ON NTHD5902T1 Power mosfet dual n−channel chipfet Datasheet

NTHD5902T1
Power MOSFET
Dual N−Channel ChipFETE
2.9 Amps, 30 Volts
Features
• Low RDS(on) for Higher Efficiency
• Miniature ChipFET Surface Mount Package Saves Board Space
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DUAL N−CHANNEL
2.9 AMPS, 30 VOLTS
RDS(on) = 85 mW
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
Rating
Symbol
Steady
State
5 secs
Unit
Drain−Source Voltage
VDS
30
V
Gate−Source Voltage
VGS
"20
V
Continuous Drain Current
(TJ = 150°C) (Note 1)
TA = 25°C
TA = 85°C
ID
Pulsed Drain Current
IDM
Continuous Source Current
(Diode Conduction) (Note 1)
IS
Maximum Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
PD
Operating Junction and Storage
Temperature Range
"2.9
"2.1
1.8
S2
S1
N−Channel MOSFET
N−Channel MOSFET
A
"10
0.9
A
W
2.1
1.1
TJ, Tstg
G2
G1
A
"3.9
"2.8
D2
D1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
1.1
0.6
−55 to +150
ChipFET
CASE 1206A
STYLE 2
°C
1. Surface Mounted on 1″ x 1″ FR4 Board.
MARKING
DIAGRAM
PIN CONNECTIONS
8
1
S1
1
8
D1
7
2
G1
2
7
D2
6
3
S2
3
D2
5
4
G2
4
A6
D1
6
5
A6 = Specific Device Code
ORDERING INFORMATION
© Semiconductor Components Industries, LLC, 2005
February, 2005 − Rev. XXX
1
Device
Package
Shipping
NTHD5902T1
ChipFET
3000/Tape & Reel
Publication Order Number:
NTHD5902T1/D
NTHD5902T1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum Junction−to−Ambient (Note 2)
t v 5 sec
Steady State
RthJA
Maximum Junction−to−Foot
Steady State
RthJF
Typ
Max
50
90
60
110
30
40
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
VGS(th)
VDS = VGS, ID = 250 mA
1.0
−
−
V
Gate−Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
−
−
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V
−
−
1.0
mA
VDS = 24 V, VGS = 0 V,
TJ = 85°C
−
−
5.0
ID(on)
VDS w 5.0 V, VGS = 10 V
10
−
−
A
rDS(on)
( )
VGS = 10 V, ID = 2.9 A
−
0.072
0.085
W
VGS = 4.5 V, ID = 2.2 A
−
0.120
0.143
gfs
VDS = 15 V, ID = 2.9 A
−
20
−
S
VSD
IS = 0.9 A, VGS = 0 V
−
0.8
1.2
V
−
5.0
7.5
nC
−
0.8
−
−
1.0
−
−
7.0
11
−
12
18
−
12
18
−
7.0
11
−
40
80
Static
Gate Threshold Voltage
On−State Drain Current (Note 3)
Drain−Source On−State Resistance (Note 3)
Forward Transconductance (Note 3)
Diode Forward Voltage (Note 3)
Dynamic (Note 4)
Total Gate Charge
Qg
VDS = 15 V
V, VGS = 10 V
V,
ID = 2.9 A
Gate−Source Charge
Qgs
Gate−Drain Charge
Qgd
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
tr
td(off)
Fall Time
tf
Source−Drain Reverse Recovery Time
trr
VDD = 15 V, RL = 15 W
ID ^ 1.0
10A
A, VGEN = 10 V,
V
RG = 6 W
IF = 0.9 A, di/dt = 100 A/ms
2. Surface Mounted on 1″ x 1″ FR4 Board.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Guaranteed by design, not subject to production testing.
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2
ns
NTHD5902T1
TYPICAL ELECTRICAL CHARACTERISTICS
10
10
VGS = 10
thru 5 V
8
6
ID,Drain Current (A)
ID,Drain Current (A)
8
4V
4
2
0
0.5
4
125°C
2
3V
0
6
1.0
1.5
2.0
2.5
VDS, Drain−to−Source Voltage (V)
0
3.0
25°C
0
Figure 1. Output Characteristics
300
0.15
VGS = 4.5 V
0.10
VGS = 10 V
0.05
200
Coss
0
2
4
6
ID, Drain Current (A)
8
10
0
Crss
0
4
8
12
16
VDS, Drain−to−Source Voltage (V)
Figure 3. On−Resistance vs. Drain Current
20
Figure 4. Capacitance
1.8
10
VDS = 15 V
ID = 2.9 A
8
r DS(on),On−Resistance ( Ω )
(Normalized)
VGS,Gate−to−Source Voltage (V)
5
Ciss
100
6
4
2
0
4
400
C, Capacitance (pF)
r DS(on),On−Resistance ( Ω )
1
2
3
VGS, Gate−to−Source Voltage (V)
Figure 2. Transfer Characteristics
0.20
0
TC = −55°C
0
1
2
3
Qg, Total Gate Charge (nC)
4
5
1.6
VGS = 10 V
ID = 2.9 A
1.4
1.2
1.0
0.8
0.6
−50
Figure 5. Gate Charge
−25
0
25
50
75
100
TJ, Junction Temperature (°C)
Figure 6. On−Resistance vs.
Junction Temperature
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3
125
150
NTHD5902T1
TYPICAL ELECTRICAL CHARACTERISTICS
0.20
rDS(on),On−Resistance ( Ω )
I S,Source Current (A)
10
TJ = 150°C
TJ = 25°C
1
0
0.2
0.4
0.6
0.8
1.0
VDS, Drain−to−Source Voltage (V)
0.15
ID = 2.9 A
0.10
0.05
0
1.2
Figure 7. Source−Drain Diode Forward Voltage
10
50
0.2
40
ID = 250 mA
−0.0
Power (W)
V GS (th),Varience (V)
2
4
6
8
VGS, Gate−to−Source Voltage (V)
Figure 8. On−Resistance vs. Gate−to−Source
Voltage
0.4
−0.2
−0.4
30
20
10
−0.6
−0.8
−50
0
−25
0
25
50
75
TJ, Temperature (°C)
100
125
0
10−4
150
Figure 9. Threshold Voltage
10−3
10−2
10 −1
1
Time (sec)
10
Figure 10. Single Pulse Power
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4
100
600
NTHD5902T1
TYPICAL ELECTRICAL CHARACTERISTICS
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
Notes:
PDM
0.2
0.1
t1
0.1
0.02
Single Pulse
0.01
10−4
10−3
t2
t1
1. Duty Cycle, D = t
2
2. Per Unit Base = RthJA = 90°C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
0.05
10−2
10 −1
1
Square Wave Pulse Duration (sec)
10
100
600
Figure 11. Normalized Thermal Transient Impedance, Junction−to−Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10 −1
Square Wave Pulse Duration (sec)
1
Figure 12. Normalized Thermal Transient Impedance, Junction−to−Foot
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5
10
NTHD5902T1
Notes
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6
NTHD5902T1
PACKAGE DIMENSIONS
ChipFET
CASE 1206A−03
ISSUE D
A
8
7
M
6
K
5
S
1
L
5
6
7
8
4
3
2
1
B
2
3
G
4
D
J
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
C
0.05 (0.002)
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7
SOURCE 1
GATE 1
SOURCE 2
GATE 2
DRAIN 2
DRAIN 2
DRAIN 1
DRAIN 1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM
PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN
HORIZONTAL AND VERTICAL SHALL NOT EXCEED
0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE
BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND
BOTTOM LEAD SURFACE.
7. 1206A−01 AND 1206A−02 OBSOLETE. NEW
STANDARD IS 1206A−03.
DIM
A
B
C
D
G
J
K
L
M
S
MILLIMETERS
MIN
MAX
2.95
3.10
1.55
1.70
1.00
1.10
0.25
0.35
0.65 BSC
0.10
0.20
0.28
0.42
0.55 BSC
5 ° NOM
1.80
2.00
INCHES
MIN
MAX
0.116
0.122
0.061
0.067
0.039
0.043
0.010
0.014
0.025 BSC
0.004
0.008
0.011
0.017
0.022 BSC
5 ° NOM
0.072
0.080
NTHD5902T1
ChipFET is a trademark of Vishay Siliconix.
ON Semiconductor is a trademark and
is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right
to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any
and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must
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8
NTHD5902T1/D
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