IRFB3407ZPbF
HEXFET® Power MOSFET
Applications
l
l
l
Battery Management
High Speed Power Switching
Hard Switched and High Frequency Circuits
G
Benefits
l
l
l
l
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
D
S
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche SOA
Enhanced body diode dV/dt and dI/dt
Capability
Lead-Free
75V
5.0mΩ
6.4mΩ
122A
120A
c
D
G
D
S
TO-220AB
IRFB3407ZPbF
G
D
S
Gate
Drain
Source
Ordering Information
Base part number
Package Type
IRFB3407ZPbF
TO-220
Standard Pack
Form
Quantity
Tube
50
Complete Part Number
IRFB3407ZPbF
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
Parameter
Max.
122
86
120
488
230
1.5
± 20
6.7
-55 to + 175
d
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
f
dv/dt
TJ
TSTG
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
d
e
d
Units
c
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
A
W
W/°C
V
V/ns
°C
300
x
x
10lbf in (1.1N m)
140
See Fig. 14, 15, 21a, 21b
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
j
Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
1
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© 2013 International Rectifier
Typ.
Max.
Units
–––
0.50
–––
0.65
–––
62
°C/W
March 15, 2013
IRFB3407ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
RG(int)
IDSS
Internal Gate Resistance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
75
–––
–––
2.0
–––
0.094
5.0
–––
–––
–––
6.4
4.0
–––
0.70
–––
–––
–––
–––
–––
20
250
100
-100
–––
–––
–––
–––
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5mA
mΩ VGS = 10V, ID = 75A
V VDS = VGS, ID = 150μA
g
d
Ω
μA
nA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
320
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
79
19
24
55
15
64
38
65
4750
420
190
440
410
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
ns
Conditions
VDS = 50V, ID = 75A
ID = 75A
VDS = 38V
VGS = 10V
ID = 75A, VDS =0V, VGS = 10V
VDD = 49V
ID = 75A
RG = 2.6Ω
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
VGS = 0V, VDS = 0V to 60V
g
g
pF
i
h
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
di
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.050mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
2
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© 2013 International Rectifier
Min. Typ. Max. Units
–––
–––
––– 120
–––
c
488
Conditions
MOSFET symbol
A
D
showing the
integral reverse
G
S
p-n junction diode.
––– –––
1.3
V TJ = 25°C, IS = 75A, VGS = 0V
VR = 64V,
–––
33
50
ns TJ = 25°C
T
=
125°C
IF = 75A
–––
39
59
J
di/dt = 100A/μs
–––
42
63
nC TJ = 25°C
TJ = 125°C
–––
56
84
–––
2.2
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
g
ISD ≤ 75A, di/dt ≤ 1570A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS .
Rθ is measured at TJ approximately 90°C.
March 15, 2013
IRFB3407ZPbF
1000
1000
100
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
4.5V
10
BOTTOM
4.5V
10
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
1
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
2.5
100
T J = 175°C
T J = 25°C
10
1
VDS = 25V
≤60μs PULSE WIDTH
0.1
ID = 72A
VGS = 10V
2.0
1.5
1.0
0.5
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
12.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 72A
C oss = C ds + C gd
C, Capacitance (pF)
10
Fig 2. Typical Output Characteristics
1000
10000
Ciss
Coss
1000
Crss
10.0
VDS= 60V
VDS= 38V
VDS= 15V
8.0
6.0
4.0
2.0
0.0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
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© 2013 International Rectifier
0
10
20
30
40
50
60
70
80
90
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
March 15, 2013
IRFB3407ZPbF
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 175°C
100
T J = 25°C
10
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100μsec
100
1msec
10msec
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.1
0.0
0.5
1.0
1.5
1
2.0
Limited By Package
ID, Drain Current (A)
100
80
60
40
20
0
25
50
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
140
0
100
Id = 5mA
95
90
85
80
75
70
65
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
1.2
EAS , Single Pulse Avalanche Energy (mJ)
600
1.0
0.8
Energy (μJ)
100
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
120
10
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
0.6
0.4
0.2
0.0
ID
15A
26A
BOTTOM 75A
TOP
500
400
300
200
100
0
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
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© 2013 International Rectifier
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
March 15, 2013
IRFB3407ZPbF
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
τJ
0.02
0.01
0.01
R1
R1
τJ
τ1
R2
R2
τ2
τ1
τ2
R3
R3
τ3
τC
τ
τ3
0.2313
Ci= τi/Ri
Ci i/Ri
1E-005
0.009191
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Ri (°C/W) τi (sec)
0.1164 0.000088
0.3009 0.001312
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Δ Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
0.01
Duty Cycle =
Single Pulse
0.05
10
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
150
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 21a, 21b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 75A
125
100
75
50
25
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5
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© 2013 International Rectifier
March 15, 2013
IRFB3407ZPbF
20
IF = 48A
V R = 64V
4.0
3.0
2.5
ID = 150μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
2.0
1.5
1.0
10
5
0
0.5
-75 -50 -25 0
0
25 50 75 100 125 150 175 200
200
400
600
800
1000
T J , Temperature ( °C )
diF /dt (A/μs)
Fig 16. Threshold Voltage vs. Temperature
Fig. 17 - Typical Recovery Current vs. dif/dt
20
420
IF = 72A
V R = 64V
IF = 48A
V R = 64V
340
TJ = 25°C
TJ = 125°C
QRR (A)
15
10
5
TJ = 25°C
TJ = 125°C
260
180
100
0
20
0
200
400
600
800
1000
0
200
diF /dt (A/μs)
400
600
800
1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
420
IF = 72A
V R = 64V
340
QRR (A)
IRR (A)
TJ = 25°C
TJ = 125°C
15
3.5
IRR (A)
VGS(th), Gate threshold Voltage (V)
4.5
TJ = 25°C
TJ = 125°C
260
180
100
20
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6
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© 2013 International Rectifier
March 15, 2013
IRFB3407ZPbF
D.U.T
Driver Gate Drive
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
+
V
- DD
IAS
VGS
20V
tp
A
0.01Ω
I AS
Fig 21a. Unclamped Inductive Test Circuit
LD
Fig 21b. Unclamped Inductive Waveforms
VDS
VDS
90%
+
VDD -
10%
D.U.T
VGS
VGS
Pulse Width < 1μs
Duty Factor < 0.1%
td(on)
Fig 22a. Switching Time Test Circuit
tr
td(off)
tf
Fig 22b. Switching Time Waveforms
Id
Vds
Vgs
L
DUT
0
VCC
Vgs(th)
1K
Qgs1 Qgs2
Fig 23a. Gate Charge Test Circuit
7
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© 2013 International Rectifier
Qgd
Qgodr
Fig 23b. Gate Charge Waveform
March 15, 2013
IRFB3407ZPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
E XAMPL E : T H IS IS AN IR F B 4310GPB F
Note: "G" s uffix in part number
indicates "H alogen - F ree"
INT E R NAT IONAL
R E CT IF IE R
L OGO
Note: "P" in as s embly line pos ition
indicates "L ead - F ree"
AS S E MB L Y
L OT CODE
P AR T NU MB E R
DAT E CODE :
Y= L AS T DIGIT OF
CAL E NDAR YE AR
WW= WORK WE E K
X= F ACT OR Y CODE
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Qualification information†
Qualification level
Moisture Sensitivity Level
TO-220AB
RoHS compliant
Industrial††
(per JEDEC JESD47F††† guidelines)
N/A
(per JE DE C J-S TD-020D†††)
Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
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© 2013 International Rectifier
March 15, 2013