Preliminary Datasheet H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching R07DS0056EJ0300 (Previous: REJ03G1250-0200) Rev.3.00 Jul 23, 2010 Features Low on-resistance RDS(on) = 0.14 typ. (at ID = 9 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK(S)-(1)) 4 2 4 4 1 1 RENESAS Package code: PRSS0004AE-C (Package name LDPAK(S)-(2)) 2 1 3 H5N2501LS 3 2 3 H5N2501LM H5N2501LD D 1. Gate 2. Drain 3. Source 4. Drain G S Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS Ratings 250 Unit V VGSS ID 30 18 72 18 18 20.25 75 1.67 150 –55 to +150 V A A A A mJ W C/W C C ID (pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 ch-c Tch Tstg Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C R07DS0056EJ0300 Rev.3.00 Jul 23, 2010 Page 1 of 7 H5N2501LD, H5N2501LS, H5N2501LM Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance RDS(on) Min 250 — — 3.0 8 — Typ — — — — 14 0.14 Max — 1 0.1 4.5 — 0.18 Unit V A A V S Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd — — — — — — — — — — 1350 170 50 30 65 95 18 45 8 22 — — — — — — — — — — pF pF pF ns ns ns ns nC nC nC Body-Drain diode forward voltage Body-Drain diode reverse recovery time VDF trr Body-Drain diode reverse recovery charge Qrr — — — 0.9 160 1.0 1.4 — — V ns C Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| Test conditions ID = 10 mA, VGS = 0 VDS = 250 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 9 A, VDS = 10 V Note4 ID = 9 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 9 A VGS = 10 V RL = 13.9 Rg = 10 VDD = 200 V VGS = 10 V ID = 18 A IF = 18 A, VGS = 0 Note4 IF = 18 A, VGS = 0 diF/dt = 100 A/s Notes: 4. Pulse test R07DS0056EJ0300 Rev.3.00 Jul 23, 2010 Page 2 of 7 H5N2501LD, H5N2501LS, H5N2501LM Preliminary Main Characteristics Maximum Safe Operation Area Typical Output Characteristics 50 10 100 PW = 10 10 0 1 Drain Current ID (A) Drain Current ID (A) 1000 μs μs Operation in this area is limited by RDS(on) 0.1 Ta = 25°C 1 shot 0.01 0.1 10 100 8V 40 6.5 V 30 6V 20 VGS = 5.5 V 10 1000 0 4 8 12 16 20 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Typical Transfer Characteristics Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source on State Resistance RDS(on) (Ω) VDS = 10 V Pulse Test 40 30 20 Tc = 75°C 10 25°C −25°C 0 0 2 4 6 8 1 VGS = 10 V Ta = 25°C Pulse Test 0.1 0.01 1 10 10 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature (Typical) Body-Drain Diode Reverse Recovery Time (Typical) 0.5 100 1000 VGS = 10 V Pulse Test 0.4 ID = 18 A 9A 0.3 0.2 5A 0.1 0 −25 Reverse Recovery Time trr (ns) Drain Current ID (A) 10 V 0 1 50 Static Drain to Source on State Resistance RDS(on) (Ω) Ta = 25°C Pulse Test VGS = 10 V Ta = 25°C Pulse Test 100 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 0 25 50 75 Case Temperature R07DS0056EJ0300 Rev.3.00 Jul 23, 2010 100 125 150 Tc (°C) 1 10 100 Reverse Drain Current IDR (A) Page 3 of 7 H5N2501LD, H5N2501LS, H5N2501LM Preliminary Typical Capacitance vs. Drain to Source Voltage Ciss 1000 Coss 100 Crss VGS = 0 f = 1 MHz 10 0 20 60 80 16 VGS 300 12 VDD = 200 V 100 V 50 V VDS 200 100 100 20 40 8 4 VDD = 200 V 100 V 50 V 0 60 80 0 100 Drain to Source Voltage VDS (V) Gate Charge Qg (nC) Reverse Drain Current vs. Source to Drain Voltage (Typical) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 5 VGS = 0 Ta = 25°C 40 Pulse Test Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current IDR (A) ID = 18 A Ta = 25 °C 0 40 50 30 20 10 0 0 400 Gate to Source Voltage VGS (V) Ta = 25°C Drain to Source Voltage VDS (V) Capacitance C (pF) 10000 Dynamic Input Characteristics (Typical) 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0056EJ0300 Rev.3.00 Jul 23, 2010 VDS = 10 V ID = 10 mA 4 1 mA 3 0.1 mA 2 1 0 −25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 4 of 7 H5N2501LD, H5N2501LS, H5N2501LM Preliminary Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 θch – c (t) = γ s (t) • θch – c θch – c = 1.67°C/W, Tc = 25°C 0.1 0.1 0.05 PDM 2 0.03 0.0 1 0 e . 0 uls tp o h 1s 0.01 10 μ 100 μ D= PW T PW T 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit 90% Vout Monitor Vin Monitor 10 Ω Switching Time Waveform D.U.T. Vin Vout Vin 10 V VDD = 125 V 10% 10% 90% td(on) R07DS0056EJ0300 Rev.3.00 Jul 23, 2010 10% RL tr 90% td(off) tf Page 5 of 7 H5N2501LD, H5N2501LS, H5N2501LM Preliminary Package Dimensions H5N2501LD JEITA Package Code ⎯ RENESAS Code PRSS0004AE-A MASS[Typ.] 1.40g Unit: mm 10.2 ± 0.3 8.6 ± 0.3 11.3 ± 0.5 0.3 10.0 +– 0.5 Previous Code LDPAK(L) / LDPAK(L)V 4.44 ± 0.2 (1.4) Package Name LDPAK(L) 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 2.49 ± 0.2 11.0 ± 0.5 0.2 0.86 +– 0.1 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.4 ± 0.1 H5N2501LS JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g 7.8 6.6 (1.5) 10.0 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(1) 2.2 1.37 ± 0.2 2.54 ± 0.5 R07DS0056EJ0300 Rev.3.00 Jul 23, 2010 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 1.3 ± 0.2 Page 6 of 7 H5N2501LD, H5N2501LS, H5N2501LM Preliminary H5N2501LM JEITA Package Code ⎯ RENESAS Code PRSS0004AE-C Previous Code LDPAK(S)-(2) / LDPAK(S)-(2)V MASS[Typ.] 1.35g (1.4) 4.44 ± 0.2 7.8 6.6 (2.3) 2.49 ± 0.2 7.8 7.0 + 0.3 – 0.5 1.3 ± 0.15 10.0 (1.5) 8.6 ± 0.3 10.2 ± 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(2) 0.2 0.1 +– 0.1 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 5.0 +– 0.5 1.3 ± 0.2 Ordering Information Part No. H5N2501LD-E H5N2501LSTL-E H5N2501LMTL-E R07DS0056EJ0300 Rev.3.00 Jul 23, 2010 Quantity 300 pcs 1000 pcs 1000 pcs Shipping Container Box (Tube) Taping Taping Page 7 of 7 Notice 1. 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