Features • 2.7V to 3.6V Supply – Full Read and Write Operation • Low Power Dissipation • • • • • • – 8 mA Active Current – 50 µA CMOS Standby Current Read Access Time – 300 ns Byte Write – 3 ms Direct Microprocessor Control – DATA Polling – READY/BUSY Open Drain Output High Reliability CMOS Technology – Endurance: 100,000 Cycles – Data Retention: 10 Years JEDEC Approved Byte-Wide Pinout Industrial Temperature Ranges 1. Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read-only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation less than 30 mW. When the device is deselected the standby current is less than 50 µA. 64K (8K x 8) Battery-Voltage Parallel EEPROMs AT28BV64 Not Recommended for New Designs. The AT28BV64 is accessed like a Static RAM for the read or write cycles without the need for external components. During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. The device includes two methods for detecting the end of a write cycle, level detection of RDY/BUSY and DATA polling of I/O 7 . Once the end of a write cycle has been detected, a new access for a read or write can begin. Atmel’s AT28BV64 has additional features to ensure high quality and manufacturability. The device utilizes error correction internally for extended endurance and for improved data retention characteristics. An extra 32-bytes of EEPROM are available for device identification or tracking. 0493C–PEEPR–08/07 AT28BV64 2.2 2. Pin Configurations Pin Name Function A0 - A12 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O7 Data Inputs/Outputs RDY/BUSY Ready/Busy Output NC No Connect DC Don’t Connect PLCC Top View 4 3 2 1 32 31 30 29 28 27 26 25 24 23 22 21 14 15 16 17 18 19 20 5 6 7 8 9 10 11 12 13 A8 A9 A11 NC OE A10 CE I/O7 I/O6 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE NC A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 TSOP Top View OE A11 A9 A8 NC WE VCC RDY/BUSY A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 I/O1 I/O2 VSS DC I/O3 I/O4 I/O5 A6 A5 A4 A3 A2 A1 A0 NC I/O0 RDY/BUSY A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 2.3 A7 A12 RDY/BUSY DC VCC WE NC 2.1 PDIP, SOIC Top View 2 0493C–PEEPR–08/07 AT28BV64 3. Block Diagram 4. Absolute Maximum Ratings* Temperature Under Bias................................ -55°C to +125°C Storage Temperature ..................................... -65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability Voltage on OE and A9 with Respect to Ground ...................................-0.6V to +13.5V 3 0493C–PEEPR–08/07 5. Device Operation 5.1 Read The AT28BV64 is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in a high impedance state whenever CE or OE is high. This dual line control gives designers increased flexibility in preventing bus contention. 5.2 Byte Write Writing data into the AT28BV64 is similar to writing into a Static RAM. A low pulse on the WE or CE input with OE high and CE or WE low (respectively) initiates a byte write. The address location is latched on the falling edge of WE (or CE); the new data is latched on the rising edge. Internally, the device performs a self-clear before write. Once a byte write has been started, it will automatically time itself to completion. Once a programming operation has been initiated and for the duration of tWC, a read operation will effectively be a polling operation. 5.3 READY/BUSY Pin 1 is an open drain READY/BUSY output that can be used to detect the end of a write cycle. RDY/BUSY is actively pulled low during the write cycle and is released at the completion of the write. The open drain connection allows for OR-tying of several devices to the same RDY/BUSY line. 5.4 DATA Polling The AT28BV64 provides DATA Polling to signal the completion of a write cycle. During a write cycle, an attempted read of the data being written results in the complement of that data for I/O7 (the other outputs are indeterminate). When the write cycle is finished, true data appears on all outputs. 5.5 Write Protection Inadvertent writes to the device are protected against in the following ways: (a) VCC sense – if VCC is below 1.8V (typical) the write function is inhibited; (b) VCC power on delay – once VCC has reached 2.0V the device will automatically time out 10 ms (typical) before allowing a byte write; and (c) Write Inhibit – holding any one of OE low, CE high or WE high inhibits byte write cycles. 4 AT28BV64 0493C–PEEPR–08/07 AT28BV64 6. DC and AC Operating Range AT28BV64-30 Operating Temperature (Case) -40°C - 85°C VCC Power Supply 2.7V to 3.6V 7. Operating Modes Mode CE OE WE I/O Read VIL VIL VIH DOUT VIL VIH VIL DIN VIH X(1) X High Z Write Inhibit X X VIH Write Inhibit X VIL X Output Disable X VIH X Write (2) Standby/Write Inhibit Notes: High Z 1. X can be VIL or VIH. 2. Refer to AC Programming Waveforms. 8. DC Characteristics Symbol Parameter Condition ILI Input Load Current ILO Min Max Units VIN = 0V to VCC + 1.0V 5 µA Output Leakage Current VI/O = 0V to VCC 5 µA ISB VCC Standby Current CMOS CE = VCC - 0.3V to VCC + 1.0V 50 µA ICC VCC Active Current AC f = 5 MHz; IOUT = 0 mA; CE = VIL 8 mA VIL Input Low Voltage 0.6 V VIH Input High Voltage VOL Output Low Voltage VOH Output High Voltage 2.0 V IOL = 1 mA 0.3 V IOL = 2 mA for RDY/BUSY 0.3 V IOH = -100 µA 2.0 V 5 0493C–PEEPR–08/07 9. AC Read Characteristics AT28BV64-30 Symbol Parameter tACC Min Max Units Address to Output Delay 300 ns (1) CE to Output Delay 300 ns tOE(2) OE to Output Delay 0 150 ns tDF(3)(4) CE or OE High to Output Float 0 60 ns tOH Output Hold from OE, CE or Address, whichever occurred first 0 tCE ns 10. AC Read Waveforms(1)(2)(3)(4) Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC. 2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC. 3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF). 4. This parameter is characterized and is not 100% tested. 6 AT28BV64 0493C–PEEPR–08/07 AT28BV64 11. Input Test Waveforms and Measurement Level tR, tF < 20 ns 12. Output Test Load 13. Pin Capacitance f = 1 MHz, T = 25°C(1) Symbol Typ Max Units Conditions CIN 4 6 pF VIN = 0V COUT 8 12 pF VOUT = 0V Note: 1. This parameter is characterized and is not 100% tested. 7 0493C–PEEPR–08/07 14. AC Write Characteristics Symbol Parameter Min Max tAS, tOES Address, OE Set-up Time 10 ns tAH Address Hold Time 100 ns tWP Write Pulse Width (WE or CE) 150 tDS Data Set-up Time 100 ns tDH, tOEH Data, OE Hold Time 10 ns tDB Time to Device Busy 50 ns tWC Write Cycle Time 3 ms 1000 Units ns 15. AC Write Waveforms 15.1 WE Controlled 15.2 CE Controlled 8 AT28BV64 0493C–PEEPR–08/07 AT28BV64 16. Data Polling Characteristics(1) Symbol Parameter tDH Data Hold Time tOEH OE Hold Time tOE tWR Notes: Min Max Units 10 ns 10 ns (2) OE to Output Delay Write Recovery Time Typ ns 0 ns 1. These parameters are characterized and not 100% tested. 2. See AC Characteristics. 17. Data Polling Waveforms 9 0493C–PEEPR–08/07 18. Ordering Information 18.1 Standard Package(1) ICC (mA) tACC (ns) Active 300 Note: 8 Standby 0.05 Operating Voltage 2.7V to 3.6V Ordering Code Package AT28BV64-30JI AT28BV64-30PI AT28BV64-30SI AT28BV64-30TI 32J 28P6 28S 28T Operation Range Industrial (-40° C to 85° C) 1. See Valid Part Number table below. Package Type 32J 32-lead, Plastic J-leaded Chip Carrier (PLCC) 28P6 28-lead, 0.600" Wide, Plastic Dual Inline Package (PDIP) 28S 28-lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC) 28T 28-lead, Plastic Thin Small Outline Package (TSOP) 18.2 Valid Part Number The following table lists standard Atmel® products that can be ordered. Device Numbers Speed AT28BV64 30 Package and Temperature Combinations JI, PI, SI, TI 19. Die Products Reference Section: Parallel EEPROM Die Products 10 AT28BV64 0493C–PEEPR–08/07 AT28BV64 20. Packaging Information 20.1 32J – PLCC 1.14(0.045) X 45˚ PIN NO. 1 IDENTIFIER 1.14(0.045) X 45˚ 0.318(0.0125) 0.191(0.0075) E1 E2 B1 E B e A2 D1 A1 D A 0.51(0.020)MAX 45˚ MAX (3X) COMMON DIMENSIONS (Unit of Measure = mm) D2 Notes: 1. This package conforms to JEDEC reference MS-016, Variation AE. 2. Dimensions D1 and E1 do not include mold protrusion. Allowable protrusion is .010"(0.254 mm) per side. Dimension D1 and E1 include mold mismatch and are measured at the extreme material condition at the upper or lower parting line. 3. Lead coplanarity is 0.004" (0.102 mm) maximum. SYMBOL MIN NOM MAX A 3.175 – 3.556 A1 1.524 – 2.413 A2 0.381 – – D 12.319 – 12.573 D1 11.354 – 11.506 D2 9.906 – 10.922 E 14.859 – 15.113 E1 13.894 – 14.046 E2 12.471 – 13.487 B 0.660 – 0.813 B1 0.330 – 0.533 e NOTE Note 2 Note 2 1.270 TYP 10/04/01 R 2325 Orchard Parkway San Jose, CA 95131 TITLE 32J, 32-lead, Plastic J-leaded Chip Carrier (PLCC) DRAWING NO. REV. 32J B 11 0493C–PEEPR–08/07 20.2 28P6 – PDIP D PIN 1 E1 A SEATING PLANE A1 L B B1 e E 0º ~ 15º C COMMON DIMENSIONS (Unit of Measure = mm) REF MIN NOM MAX A – – 4.826 A1 0.381 – – D 36.703 – 37.338 E 15.240 – 15.875 E1 13.462 – 13.970 B 0.356 – 0.559 B1 1.041 – 1.651 L 3.048 – 3.556 C 0.203 – 0.381 eB 15.494 – 17.526 SYMBOL eB Notes: 1. This package conforms to JEDEC reference MS-011, Variation AB. 2. Dimensions D and E1 do not include mold Flash or Protrusion. Mold Flash or Protrusion shall not exceed 0.25 mm (0.010"). e NOTE Note 2 Note 2 2.540 TYP 09/28/01 R 12 2325 Orchard Parkway San Jose, CA 95131 TITLE 28P6, 28-lead (0.600"/15.24 mm Wide) Plastic Dual Inline Package (PDIP) DRAWING NO. 28P6 REV. B AT28BV64 0493C–PEEPR–08/07 AT28BV64 20.3 28S – SOIC Dimensions in Millimeters and (Inches). Controlling dimension: Millimeters. 0.51(0.020) 0.33(0.013) 7.60(0.2992) 10.65(0.419) 7.40(0.2914) 10.00(0.394) PIN 1 1.27(0.50) BSC TOP VIEW 18.10(0.7125) 17.70(0.6969) 2.65(0.1043) 2.35(0.0926) 0.30(0.0118) 0.10(0.0040) SIDE VIEWS 0.32(0.0125) 0.23(0.0091) 0º ~ 8º 1.27(0.050) 0.40(0.016) 8/4/03 R 2325 Orchard Parkway San Jose, CA 95131 TITLE 28S, 28-lead, 0.300" Body, Plastic Gull Wing Small Outline (SOIC) JEDEC Standard MS-013 DRAWING NO. REV. 28S B 13 0493C–PEEPR–08/07 20.4 28T – TSOP PIN 1 0º ~ 5º c Pin 1 Identifier Area D1 D L b e L1 A2 E A GAGE PLANE SEATING PLANE COMMON DIMENSIONS (Unit of Measure = mm) A1 MIN NOM MAX A – – 1.20 A1 0.05 – 0.15 A2 0.90 1.00 1.05 D 13.20 13.40 13.60 D1 11.70 11.80 11.90 Note 2 E 7.90 8.00 8.10 Note 2 L 0.50 0.60 0.70 SYMBOL Notes: 1. This package conforms to JEDEC reference MO-183. 2. Dimensions D1 and E do not include mold protrusion. Allowable protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side. 3. Lead coplanarity is 0.10 mm maximum. L1 NOTE 0.25 BASIC b 0.17 0.22 0.27 c 0.10 – 0.21 e 0.55 BASIC 12/06/02 R 14 2325 Orchard Parkway San Jose, CA 95131 TITLE 28T, 28-lead (8 x 13.4 mm) Plastic Thin Small Outline Package, Type I (TSOP) DRAWING NO. REV. 28T C AT28BV64 0493C–PEEPR–08/07 Headquarters International Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131 USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Atmel Europe Le Krebs 8, Rue Jean-Pierre Timbaud BP 309 78054 Saint-Quentin-enYvelines Cedex France Tel: (33) 1-30-60-70-00 Fax: (33) 1-30-60-71-11 Atmel Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Technical Support [email protected] Sales Contact www.atmel.com/contacts Product Contact Web Site www.atmel.com Literature Requests www.atmel.com/literature Disclaimer: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of Atmel products. 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