CEM7808 Enhancement Mode Field Effect Transistor (2 X N and 2 X P Channel) FEATURES PRELIMINARY P1 S P2 S 30V, 6.2A, RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 60mΩ @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. P1 G P2 G N 1D P1 D N 2D P2 D N 1G N 2G Super high dense cell design for extremely low RDS(ON). N 1S N 2S High power and current handing capability. P1 G Lead-free plating ; RoHS compliant. 8 P1 S P2 S 7 N 2D P2 D 6 2 N 1D P1 D 3 N 1S N 2S P2 G 5 Surface mount Package. SO-8 1 1 N 1G ABSOLUTE MAXIMUM RATINGS 4 N 2G TA = 25 C unless otherwise noted Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 -30 Units V Gate-Source Voltage VGS ±20 ±20 V Parameter ID 6.2 -4.8 A Drain Current-Pulsed a IDM 24.8 -19.2 A Maximum Power Dissipation PD 2.0 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 62.5 C/W Drain Current-Continuous Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2012.Jun http://www.cetsemi.com CEM7808 N-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 30V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS(on) VGS = VDS, ID = 250µA 3 V VGS = 10V, ID = 5A 1 25 33 mΩ VGS = 4.5V, ID = 4A 33 60 mΩ Dynamic Characteristics d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0V, f = 1.0 MHz 530 pF 95 pF 65 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 15V, ID = 1A, VGS = 10V, RGEN =6Ω 10 20 ns 3 6 ns 27 54 ns Turn-Off Fall Time tf 3 6 ns Total Gate Charge Qg 10.6 13.8 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15V, ID =5A, VGS = 10V 1.3 nC 2.4 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage VSD c VGS = 0V, IS = 1.5A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 1.5 A 1.2 V CEM7808 P-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -30V, VGS = 0V -1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Dynamic Characteristics VGS = VDS, ID = -250µA -3 V VGS = -10V, ID = -5A -1 45 55 mΩ VGS = -4.5V, ID = -4A 67 80 mΩ d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -15V, VGS = 0V, f = 1.0 MHz 1235 pF 220 pF 110 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω 11 22 ns 5 10 ns ns 29 58 Turn-Off Fall Time tf 5 10 ns Total Gate Charge Qg 13.0 16.9 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -15V, ID = -5A, VGS = -10V 1.6 nC 3.5 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -1.5A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 3 -1.5 A -1.2 V CEM7808 N-CHANNEL 10 TJ=125 C VGS=10,6,4.5,4V 6.0 VGS=3V 4.5 8 ID, Drain Current (A) ID, Drain Current (A) 7.5 3.0 1.5 6 4 25 C 2 -55 C 0 0.0 0.5 1.0 1.5 0 2.0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 450 300 Coss 150 Crss 0 3 6 9 12 15 5 6 2.2 1.9 ID=5A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 4 Figure 2. Transfer Characteristics Ciss 1.1 1.0 0.9 0.8 0.7 0.6 -50 3 Figure 1. Output Characteristics 600 1.2 2 VGS, Gate-to-Source Voltage (V) 750 1.3 1 VDS, Drain-to-Source Voltage (V) 900 0 0 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 4 CEM7808 P-CHANNEL 6.0 10 TJ=125 C 4.8 -ID, Drain Current (A) -ID, Drain Current (A) -VGS=10,8,6,4V 3.6 2.4 -VGS=3V 1.2 0 0 0.3 0.6 0.9 1.2 1.5 1.8 0 1 -55 C 2 3 4 5 6 Figure 8. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 750 500 Coss 250 Crss 0 5 10 15 20 25 2.2 1.9 ID=-5A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 25 C Figure 7. Output Characteristics Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 2 -VGS, Gate-to-Source Voltage (V) 1000 1.2 4 -VDS, Drain-to-Source Voltage (V) 1250 1.3 6 0 1500 0 8 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 5 CEM7808 10 10 V =15V DS ID=5A 8 6 4 2 0 0 2 4 6 8 1ms 100ms 10 0 10 -1 1s DC TA=25 C TJ=150 C Single Pulse -2 -2 10 -1 10 0 10 1 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 13. Gate Charge Figure 14. Maximum Safe Operating Area 6 4 2 3.5 10 2 10 1 10 0 10 -1 10 2 RDS(ON)Limit 8 -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) 1 10 10 V =-15V DS ID=-5A 0 10 10 10 P-CHANNEL 0 2 RDS(ON)Limit ID, Drain Current (A) VGS, Gate to Source Voltage (V) N-CHANNEL 7.0 10.5 10 14.0 10ms 100ms 1s DC -2 10 TA=25 C TJ=150 C Single Pulse -2 10 -1 10 0 10 1 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 15. Gate Charge Figure 16. Maximum Safe Operating Area 6 10 2 CEM7808 VDD t on V IN RL D td(off) tf 90% 90% VOUT VGS RGEN toff tr td(on) VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 18. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 17. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 0.02 10 Single Pulse -2 10 -4 10 -3 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 7 10 1 10 2