ON MMBD301LT3G Silicon hot-carrier diode Datasheet

MBD301G, MMBD301LT1G
Silicon Hot-Carrier Diodes
SCHOTTKY Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
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30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
Features
•
•
•
•
Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V
Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MBD301
MARKING
DIAGRAM
1
MAXIMUM RATINGS
MBD301
Rating
MBD
301
AYWWG
G
2
MMBD301LT1
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PF
Operating Junction
Temperature Range
TJ
−55 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
280
2.8
TO−92
(TO−226AC)
CASE 182
STYLE 1
200
2.0
mW
mW/°C
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
2
CATHODE
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
ANODE
MMBD301LT1
MARKING
DIAGRAM
3
1
2
SOT−23
(TO−236)
CASE 318
STYLE 8
4T M G
G
1
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
3
CATHODE
1
ANODE
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
1
Publication Order Number:
MBD301/D
MBD301G, MMBD301LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)R
30
−
−
V
Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1
CT
−
0.9
1.5
pF
Reverse Leakage (VR = 25 V) Figure 3
IR
−
13
200
nAdc
Forward Voltage (IF = 1.0 mAdc) Figure 4
VF
−
0.38
0.45
Vdc
Forward Voltage (IF = 10 mAdc) Figure 4
VF
−
0.52
0.6
Vdc
Characteristic
Reverse Breakdown Voltage (IR = 10 mA)
ORDERING INFORMATION
Package
Shipping†
MBD301G
TO−92
(Pb−Free)
5000 Units / Bulk
MMBD301LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
MMBD301LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MBD301G, MMBD301LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
2.8
500
t , MINORITY CARRIER LIFETIME (ps)
C T, TOTAL CAPACITANCE (pF)
f = 1.0 MHz
2.4
2.0
1.6
1.2
0.8
0.4
400
KRAKAUER METHOD
300
200
100
0
0
0
3.0
6.0
18
9.0
12
15
21
VR, REVERSE VOLTAGE (VOLTS)
24
27
30
0
Figure 1. Total Capacitance
30
40
50
60
70
IF, FORWARD CURRENT (mA)
80
90
100
100
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE (m A)
20
Figure 2. Minority Carrier Lifetime
10
TA = 100°C
1.0
75°C
0.1
25°C
0.01
0.001
10
10
TA = -40°C
TA = 85°C
1.0
TA = 25°C
0.1
0
6.0
12
18
VR, REVERSE VOLTAGE (VOLTS)
24
30
0.2
Figure 3. Reverse Leakage
IF(PEAK)
0.4
0.6
0.8
VF, FORWARD VOLTAGE (VOLTS)
1.0
Figure 4. Forward Voltage
CAPACITIVE
CONDUCTION
IR(PEAK)
FORWARD
CONDUCTION
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
STORAGE
CONDUCTION
PADS
DUT
Figure 5. Krakauer Method of Measuring Lifetime
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3
SAMPLING
OSCILLOSCOPE
(50 W INPUT)
1.2
MBD301G, MMBD301LT1G
PACKAGE DIMENSIONS
TO−92 (TO−226AC)
CASE 182−06
ISSUE L
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
SEATING
PLANE
ÉÉ
ÉÉ
D
L
P
J
K
D
SECTION X−X
X X
G
H
V
1
2
C
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.050 BSC
0.100 BSC
0.014
0.016
0.500
--0.250
--0.080
0.105
--0.050
0.115
--0.135
---
STYLE 1:
PIN 1. ANODE
2. CATHODE
N
N
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4
MILLIMETERS
MIN
MAX
4.45
5.21
4.32
5.33
3.18
4.19
0.407
0.533
1.27 BSC
2.54 BSC
0.36
0.41
12.70
--6.35
--2.03
2.66
--1.27
2.93
--3.43
---
MBD301G, MMBD301LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
DIM
A
A1
b
c
D
E
e
L
L1
HE
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MBD301/D
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