FGA30S120P
Shorted AnodeTM IGBT
Features
General Description
• High speed switching
Using advanced Field Stop Trench and Shorted Anode technology, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior
conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This device is
designed for induction heating and microwave oven.
• Low saturation voltage: VCE(sat) =1.75V @ IC = 30A
• High input impedance
• RoHS compliant
Applications
• Induction Heating and Microwave Oven
• Soft Switching Applications
C
G
TO-3PN
E
G C E
Absolute Maximum Ratings T
Symbol
= 25°C unless otherwise noted
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
C
Collector Current
@ TC = 25oC
Collector Current
@ TC = 100oC
ICM (1)
Pulsed Collector Current
IF
Diode Continuous Forward Current
IF
Diode Continuous Forward Current
PD
TJ
Maximum Power Dissipation
Maximum Power Dissipation
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Units
1300
V
±25
V
60
A
30
A
150
A
@ TC = 25oC
60
A
@ TC = 100oC
30
A
348
W
o
@ TC = 25 C
@ TC =
100oC
174
Operating Junction Temperature
Tstg
Ratings
W
-55 to +175
o
-55 to +175
o
C
C
oC
300
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
--
0.43
o
40
o
--
Units
C/W
C/W
Notes:
1: Limited by Tjmax
©2012 Fairchild Semiconductor Corporation
FGA30S120P Rev. C1
1
www.fairchildsemi.com
FGA30S120P Shorted AnodeTM IGBT
October 2012
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGA30S120P
FGA30S120P
TO-3PN
-
-
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
ICES
Collector Cut-Off Current
VCE = 1300, VGE = 0V
-
-
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±500
nA
IC = 30mA, VCE = VGE
4.5
6.0
7.5
V
IC = 30A, VGE = 15V
TC = 25oC
-
1.75
2.3
V
IC = 30A, VGE = 15V,
TC = 125oC
-
1.85
-
V
IC = 30A, VGE = 15V,
TC = 175oC
-
1.9
-
V
IF = 30A, TC = 25oC
-
1.7
2.2
V
o
IF = 30A, TC = 175 C
-
2.1
-
V
-
3345
-
pF
VCE = 30V, VGE = 0V,
f = 1MHz
-
75
-
pF
-
60
-
pF
On Characteristics
VGE(th)
VCE(sat)
VFM
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
Diode Forward Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characcteristics
td(on)
Turn-On Delay Time
-
39
-
ns
tr
Rise Time
-
360
-
ns
td(off)
Turn-Off Delay Time
-
620
-
ns
tf
Fall Time
-
160
210
ns
Eon
Turn-On Switching Loss
-
1.3
-
mJ
Eoff
Turn-Off Switching Loss
-
1.22
1.6
mJ
Ets
Total Switching Loss
-
2.52
-
mJ
td(on)
Turn-On Delay Time
-
38
-
ns
tr
Rise Time
-
375
-
ns
td(off)
Turn-Off Delay Time
-
635
-
ns
tf
Fall Time
-
270
-
ns
Eon
Turn-On Switching Loss
-
1.59
-
mJ
Eoff
Turn-Off Switching Loss
-
1.78
-
mJ
Ets
Total Switching Loss
-
3.37
-
mJ
Qg
Total Gate Charge
-
78
-
nC
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCC = 600V, IC = 30A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 600V, IC = 30A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 175oC
VCE = 600V, IC = 30A,
VGE = 15V
2
FGA30S120P Rev. C1
-
4.2
-
nC
-
33.3
-
nC
www.fairchildsemi.com
FGA30S120P Shorted AnodeTM IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
VGE = 17V
160
20V
o
15V
20V
T C = 175 C
12V
10V
120
9V
80
8V
40
15V
VGE = 17V
160
Collector Current, IC [A]
o
T C = 25 C
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
200
200
12V
120
10V
80
9V
8V
40
7V
7V
0
0
0
2
4
6
Collector-Emitter Voltage, V CE [V]
0
8
Figure 3. Typical Saturation Voltage
Characteritics
200
Common Emitter
VCE = 20V
T C = 25oC
Collector Current, I C [A]
Collector Current, IC [A]
Common Emitter
VGE = 15V
o
T C = 175 C
120
80
1.0
2.0
3.0
4.0
5.0
Collector-Emitter Voltage, VCE [V]
120
80
0
6.0
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
60A
2.5
30A
2.0
IC = 15A
1.5
2
3
4
5
Gate-Emitter Voltage,VGE [V]
6
3
Common Emitter
o
TC = 25 C
16
12
8
30A
60A
4
IC = 15A
0
50
75
100
125
150
175
o
Collector-EmitterCase Temperature, TC [ C]
FGA30S120P Rev. C1
1
20
Common Emitter
VGE = 15V
3.0
0
Figure 6. Saturation Voltage vs. VGE
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
o
TC = 175 C
40
0
0.0
1.0
25
TC = 25oC
160
40
3.5
8
Figure 4. Transfer Characteristics
200
160
2
4
6
Collector-Emitter Voltage, V CE [V]
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGA30S120P 1200V, 30A ShortedAnodeTM IGBT
Typical Performance Characteristics
FGA30S120P Shorted AnodeTM IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
10000
20
Common Emitter
Cies
o
Collector-Emitter Voltage, VCE [V]
TC = 175 C
Capacitance [pF]
16
12
8
30A
4
1000
Coes
100
Common Emitter
VGE = 0V, f = 1MHz
60A
Cres
o
T C = 25 C
IC = 15A
10
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
1
20
Figure 9. Gate Charge Characteristics
200
100
Common Emitter
400V
50µs
600V
12
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
o
30
Figure 10. SOA Characteeristics
15
TC = 25 C
10
20
Collector-Emitter Voltage, V CE [V]
VCC = 200V
9
6
3
100µs
10
1ms
10 ms
1
DC
*Notes:
0.1
o
1. TC = 25 C
o
2. TJ = 170 C
3. Single Pulse
0.01
0
0
1
30
60
Gate Charge, Qg [nC]
Figure 11. Turn-On Characteristics vs
Gate Resistance
Figure 12. Turn-off Characteristics vs.
Gate Resistance
10000
500
Common Emitter
VCC = 600V, VGE = 15V
IC = 30A
tr
o
Switching Time [ns]
Switching Time [ns]
10
100
1000 1200
Collector-Emitter Voltage, VCE [V]
100
td(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 30A
TC = 25 C
o
TC = 175 C
td(off)
1000
tf
o
TC = 25 C
o
TC = 175 C
20
10
20
30
40
50
60
Gate Resistance, RG [Ω]
100
70
4
FGA30S120P Rev. C1
0
10
20
30
40
50
Gate Resistance, RG [Ω]
60
70
www.fairchildsemi.com
FGA30S120P Shorted AnodeTM IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics VS.
Collector Current
Figure 14.Turn-off Characteristics VS.
Collector Current
2500
2500
Common Emitter
VGE = 15V, RG = 10Ω
Common Emitter
VGE = 15V, RG = 10Ω
1000
TC = 25oC
TC = 25oC
tr
o
Switching Time [ns]
Switching Time [ns]
TC = 175 C
100
td(on)
o
1000
TC = 175 C
td(off)
tf
100
10
20
40
20
60
Collector Current, I C [A]
Figure 15. Switching Loss VS. Gate Resistance
30k
Common Emitter
VCC = 600V, VGE = 15V
TC = 25 C
o
TC = 175 C
} Eon
o
T C = 25 C
T C = 175oC
Switching Loss [uJ]
Switching Loss [mJ]
o
{
Common Emitter
VGE = 15V, RG = 10Ω
10k
IC = 30A
1
60
Figure 16. Switching Loss VS. Collector Current
10
Eoff
40
Collector Current, IC [A]
1k
{
{
Eoff
Eon
0.5
100
0
10
20
30
40
50
60
Gate Resistance, RG [Ω]
70
0
80
Figure 17. Turn off Switching SOA Characteristics
20
30
40
50
Collector Current, IC [A]
60
70
Figure 18. Forward Characteristics
80
Forward Current, IF [A]
100
Collector Current, IC [A]
10
10
Safe Operating Area
VGE = 15V, TC = 175 C
o
TC = 25 C
o
0.5
1000
0
5
FGA30S120P Rev. C1
o
TJ = 175 C
TC = 175 C
1
10
100
Collector-Emitter Voltage, VCE [V]
10
1
o
1
o
TJ = 25 C
1
Forward Voltage, VF [V]
2
www.fairchildsemi.com
FGA30S120P Shorted AnodeTM IGBT
Figure 19.. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01 single pulse
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
6
FGA30S120P Rev. C1
www.fairchildsemi.com
FGA30S120P Shorted AnodeTM IGBT
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
7
FGA30S120P Rev. C1
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
8
FGA30S120P Rev. C1
www.fairchildsemi.com
FGA30S120P 1200V, 30A ShortedAnodeTM IGBT
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