BUV48, BUV48A NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability AUGUST 1978 - REVISED MARCH 1997 SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-emitter voltage (V BE = 0 V) Collector-emitter voltage (RBE = 10 Ω) Collector-emitter voltage (IB = 0) SYMBOL BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A Continuous collector current Peak collector current (see Note 1) Continuous base current VCES VCER VCEO VALUE 850 1000 850 1000 400 450 UNIT V V V IC 15 ICM 30 A A IB 4 A A IBM 20 Non repetitive accidental peak surge current ICSM 55 A Continuous device dissipation at (or below) 25°C case temperature Ptot 125 W Tj -65 to +150 °C Tstg -65 to +150 °C Peak base current Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BUV48, BUV48A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V CEO(sus) ICES ICER IEBO VEBO VCE(sat) V BE(sat) ft Cob TEST CONDITIONS Collector-emitter sustaining voltage IC = 200 mA L = 25 mH MIN (see Note 2) BUV48 400 BUV48A 450 TYP MAX V VCE = 850 V VBE = 0 BUV48 0.2 Collector-emitter V CE = 1000 V VBE = 0 BUV48A 0.2 cut-off current V CE = 850 V VBE = 0 TC = 125°C BUV48 2.0 V CE = 1000 V VBE = 0 TC = 125°C BUV48A 2.0 VCE = 850 V RBE = 10 Ω BUV48 0.5 Collector-emitter V CE = 1000 V RBE = 10 Ω BUV48A 0.5 cut-off current V CE = 850 V RBE = 10 Ω TC = 125°C BUV48 4.0 V CE = 1000 V RBE = 10 Ω TC = 125°C BUV48A 4.0 VEB = 5V IC = 0 IE = 50 mA IC = 0 Emitter cut-off current Emitter-base breakdown voltage 7 mA mA 1 mA 30 V IB = 2A IC = 10 A BUV48 1.5 Collector-emitter IB = 3A IC = 15 A BUV48 5.0 saturation voltage IB = 1.6 A IC = 8A BUV48A 1.5 (see Notes 3 and 4) UNIT V IB = 2.4 A IC = 12 A BUV48A 5.0 Base-emitter IB = 2A IC = 10 A BUV48 1.6 saturation voltage IB = 1.6 A IC = 8A BUV48A 1.6 VCE = 10 V IC = 0.5 A f = 1 MHz 10 MHz VCB = 20 V IC = 0 f = 1 MHz 150 pF Current gain bandwidth product Output capacitance (see Notes 3 and 4) V NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 1 °C/W MAX UNIT 1.0 µs 3.0 µs resistive-load-switching characteristics at 25°C case temperature PARAMETER † ton Turn on time ts Storage time tf Fall time ton Turn on time ts Storage time tf Fall time TEST CONDITIONS † MIN IC = 10 A VCC = 150 V BUV48 IB(on) = 2 A IB(off) = -2 A (see Figures 1 and 2) IC = 8 A VCC = 150 V BUV48A IB(on) = 1.6 A IB(off) = -1.6 A (see Figures 1 and 2) TYP 0.8 µs 1.0 µs 3.0 µs 0.8 µs MAX UNIT 4.0 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. inductive-load-switching characteristics at 100°C case temperature PARAMETER † tsv Voltage storage time IC = 10 A IB(on) = 2 A tfi Current fall time V BE(off) = -5 V (see Figures 3 and 4) tsv Voltage storage time IC = 8 A IB(on) = 1.6 A tfi Current fall time V BE(off) = -5 V (see Figures 3 and 4) PRODUCT 2 TEST CONDITIONS INFORMATION MIN BUV48 BUV48A TYP 0.4 µs 4.0 µs 0.4 µs BUV48, BUV48A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION +25 V BD135 680 µ F 120 Ω T V1 100 Ω 100 µ F 47 Ω tp V cc V=CC250 V TUT 15 Ω V1 100 Ω 680 µ F 82 Ω BD136 tp = 20 µs Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Ω Figure 1. Resistive-Load Switching Test Circuit C 90% 90% E IC A - B = td B - C = tr B E - F = tf 10% 10% F 0% D - E = ts A - C = ton D - F = toff 90% D dIB ≥ 2 A/µs dt IB I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms PRODUCT INFORMATION 3 BUV48, BUV48A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 33 Ω BY205-400 RB (on) 1 pF V Gen 180 µ H 2N2222 1 kΩ 68 Ω 0.02 µ F vcc BY205-400 Vclamp = 400 V TUT 1 kΩ +5V 270 Ω BY205-400 5X BY205-400 1 kΩ 2N2904 Adjust pw to obtain IC D44H11 47 Ω For IC < 6 A VCC = 50 V For IC ≥ 6 A VCC = 100 V V 100 Ω BE(off) Figure 3. Inductive-Load Switching Test Circuit I B(on) A (90%) IB A - B = tsv Base Current B - C = trv D - E = tfi E - F = tti C B - E = txo V CE B 90% 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF. B. Resistors must be noninductive types. Figure 4. Inductive-Load Switching Waveforms PRODUCT 4 INFORMATION BUV48, BUV48A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCP765AA 100 TC = 125°C TC = 25°C TC = -65°C VCE = 5 V hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 10 1·0 0·1 1·0 10 TCP765AB 5·0 IC = 5 A IC = 10 A IC = 15 A 4·0 TC = 25°C 3·0 2·0 1·0 0 0·1 20 1·0 IC - Collector Current - A IB - Base Current - A Figure 5. Figure 6. 4·0 BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT TCP765AI IC = 5 A IC = 10 A IC = 15 A TC = 100°C 3·0 2·0 1·0 0 0·1 1·5 IC = 15 A 1·4 1·3 IC = 10 A 1·2 1·1 1·0 IC = 5 A 0·9 0·8 1·0 IB - Base Current - A Figure 7. PRODUCT TCP765AC 1·6 VBE(sat) - Base-Emitter Saturation Voltage - V VCE(sat) - Collector-Emitter Saturation Voltage - V COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 5·0 10 10 0 1 2 3 4 5 6 IB - Base Current - A Figure 8. INFORMATION 5 BUV48, BUV48A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE TCP765AD ICES - Collector Cut-off Current - µA 4·0 1·0 BUV48A VCE = 1000 V 0·1 BUV48 VCE = 850 V 0·01 -80 -60 -40 -20 0 20 40 60 80 100 120 140 TC - Case Temperature - °C Figure 9. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 10 1·0 0.1 0·01 1·0 tp = 10 µ s tp = 50 µ s tp = 100 µ s tp = 500 µ s tp = 1 ms tp = 2 ms DC Operation BUV48 BUV48A 10 100 VCE - Collector-Emitter Voltage - V Figure 10. PRODUCT 6 SAP765AA INFORMATION 1000 BUV48, BUV48A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 15,2 14,7 4,1 4,0 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 2 3 1,30 0,78 0,50 1,10 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. PRODUCT MDXXAW INFORMATION 7 BUV48, BUV48A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT 8 INFORMATION