GTM GM8550 Pnp epitaxial transistor Datasheet

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GM8550
P N P E P I TA X I A L T R A N S I S T O R
Description
The GM8550 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
Package Dimensions
A
Millimeter
Min.
Max.
4.4
4.6
Millimeter
Min.
Max.
3.00 REF.
G
B
4.05
4.25
H
C
1.50
1.70
I
0.40
0.52
D
1.30
1.50
J
1.40
1.60
E
2.40
2.60
K
0.35
F
0.89
1.20
L
5
M
0.70 REF.
1.50 REF.
0.41
TYP.
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Symbol
Ratings
Tj
+150
Unit
Tstg
-55 ~ +150
Collector to Base Voltage
BVCBO
-40
V
Collector to Emitter Voltage
BVCEO
-25
V
Emitter to Base Voltage
BVEBO
-6
V
Collector Current
IC
-1.5
A
Base Current
IB
-0.5
A
Total Power Dissipation
PD
1
W
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
-
V
IC=-100uA
BVCEO
-25
-
-
V
IC=-2mA
BVEBO
-6
-
-
V
IE=-100uA
ICBO
-
-
-100
nA
VCB=-35V
IEBO
-
-
-100
nA
VEB=-6V
VCE(sat)
-
-
-0.5
V
IC=-0.8A, IB=-80mA
-
-
hfe1
45
-
-
hfe2
120
-
500
hfe3
40
-
-
fT
100
-
-
VBE(sat)
VBE(on)
-1.2
V
IC=-0.8A, IB=-80mA
-1
V
VCE=-1V, IC=-10mA
VCE=-1V, IC=-5mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
MHz
Classification Of hFE
Rank
C
D
E
hFE
120 - 200
160 - 300
250 - 500
VCE=-10V, IC=-20mA, f=100MHz
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Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4
FAX :86- 21-38950165
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