MCH3481 Power MOSFET 20V, 104mΩ, 2A, Single N-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.2V drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max 104mΩ@ 4.5V ID Max 147mΩ@ 2.5V 20V 2A 203mΩ@ 1.8V 540mΩ@ 1.2V Typical Applications • Load Switch ELECTRICAL CONNECTION N-Channel SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±9 V Drain Current (DC) ID 2 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP 8 A Power Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) PD 0.8 W Junction Temperature Tj 150 °C PACKING TYPE : TL LOT No. Parameter Symbol Value Unit ORDERING INFORMATION RθJA © Semiconductor Components Industries, LLC, 2015 June 2015 - Rev. 1 FN TL THERMAL RESISTANCE RATINGS Junction to Ambient When mounted on ceramic substrate 2 (900mm × 0.8mm) MARKING LOT No. Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 156.2 1 °C/W See detailed ordering and shipping information on page 5 of this data sheet. Publication Order Number : MCH3481/D MCH3481 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Static Drain to Source On-State Resistance Conditions Value min ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±7.2V, VDS=0V 20 VDS=10V, ID=1mA 0.3 VDS=10V, ID=1A typ max Unit V 1 μA ±10 μA 0.9 V 2.4 S RDS(on)1 RDS(on)2 ID=1A, VGS=4.5V 80 104 mΩ ID=0.5A, VGS=2.5V 105 147 mΩ RDS(on)3 RDS(on)4 ID=0.3A, VGS=1.8V 135 203 mΩ ID=0.1A, VGS=1.2V 270 540 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 175 pF 30 pF Crss 25 pF Turn-ON Delay Time td(on) 6.6 ns Rise Time tr 27 ns Turn-OFF Delay Time td(off) 28 ns Fall Time tf Qg Total Gate Charge Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd VDS=10V, f=1MHz See specified Test Circuit VDS=10V, VGS=4.5V, ID=2A 19 ns 2.9 nC 0.46 nC 0.53 nC VSD Forward Diode Voltage IS=2A, VGS=0V 0.85 1.2 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=1A RL=10Ω VIN D PW=10μs D.C.≤1% VOUT G P.G MCH3481 50Ω S www.onsemi.com 2 MCH3481 www.onsemi.com 3 MCH3481 www.onsemi.com 4 MCH3481 PACKAGE DIMENSIONS unit : mm SC-70FL / MCPH3 CASE 419AQ ISSUE O Recommended Soldering Footprint 0.6 0.4 1 : Gate 2 : Source 2.1 3 : Drain 0.65 0.65 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) FN SC-70FL / MCPH3 (Pb-Free / Halogen Free) 3,000 / Tape & Reel MCH3481-TL-H MCH3481-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH3481 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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