CHA2098b RoHS COMPLIANT 20-40GHz High Gain Buffer Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2098b is a high gain broadband threestage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. Vd2,3 OUT IN The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Vg1 Vg2 Vg3 Typical on-wafer results It is available in chip form. Gain & RLoss ( dB ) 25 Main Features ■ Broadband performances: 20-40GHz ■ 16dBm output power (1dB gain comp) ■ 19dB ±1.5dB gain ■ Low DC power consumption, 150mA @ 3.5V ■ Chip size: 1.67 X 0.97 X 0.10mm 15 Gain 5 -5 OUT -15 IN -25 10 15 20 25 30 35 40 45 Frequency ( GHz ) Main Characteristics Tamb. = 25°C Symbol Fop G P1dB Id Parameter Min Typ Max Unit 40 GHz Operating frequency range 20 Small signal gain 17 19 dB Output power at 1dB gain compression 13 16 dBm Bias current 150 200 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA20981233-21 Aug 01 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-40GHz High Gain Buffer Amplifier CHA2098b Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd1,2,3 = 3.5V Symbol Fop G ∆G Parameter Min Operating frequency range (1) 20 Small signal gain (1) 17 Small signal gain flatness (1) Is Reverse isolation (1) Typ Max Unit 40 GHz 19 dB ±1.5 dB 30 dB P1db Output power at 1dB gain compression (1) 13 16 dBm P03 Output power at 3dB gain compression 15 16 dBm VSWRin Input VSWR (1) 3.0:1 VSWRout Output VSWR (1) NF Noise figure Id Bias current 3.0:1 150 10.0 dB 200 mA (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 4.0 V Id Drain bias current 200 mA Vg Gate bias voltage -2.0 to +0.4 V Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +155 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. Ref. : DSCHA20981233-21 Aug 01 2/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 20-40GHz High Gain Buffer Amplifier CHA2098b Typical Performance Tamb=+25°C, Vd=3.5V, Vg=-0.1V 20 19 18 GAIN (dB) 17 16 15 14 13 12 11 10 18 22 26 30 34 38 FREQUENCY (GHz) 0 0 -5 -5 -10 -10 Output -15 -15 Input -20 -20 -25 -25 -30 OUTPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) Gain vs Frequency -30 18 22 26 30 34 38 FREQUENCY (GHz) Input and Output Loss vs. Frequency Ref. : DSCHA20981233-21 Aug 01 3/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 20-40GHz High Gain Buffer Amplifier CHA2098b 25 20 P-1dB 18 23 16 22 14 21 P-1dB (dBm) GAIN (dB) 24 12 Gain 20 10 19 8 18 6 17 4 16 2 15 0 20 22 24 26 28 30 32 34 36 38 FREQUENCY (GHz) Gain and Compressed Power vs. Frequency 20 GAIN (dB) 18 18 Gain 16 16 14 14 12 12 10 10 PAE 8 8 6 6 4 4 2 2 0 POWER ADDED EFFICIENCY (%) 20 0 10 11 12 13 14 15 16 17 18 19 OUTPUT POWER (dBm) Gain and Efficiency Vs Output Power (F=30GHz) 25 250 220 Pout 15 190 10 160 IDS 5 0 -12 IDS (mA) POUT (dBm), GAIN (dB) Gain 20 130 100 -10 -8 -6 -4 -2 0 INPUT POWER (dBm) Gain, Output Power and IDS vs. Input Power (F=38GHz) Ref. : DSCHA20981233-21 Aug 01 4/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 20-40GHz High Gain Buffer Amplifier CHA2098b Typical Scattering Parameters (on Wafer) Bias conditions: Vd=3.5V Vg=0V Freq. GHz S11 dB S11 /° S12 dB S12 /° S21 dB S21 /° 15 -18.37 116.1 -69.59 148.0 16.72 130.6 -7.99 77.7 16 -19.49 113.8 -65.95 154.4 18.13 102.0 -10.02 51.4 17 -20.63 113.4 -65.20 -158.1 18.90 73.7 -13.84 20.3 18 -22.15 114.4 -60.58 155.1 19.31 46.4 -16.29 -13.8 19 -24.36 120.5 -58.79 155.7 19.42 22.3 -19.17 -64.4 20 -26.49 140.0 -54.42 136.8 19.97 -1.6 -18.06 -99.8 21 -24.05 163.8 -51.83 127.3 19.63 -27.5 -16.16 -138.5 22 -22.26 156.6 -52.04 81.3 18.79 -46.8 -16.79 -168.8 23 -21.20 159.0 -60.55 107.0 18.65 -57.2 -17.79 168.2 24 -20.46 150.9 -54.03 100.6 19.86 -80.0 -18.36 -171.8 25 -20.57 148.8 -50.49 90.6 19.82 -102.7 -15.84 175.6 26 -20.37 145.4 -49.95 75.8 19.89 -121.3 -15.59 171.0 27 -20.01 141.8 -49.48 67.0 19.82 -142.0 -14.72 159.9 28 -20.38 136.9 -48.65 53.7 19.60 -161.3 -14.17 154.0 29 -20.51 132.4 -48.33 37.5 19.53 -179.4 -13.37 144.0 30 -21.26 127.2 -49.24 25.1 19.45 162.3 -12.84 131.6 31 -21.82 125.6 -47.95 22.8 19.64 144.2 -13.15 123.6 32 -22.62 129.0 -47.60 3.6 19.53 123.6 -12.50 114.6 33 -21.97 127.4 -48.30 -3.7 19.28 104.7 -12.28 102.1 34 -22.69 118.7 -45.57 -22.6 19.27 86.4 -11.93 93.5 35 -23.12 114.3 -47.53 -45.6 19.15 66.9 -11.82 79.2 36 -22.50 103.9 -48.92 -49.1 18.96 46.8 -12.13 67.7 37 -22.15 91.0 -48.07 -69.1 18.52 28.3 -12.07 58.5 38 -20.65 71.9 -49.33 -67.4 18.36 10.1 -11.87 47.6 39 -18.94 39.2 -46.75 -105.6 18.43 -9.4 -10.98 36.1 40 -17.28 8.4 -47.08 -108.5 18.34 -31.1 -10.60 19.8 41 -14.60 -18.5 -48.00 -134.6 17.82 -53.7 -10.11 6.4 42 -12.20 -40.3 -47.52 -160.4 17.39 -76.8 -9.83 -7.0 43 -10.21 -59.7 -46.21 160.6 16.75 -99.2 -9.28 -20.8 44 -8.25 -80.9 -49.74 147.7 15.88 -123.1 -8.54 -37.0 45 -6.83 -97.6 -48.99 136.5 14.64 -145.6 -8.12 -50.7 46 -5.68 -113.3 -53.12 32.5 13.15 -167.2 -7.61 -62.9 47 -4.73 -129.1 -50.08 -34.8 11.65 172.2 -7.25 -77.1 Ref. : DSCHA20981233-21 Aug 01 5/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 S22 dB S22 /° Specifications subject to change without notice 20-40GHz High Gain Buffer Amplifier CHA2098b Chip Assembly and Mechanical Data To Vdd DC Drain supply feed 100pF IN OUT 100pF 100pF To Vgs2,3 DC Gate supply feed To Vgs1 DC Gate supply feed Note: Supply feed should be capacitively bypassed. 1670 +/- 10 880 550 970 +/- 10 520 520 240 420 720 Bonding pad positions. (Chip thickness : 100µm. All dimensions are in micrometers) Ref. : DSCHA20981233-21 Aug 01 6/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 20-40GHz High Gain Buffer Amplifier CHA2098b Typical Bias Tuning The circuit schematic is given below: Vd1 Vd 2,3 IN OUT 27 Vg 2 Vg1 Vg 3 For typical operation, the three drain biases are connected altogether. In a same way, all the gate biases are connected together at the same power supply, tuned to drive a small signal operating current of 130mA. A separate access to the gate voltages of each stage (Vg1,2 & 3) is provided for the fine tuning of the stages regarding the application. Ref. : DSCHA20981233-21 Aug 01 7/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 20-40GHz High Gain Buffer Amplifier CHA2098b Ordering Information Chip form : CHA2098b99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA20981233-21 Aug 01 8/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice