NTHD5902T1 Power MOSFET Dual N−Channel ChipFETE 2.9 Amps, 30 Volts Features • Low RDS(on) for Higher Efficiency • Miniature ChipFET Surface Mount Package Saves Board Space http://onsemi.com DUAL N−CHANNEL 2.9 AMPS, 30 VOLTS RDS(on) = 85 mW Applications • Power Management in Portable and Battery−Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards Rating Symbol Steady State 5 secs Unit Drain−Source Voltage VDS 30 V Gate−Source Voltage VGS "20 V Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) (Note 1) IS Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C PD Operating Junction and Storage Temperature Range "2.9 "2.1 1.8 S2 S1 N−Channel MOSFET N−Channel MOSFET A "10 0.9 A W 2.1 1.1 TJ, Tstg G2 G1 A "3.9 "2.8 D2 D1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) 1.1 0.6 −55 to +150 ChipFET CASE 1206A STYLE 2 °C 1. Surface Mounted on 1″ x 1″ FR4 Board. MARKING DIAGRAM PIN CONNECTIONS 8 1 S1 1 8 D1 7 2 G1 2 7 D2 6 3 S2 3 D2 5 4 G2 4 A6 D1 6 5 A6 = Specific Device Code ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2005 February, 2005 − Rev. XXX 1 Device Package Shipping NTHD5902T1 ChipFET 3000/Tape & Reel Publication Order Number: NTHD5902T1/D NTHD5902T1 THERMAL CHARACTERISTICS Characteristic Symbol Maximum Junction−to−Ambient (Note 2) t v 5 sec Steady State RthJA Maximum Junction−to−Foot Steady State RthJF Typ Max 50 90 60 110 30 40 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit VGS(th) VDS = VGS, ID = 250 mA 1.0 − − V Gate−Body Leakage IGSS VDS = 0 V, VGS = "20 V − − "100 nA Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V − − 1.0 mA VDS = 24 V, VGS = 0 V, TJ = 85°C − − 5.0 ID(on) VDS w 5.0 V, VGS = 10 V 10 − − A rDS(on) ( ) VGS = 10 V, ID = 2.9 A − 0.072 0.085 W VGS = 4.5 V, ID = 2.2 A − 0.120 0.143 gfs VDS = 15 V, ID = 2.9 A − 20 − S VSD IS = 0.9 A, VGS = 0 V − 0.8 1.2 V − 5.0 7.5 nC − 0.8 − − 1.0 − − 7.0 11 − 12 18 − 12 18 − 7.0 11 − 40 80 Static Gate Threshold Voltage On−State Drain Current (Note 3) Drain−Source On−State Resistance (Note 3) Forward Transconductance (Note 3) Diode Forward Voltage (Note 3) Dynamic (Note 4) Total Gate Charge Qg VDS = 15 V V, VGS = 10 V V, ID = 2.9 A Gate−Source Charge Qgs Gate−Drain Charge Qgd Turn−On Delay Time td(on) Rise Time Turn−Off Delay Time tr td(off) Fall Time tf Source−Drain Reverse Recovery Time trr VDD = 15 V, RL = 15 W ID ^ 1.0 10A A, VGEN = 10 V, V RG = 6 W IF = 0.9 A, di/dt = 100 A/ms 2. Surface Mounted on 1″ x 1″ FR4 Board. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Guaranteed by design, not subject to production testing. http://onsemi.com 2 ns NTHD5902T1 TYPICAL ELECTRICAL CHARACTERISTICS 10 10 VGS = 10 thru 5 V 8 6 ID,Drain Current (A) ID,Drain Current (A) 8 4V 4 2 0 0.5 4 125°C 2 3V 0 6 1.0 1.5 2.0 2.5 VDS, Drain−to−Source Voltage (V) 0 3.0 25°C 0 Figure 1. Output Characteristics 300 0.15 VGS = 4.5 V 0.10 VGS = 10 V 0.05 200 Coss 0 2 4 6 ID, Drain Current (A) 8 10 0 Crss 0 4 8 12 16 VDS, Drain−to−Source Voltage (V) Figure 3. On−Resistance vs. Drain Current 20 Figure 4. Capacitance 1.8 10 VDS = 15 V ID = 2.9 A 8 r DS(on),On−Resistance ( Ω ) (Normalized) VGS,Gate−to−Source Voltage (V) 5 Ciss 100 6 4 2 0 4 400 C, Capacitance (pF) r DS(on),On−Resistance ( Ω ) 1 2 3 VGS, Gate−to−Source Voltage (V) Figure 2. Transfer Characteristics 0.20 0 TC = −55°C 0 1 2 3 Qg, Total Gate Charge (nC) 4 5 1.6 VGS = 10 V ID = 2.9 A 1.4 1.2 1.0 0.8 0.6 −50 Figure 5. Gate Charge −25 0 25 50 75 100 TJ, Junction Temperature (°C) Figure 6. On−Resistance vs. Junction Temperature http://onsemi.com 3 125 150 NTHD5902T1 TYPICAL ELECTRICAL CHARACTERISTICS 0.20 rDS(on),On−Resistance ( Ω ) I S,Source Current (A) 10 TJ = 150°C TJ = 25°C 1 0 0.2 0.4 0.6 0.8 1.0 VDS, Drain−to−Source Voltage (V) 0.15 ID = 2.9 A 0.10 0.05 0 1.2 Figure 7. Source−Drain Diode Forward Voltage 10 50 0.2 40 ID = 250 mA −0.0 Power (W) V GS (th),Varience (V) 2 4 6 8 VGS, Gate−to−Source Voltage (V) Figure 8. On−Resistance vs. Gate−to−Source Voltage 0.4 −0.2 −0.4 30 20 10 −0.6 −0.8 −50 0 −25 0 25 50 75 TJ, Temperature (°C) 100 125 0 10−4 150 Figure 9. Threshold Voltage 10−3 10−2 10 −1 1 Time (sec) 10 Figure 10. Single Pulse Power http://onsemi.com 4 100 600 NTHD5902T1 TYPICAL ELECTRICAL CHARACTERISTICS Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 Notes: PDM 0.2 0.1 t1 0.1 0.02 Single Pulse 0.01 10−4 10−3 t2 t1 1. Duty Cycle, D = t 2 2. Per Unit Base = RthJA = 90°C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 0.05 10−2 10 −1 1 Square Wave Pulse Duration (sec) 10 100 600 Figure 11. Normalized Thermal Transient Impedance, Junction−to−Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10 −1 Square Wave Pulse Duration (sec) 1 Figure 12. Normalized Thermal Transient Impedance, Junction−to−Foot http://onsemi.com 5 10 NTHD5902T1 Notes http://onsemi.com 6 NTHD5902T1 PACKAGE DIMENSIONS ChipFET CASE 1206A−03 ISSUE D A 8 7 M 6 K 5 S 1 L 5 6 7 8 4 3 2 1 B 2 3 G 4 D J STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. C 0.05 (0.002) http://onsemi.com 7 SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. 7. 1206A−01 AND 1206A−02 OBSOLETE. NEW STANDARD IS 1206A−03. DIM A B C D G J K L M S MILLIMETERS MIN MAX 2.95 3.10 1.55 1.70 1.00 1.10 0.25 0.35 0.65 BSC 0.10 0.20 0.28 0.42 0.55 BSC 5 ° NOM 1.80 2.00 INCHES MIN MAX 0.116 0.122 0.061 0.067 0.039 0.043 0.010 0.014 0.025 BSC 0.004 0.008 0.011 0.017 0.022 BSC 5 ° NOM 0.072 0.080 NTHD5902T1 ChipFET is a trademark of Vishay Siliconix. ON Semiconductor is a trademark and is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION JAPAN: ON Semiconductor, Japan Customer Focus Center 4−32−1 Nishi−Gotanda, Shinagawa−ku, Tokyo, Japan 141−0031 Phone: 81−3−5740−2700 Email: [email protected] Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800−282−9855 Toll Free USA/Canada http://onsemi.com 8 NTHD5902T1/D