DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC549; JC550 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 08 Philips Semiconductors Product specification NPN general purpose transistors JC549; JC550 PINNING FEATURES • Low current (max. 100 mA) PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • General purpose switching and amplification • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. handbook, halfpage1 2 2 3 1 DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: JC559 and JC560. 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. − 30 V − 50 V JC549 − 30 V JC550 − 45 V − 200 mA − 500 mW JC550 collector-emitter voltage open base ICM peak collector current Ptot total power dissipation hFE DC current gain IC = 2 mA; VCE = 5 V 200 800 fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − 1997 Jul 08 UNIT open emitter JC549 VCEO MIN. Tamb ≤ 25 °C 2 MHz Philips Semiconductors Product specification NPN general purpose transistors JC549; JC550 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter JC549 − 30 V JC550 − 50 V JC549 − 30 V JC550 − 45 V − 5 V collector-emitter voltage open base VEBO emitter-base voltage IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA open collector Ptot total power dissipation − 500 mW Tstg storage temperature Tamb ≤ 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1997 Jul 08 3 VALUE UNIT 250 K/W Philips Semiconductors Product specification NPN general purpose transistors JC549; JC550 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current IEBO emitter cut-off current hFE DC current gain JC549B; JC550B CONDITIONS DC current gain VBEsat VBE MAX. UNIT − − 15 nA IE = 0; VCB = 30 V; Tj = 150 °C − − 5 µA IC = 0; VEB = 5 V − − 100 nA IC = 10 µA; VCE = 5 V; see Figs 2 and 3 − 150 − − 270 − IC = 2 mA; VCE = 5 V; see Figs 2 and 3 200 − 800 JC549B; JC550B 200 290 450 JC549C; JC550C 420 520 800 JC549; JC550 VCEsat TYP. IE = 0; VCB = 30 V JC549C; JC550C hFE MIN. collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 90 250 mV IC = 100 mA; IB = 5 mA − 200 600 mV IC = 10 mA; IB = 0.5 mA; note 1 − 700 − mV IC = 100 mA; IB = 5 mA; note 1 − 900 − mV base-emitter saturation voltage base-emitter voltage IC = 2 mA; VCE = 5 V; note 2 580 660 700 mV IC = 10 mA; VCE = 5 V; note 2 − − 770 mV Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 2.5 − pF Ce emitter capacitance IC = ic = 0; VEB = 500 mV; f = 1 MHz − 11.5 − pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − − MHz F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 10 Hz to 15.7 kHz − − 4 dB IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − − 4 dB Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. 1997 Jul 08 4 Philips Semiconductors Product specification NPN general purpose transistors JC549; JC550 MBH724 300 handbook, full pagewidth VCE = 5 V hFE 200 100 0 10−2 10−1 1 102 10 IC (mA) 103 JC549B; JC550B. Fig.2 DC current gain; typical values. MBH725 600 handbook, full pagewidth VCE = 5 V hFE 400 200 0 10−2 10−1 1 10 JC549C; JC550C. Fig.3 DC current gain; typical values. 1997 Jul 08 5 102 IC (mA) 103 Philips Semiconductors Product specification NPN general purpose transistors JC549; JC550 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1997 Jul 08 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN general purpose transistors JC549; JC550 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jul 08 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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