SavantIC Semiconductor Product Specification MJ21193 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type MJ21194 ·Excellent gain linearity APPLICATIONS ·Designed for high power audio output,disk head positioners and linear applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter -400 V VCEO Collector-emitter voltage Open base -250 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -16 A ICM Collector current-peak -30 A IB Base current -5 A PD Total power dissipation 250 W Tj Junction temperature -65~200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 0.7 UNIT /W SavantIC Semiconductor Product Specification MJ21193 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-100mA ;IB=0 VCE(sat)-1 Collector-emitter saturation voltage IC=-8A; IB=-0.8A -1.4 V VCE(sat)-2 Collector-emitter saturation voltage IC=-16A; IB=-3.2A -4.0 V VBE(ON) Base-emitter on voltage IC=-8A ; VCE=-5V -2.2 V ICEX Collector cut-off current VCE=-250V; VBE(off)=-1.5V -100 µA ICEO Collector cut-off current VCE=-200V; IB=0 -100 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 µA hFE-1 DC current gain IC=-8A ; VCE=-5V 25 hFE-2 DC current gain IC=-16A ; VCE=-5V 8 Transition frequency IC=-1A ; VCE=-10V,f=1MHz 4 COB Collector output capacitance f=1MHz;VCB=-10V,IE=0 Is/b Second breakdown current with base forward biased VCE=-50V;t=1s(non-repetitive) VCE=-80V;t=1s(non-repetitive) fT CONDITIONS 2 MIN TYP. MAX -250 V 75 MHz 500 -5.0 -2.5 UNIT pF A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 MJ21193