CASE 77 STYLE 1 Vdc 60 80 Vdc 3 2 1 60 80 MARKING DIAGRAM YWW JEx0yG THERMAL CHARACTERISTICS Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Y = Year WW = Work Week JEx0y = Device Code x = 7 or 8 y = 0, 2, or 3 G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 8 1 Publication Order Number: MJE700/D MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Breakdown Voltage (Note 1) MJE700, MJE800 (IC = 50 mAdc, IB = 0) MJE702, MJE703, MJE802, MJE803 V(BR)CEO 60 80 − − Vdc − − 100 100 − − 100 500 − 2.0 750 750 100 − − − − − − 2.5 2.8 3.0 − − − 2.5 2.5 3.0 1.0 − OFF CHARACTERISTICS Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) mAdc ICEO MJE700, MJE800 MJE702, MJE703, MJE802, MJE803 Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO, IE = 0, TC = 100_C) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) hFE − MJE700, MJE702, MJE800, MJE802 MJE703, MJE803 All devices Collector−Emitter Saturation Voltage (Note 1) (IC = 1.5 Adc, IB = 30 mAdc) MJE700, MJE702, MJE800, MJE802 (IC = 2.0 Adc, IB = 40 mAdc) MJE703, MJE803 (IC = 4.0 Adc, IB = 40 mAdc) All devices VCE(sat) Base−Emitter On Voltage (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) VBE(on) Vdc Vdc MJE700, MJE702, MJE800, MJE802 MJE703, MJE803 All devices DYNAMIC CHARACTERISTICS Small−Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) hfe 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. PD, POWER DISSIPATION (WATTS) 50 40 TO−220AB 30 TO−126 20 10 0 25 50 75 100 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 125 150 − MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN) 4.0 VCC −30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA RC VCC = 30 V IC/IB = 250 ts IB1 = IB2 TJ = 25°C 2.0 SCOPE t, TIME (s) μ TUT V2 APPROX +8.0 V RB 51 0 V1 APPROX −12 V ≈ 6.0 k D1 ≈ 150 For td and tr, D1 id disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. tr, tf ≤ 10 ns DUTY CYCLE = 1.0% tr 0.6 0.4 + 4.0 V 25 ms tf 1.0 0.8 td @ VBE(off) = 0 0.2 0.04 0.06 For NPN test circuit, reverse diode, polarities and input pulses. r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Times Test Circuit 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.03 PNP NPN 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 3. Switching Times P(pk) qJC(t) = r(t) qJC qJC = 3.12°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) 0.1 0.05 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response (MJE700, 800 Series) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 5.0 5.0ms 1.0ms 100ms IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) ACTIVE−REGION SAFE−OPERATING AREA 10 7.0 5.0 dc TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED MJE702, 703 MJE700 7.0 10 20 30 50 70 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 5.0 100 Figure 5. MJE700 Series 5.0ms 1.0ms 100ms dc TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED MJE802, 803 MJE800 7.0 10 20 30 50 70 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 100 Figure 6. MJE800 Series There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 are based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. http://onsemi.com 3 MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN) PNP MJE700 Series NPN MJE800 Series 6.0 k 6.0 k TJ = 125°C 4.0 k 3.0 k 25°C 2.0 k −55 °C 1.0 k 800 600 400 300 0.04 0.06 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 VCE = 3.0 V TJ = 125°C 4.0 k hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 3.0 V 3.0 k 2.0 k 25°C −55 °C 1.0 k 800 600 400 300 0.04 0.06 4.0 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 3.4 TJ = 25°C 3.0 2.6 IC = 0.5 A 1.0 A 2.0 A 4.0 A 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 3.4 3.0 TJ = 25°C IC = 0.5 A 1.0 A 2.0 A 4.0 A 2.6 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 IB, BASE CURRENT (mA) 1.0 2.0 5.0 10 20 50 100 IB, BASE CURRENT (mA) Figure 8. Collector Saturation Region 2.2 2.2 TJ = 25°C TJ = 25°C 1.4 1.8 VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.8 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.1 0.2 0.4 0.6 1.0 2.0 0.2 0.04 0.06 4.0 IC, COLLECTOR CURRENT (AMP) 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) Figure 9. “On” Voltages http://onsemi.com 4 2.0 4.0 MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN) ORDERING INFORMATION Device MJE700 MJE700G MJE702 MJE702G MJE703 MJE703G Package Shipping TO−225 TO−225 (Pb−Free) TO−225 TO−225 (Pb−Free) TO−225 TO−225 (Pb−Free) 50 Units / Bulk MJE800 MJE800G MJE802 MJE802G MJE803 MJE803G TO−225 TO−225 (Pb−Free) TO−225 TO−225 (Pb−Free) TO−225 TO−225 (Pb−Free) http://onsemi.com 5 MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN) PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. C Q M −A− 1 2 3 H K J V G R 0.25 (0.010) S M A M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 −−− MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 −−− STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 6 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MJE700/D