PD - 94018A HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRL5Y024CM 55V, N-CHANNEL Product Summary Part Number BVDSS IRL5Y024CM 55V RDS(on) 0.069Ω ID 17A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. TO-257AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 17 11 68 35 0.28 ±16 49 11 3.5 4.0 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical) C g For footnotes refer to the last page www.irf.com 1 10/27/00 IRL5Y024CM Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units Test Conditions 55 — — V VGS = 0V, ID = 250µA — 0.06 — V/°C Reference to 25°C, ID = 1.0mA — — — 1.0 6.0 — — — — — — — — — 0.069 0.085 0.109 2.0 — 25 250 VGS(th) gfs IDSS Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.8 100 -100 15 3.7 8.5 11 133 25 66 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 520 140 57 — — — VGS = 10V, ID = 11A ➃ VGS = 5.0V, ID = 11A VGS = 4.0V, ID = 9.0A VDS = VGS, ID = 250µA VDS = 25V, IDS = 11A ➃ VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125°C VGS = 16V VGS = -16V VGS =5.0V, ID = 11A VDS = 44V Ω V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State µA nA nC VDD = 28V, ID = 11A, VGS =5.0V, RG = 12Ω ns nH Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 17 68 1.3 70 120 Test Conditions A V ns nC Tj = 25°C, IS = 11A, VGS = 0V ➃ Tj = 25°C, IF = 11A, di/dt ≥ 100A/µs VDD ≤ 30V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 3.57 Test Conditions °C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRL5Y024CM 100 100 VGS 15V 12V 10V 8.0V 5.0V 4.0V 3.0V BOTTOM 2.5V VGS 15V 12V 10V 8.0V 5.0V 4.0V 3.0V BOTTOM 2.5V 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 2.5V 1 20µs PULSE WIDTH Tj = 25°C 10 2.5V 1 20µs PULSE WIDTH Tj = 150°C 0.1 0.1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 10 15 V DS = 15V 20µs PULSE WIDTH 4 6 8 10 12 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150 ° C 2 100 Fig 2. Typical Output Characteristics 2.5 TJ = 25 ° C 1 10 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 1 ID = 17A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRL5Y024CM 1000 VGS , Gate-to-Source Voltage (V) 800 C, Capacitance (pF) 15 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C iss 600 400 C oss 200 C rss 10 9 6 3 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 VDS , Drain-to-Source Voltage (V) 8 12 16 20 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 100 ISD , Reverse Drain Current (A) 4 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage TJ = 150 ° C TJ = 25 ° C 1 V GS = 0 V 0.8 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 0.1 0.2 1.4 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 44V VDS = 27V VDS = 11V 12 0 1 ID = 11A 2.6 10 100µs 1ms 1 10ms Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRL5Y024CM 20 RD VDS VGS I D , Drain Current (A) 16 D.U.T. RG + -VDD 12 5.0V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 8 Fig 10a. Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL5Y024CM 15V L VDS D .U .T. RG IA S 5.0V 20V D R IV E R + - VD D 0 .01 Ω tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 100 TOP 80 BOTTOM 60 40 20 0 25 V (B R )D S S ID 5.0A 7.0A 11A 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 5.0V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRL5Y024CM Footnotes: Repetitive Rating; Pulse width limited by ISD ≤ 11A, di/dt ≤ 222 A/µs, maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L= 0.8mH Peak IAS = 11A, RG= 25Ω Pulse width ≤ 400 µs; Duty Cycle ≤ 2% VDD ≤ 55V, TJ ≤ 150°C Case Outline and Dimensions — TO-257AA IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 www.irf.com 7