Freescale Semiconductor Technical Data Gallium Arsenide CATV Amplifier Module MHW9206N LIFETIME BUY Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology • Unconditionally Stable Under All Load Conditions Applications • CATV Systems Operating in the 47 to 870 MHz Frequency Range • Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems • Output Stage Amplifier on Applications Requiring Low Power Dissipation and High Output Performance • Driver Amplifier in Linear General Purpose Applications Description • 24 Vdc Supply, 47 to 870 MHz, CATV GaAs Forward Amplifier Module • Replaced MHW9206. There are no form, fit or function changes with this part replacement. • RoHS Compliant 870 MHz 20.2 dB GAIN 132 - CHANNEL GaAs CATV AMPLIFIER MODULE CASE 1302 - 01, STYLE 1 Table 1. Maximum Ratings Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +70 dBmV DC Supply Voltage VCC +26 Vdc Operating Case Temperature Range TC - 20 to +100 °C Storage Temperature Range Tstg - 40 to +100 °C Input Value Output Value Unit 300 300 V 2 2 kV Table 2. ESD Maximum Ratings Rating Surge Voltage per IEC 1000 - 4 - 5 Human Body Model per Mil. Std. 1686 Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +45°C, 75 Ω system unless otherwise noted) Characteristic Frequency Range Power Gain 870 MHz Slope 47- 870 MHz Gain Flatness (47 - 870 MHz, Peak - to - Valley) Return Loss — Input/Output (Zo = 75 Ohms) Composite Second Order (Vout = +48 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) Min Typ Max Unit BW 47 — 870 MHz Gp 19.6 20.2 20.8 dB S 0.4 0.8 1.4 dB GF — — 0.5 dB 20 19 18 — — — — — — — — — - 66 - 62 - 63 - 63 - 59 - 59 IRL/ORL 47- 500 MHz 501- 750 MHz 751- 870 MHz dB dBc 79- Channel FLAT 112- Channel FLAT 132- Channel FLAT Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Symbol CSO79 CSO112 CSO132 LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08 Document Number: MHW9206N Rev. 4, 3/2006 MHW9206N 1 Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +45°C, 75 Ω system unless otherwise noted) (continued) Composite Triple Beat (Vout = +48 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +44 dBmV/ch., Worst Case) Noise Figure LIFETIME BUY DC Current (VDC = 24 V, TC = 45°C) Symbol Min Typ Max Unit 79- Channel FLAT 112- Channel FLAT 132- Channel FLAT XMD79 XMD112 XMD132 — — — - 55 - 55 - 57 - 51 - 51 - 51 79- Channel FLAT 112- Channel FLAT 132- Channel FLAT CTB79 CTB112 CTB132 — — — - 62 - 60 - 60 - 60 - 57 - 57 NF — — 3.8 4 4.5 4.5 dB IDC 230 245 260 mA dBc dBc 50 MHz 870 MHz LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08 Characteristic Cross Modulation Distortion @ Ch 2 (Vout = +48 dBmV/ch., FM = 55.25 MHz) (Vout = +46 dBmV/ch., FM = 55.25 MHz) (Vout = +44 dBmV/ch., FM = 55.25 MHz) MHW9206N 2 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A S B A Z 0.010 M T F M A M V J F NOTES: 1. DIMENSIONS ARE IN INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. Q 2X R F 2X 6−32UNC−2B L 2X 0.010 U Z T A M M E 1 2 3 5 7 8 9 C N K E 4X 2X 0.010 M Z T A G 7X P D 0.020 Y INCHES MIN MAX −−− 1.775 −−− 1.085 −−− 0.840 0.015 0.021 0.465 0.510 0.300 0.325 0.100 BSC 0.156 BSC 0.315 0.355 1.000 BSC 0.165 BSC 0.100 BSC 0.148 0.168 −−− 0.600 1.500 BSC 0.200 BSC −−− 0.250 0.435 −−− 0.400 BSC 0.152 0.163 0.009 0.011 MILLIMETERS MIN MAX −−− 45.085 −−− 27.559 −−− 21.336 0.381 0.533 11.811 12.954 7.62 8.255 2.540 BSC 3.962 BSC 8.001 9.017 25.400 BSC 4.191 BSC 2.540 BSC 3.759 4.267 −−− 15.24 38.100 BSC 5.080 BSC −−− 6.350 11.049 −−− 10.160 BSC 3.861 4.140 0.229 0.279 Z X T W DIM A B C D E F G J K L N P Q R S U V W X Y Z X M T A M X M STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. RF INPUT GROUND GROUND DELETED VDC DELETED GROUND GROUND RF OUTPUT CASE 1302 - 01 ISSUE E MHW9206N RF Device Data Freescale Semiconductor 3 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2006. All rights reserved. MHW9206N Document Number: MHW9206N 4Rev. 4, 3/2006 RF Device Data Freescale Semiconductor