ON NTD30N02G Power mosfet 30 amps, 24 volt Datasheet

NTD30N02
Power MOSFET
30 Amps, 24 Volts
N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Pb−Free Packages are Available
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30 AMPERES
24 VOLTS
RDS(on) = 11.2 mW (Typ.)
Typical Applications
N−Channel
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
D
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
S
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
24
Vdc
Gate−to−Source Voltage − Continuous
VGS
"20
Vdc
Drain Current
− Continuous @ TA = 25°C
− Single Pulse (tpv10 ms)
ID
IDM
30
100
Total Power Dissipation @ TA = 25°C
PD
75
W
TJ, Tstg
−55 to
150
°C
EAS
50
mJ
RqJC
RqJA
RqJA
1.65
67
120
TL
260
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 24 Vdc, VGS = 10 Vdc,
L = 1.0 mH, IL(pk) = 10 A, RG = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
MARKING
DIAGRAM
Apk
1 2
3
DPAK
CASE 369C
STYLE 2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1 in. pad size,
(Cu Area 1.127 sq in).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 sq in).
2
1 Drain 3
Gate
Source
D30N02 = Device Code
Y
= Year
WW
= Work Week
G
= Pb−Free Device
°C/W
°C
4
Drain
4
Adc
YWW
D30
N02G
•
•
•
•
ORDERING INFORMATION
Package
Shipping†
DPAK
75 Units/Rail
NTD30N02G
DPAK
(Pb−Free)
75 Units/Rail
NTD30N02T4
DPAK
2500 Tape & Reel
Device
NTD30N02
NTD30N02T4G
DPAK
2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
1
Publication Order Number:
NTD30N02/D
NTD30N02
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
24
−
26.5
25.5
−
−
−
−
−
−
−
−
0.8
1.0
10
−
−
±100
1.0
−
2.1
−4.1
3.0
−
−
−
−
−
11.2
20
14.5
14.5
24
gFS
−
20
−
mhos
pF
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
mAdc
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 30 Adc)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 4.5 Vdc, ID = 15 Adc)
RDS(on)
Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 15 Adc)
Vdc
mV/°C
mW
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 20 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Transfer Capacitance
Ciss
−
1000
−
Coss
−
425
−
Crss
−
175
−
td(on)
−
7.0
15
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 20 Vdc, ID = 30 Adc,
VGS = 10 Vdc, RG = 2.5 W)
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 20 Vdc, ID = 15 Adc,
VGS = 4.5 Vdc, RG = 2.5 W)
Fall Time
Gate Charge
(VDS = 20 Vdc, ID = 30 Adc,
VGS = 4.5 Vdc) (Note 3)
tr
−
28
55
td(off)
−
22
35
tf
−
12
20
td(on)
−
12.5
−
tr
−
115
−
td(off)
−
15
−
ns
ns
tf
−
17
−
QT
−
14.4
20
Q1
−
4.0
−
Q2
−
8.5
−
VSD
−
−
−
0.95
1.10
0.80
1.2
−
−
Vdc
trr
−
30
−
ns
ta
−
14.5
−
tb
−
15.5
−
QRR
−
0.013
−
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 15 Adc, VGS = 0 Vdc)
(IS = 30 Adc, VGS = 0 Vdc) (Note 3)
(IS = 15 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
mC
NTD30N02
60
VGS = 9 V
50
8V
TJ = 25°C
4.6 V
7V
40
6V
30
VDS ≥ 10 V
5V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
60
4.2 V
5.4 V
4V
20
3.4 V
3.6 V
10
50
40
30
20
TJ = 25°C
10
TJ = 100°C
3V
1
2
3
4
5
6
7
8
0.01
3
4
5
6
7
8
9
10
7
TJ = 25°C
0.06
0.05
0.04
VGS = 4.5 V
0.03
VGS = 10 V
0.02
0.01
10
20
30
40
50
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
100
IDSS, LEAKAGE (nA)
ID = 15 A
VGS = 10 V
1.2
1
0.8
−25
0
25
50
75
100
125
150
60
VGS = 0 V
TJ = 150°C
10
1
0.1
0.01
TJ = 100°C
4
8
12
16
20
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
8
0.07
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1.6
0.6
−50
6
Figure 2. Transfer Characteristics
0.02
1.4
5
Figure 1. On−Region Characteristics
0.03
2
4
3
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID = 15 A
TJ = 25°C
0
2
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
0
1
0.04
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
24
NTD30N02
C, CAPACITANCE (pF)
2500
Ciss
2000
VDS = 0 V
VGS = 0 V
TJ = 25°C
Crss
1500
Ciss
1000
Coss
500
Crss
0
10
5
VGS
0
VDS
5
10
15
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
QT
Q1
16
Q2
VGS
3
12
2
1
0
8
ID = 30 A
VDS = 20 V
VGS = 4.5 V
TJ = 25°C
0
4
16
4
8
12
QG, TOTAL GATE CHARGE (nC)
0
1000
VDS = 20 V
ID = 30 A
VGS = 10 V
t, TIME (ns)
20
VDS
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
5
100
td(off)
tf
tr
10
td(on)
1
1
Figure 8. Gate−to−Source and Drain−to−Source
Voltage versus Total Charge
10
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
15
IS, SOURCE CURRENT (AMPS)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
VGS = 0 V
TJ = 25°C
12
9
6
3
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
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4
100
NTD30N02
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
SEATING
PLANE
−T−
C
B
V
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTD30N02/D
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