Isahaya INC6008AP1 For low frequency amplify application silicon npn epitaxial type Datasheet

<SMALL-SIGNAL TRANSISTOR>
PRELIMINARY
INC6008AP1
Notice:This is not a final specification
Some parametric are subject to change.
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
UNIT:mm
4.6 MAX
1.6
INC6008AP1 is a silicon NPN transistor.
It is designed with high voltage.
1.5
0.8 MIN
・High collector current
C
E
・High voltage VCEO = 140V
Ic=1A
・Low voltage VCE(sat) = 0.7V(MAX)
B
2.5
・Small package for easy mounting.
4.2 MAX
FEATURE
0.53
MAX
0.4
0.48 MAX
1.5
3.0
APPLICATION
マーキング
MARKING
Relay drive, Power supply
TERMINAL
CONNECTOR
電極接続
E:EMITTER
E: エミッタ
JEITA:SC-62
EIAJ
: SC-62
JEDEC:SOT-89
JEDEC :
C: コレクタ
C:COLLECTOR
B: ベース
B:BASE
JEDEC:―
MAXIMUM RATING(Ta=25℃)
SYMBOL
VCBO
PARAMETER
Collector to Base voltage
VEBO
Emitter to Base voltage
VCEO
Collector to Emitter voltage
I
Collector current
C
RATING
UNIT
160
V
5
V
140
V
1
A
PC
Collector dissipation(Ta=25℃)
500
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
MARKING
Type Name
B H
W
LOT №
hFE ITEM
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
LIMITS
TYP
MAX
UNIT
V(BR)CBO
C to B break down voltage
I C=100μA,I E=0mA
160
-
-
V
V(BR)EBO
E to B break down voltage
I E=100μA,I C=0mA
5
-
-
V
V(BR)CEO
C to E break down voltage
I C=10mA,RBE=∞
140
-
-
V
ICBO
Collector cut off current
VCB=140V,I E =0mA
-
-
100
nA
IEBO
Emitter cut off current
VEB=4V,I C=0mA
-
-
100
nA
hFE1
DC forward current gain1
VCE=10V,I C=150mA
100
-
300
-
hFE2
DC forward current gain2
VCE=10V,I C=1A
-
10
-
-
VCE(sat)
C to E saturation voltage
I C=150mA,I B=15mA
-
-
0.7
V
VBE(sat)
B to E saturation voltage
I C=150mA,I B=15mA
-
-
1.1
V
fT
Gain bandwidth product
VCE=10V,I E=-50mA
100
-
-
MHz
Cob
Collector output capacitance
VCB=10V,I E=0mA,f=1MHz
-
-
15
pF
ISAHAYA ELECTRONICS CORPORATION
<SMALL-SIGNAL TRANSISTOR>
PRELIMINARY
INC6008AP1
Notice:This is not a final specification
Some parametric are subject to change.
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
TYPICAL CHARACTERISTICS(Ta=25℃)
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
COMMON EMITTER TRANSFER
1000
VCE=10V
VCE=10V
COLLECTOR CURRENT IC(mA)
DC FORWARD CURRENT GAIN hFE (-)
1000
100
10
0.01
100
10
1
0.1
0.01
0.1
1
10
100
COLLECTOR CURRENT IC(mA)
0
1000
300
600
900
1200
BASE TO EMITTER VOLTAGE VBE(V)
BASE TO EMITTERSATURATION VOLTAGE
VS. COLLECTOR CURRE
10000
IC/IB=10
1000
100
10
1
0.1
10
BASE TO EMITTERSATURATION VOLTAGE
VBE(sat)(V)
COLLECTOR TO EMITTERSATURATION VOLTAGE
VCE(sat)(mV)
COLLECTOR TO EMITTERSATURATION
VOLTAGE VS. COLLECTOR CURRENT
1
10
100
COLLECTOR CURRENT IC(mA)
IC/IB=10
1
0.1
1000
0.1
GAIN BAND WIDTH PRODUCT fT(MHZ)
1000
VCE=10V
100
10
1
1
10
EMITTER CURRENT IE(mA)
1
10
100
COLLECTOR CURRENT IC(mA)
1000
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
100
COLLECTOR OUTPUT CAPACITANCE Cob(pF)
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
0.1
1500
100
f=1MHz
10
1
0.1
1
10
COLLECTOR TO BASE VOLTAGE VCB(V)
ISAHAYA ELECTRONICS CORPORATION
100
<SMALL-SIGNAL TRANSISTOR>
PRELIMINARY
INC6008AP1
Notice:This is not a final specification
Some parametric are subject to change.
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
COLLECTOR DISSIPATION-AMBIENT TEMPERATURE
1000
0.6
f=1MHz
COLLECTOR DISSIPATION Pc(W)
EMITTER INTPUT CAPACITANCE Cib(pF)
EMITTER INPUT CAPACITANCE
VS. BASE TO EMITTER VOLTAGE
100
10
1
0.5
0.4
0.3
0.2
0.1
0
0.1
1
EMITTER TO BASE VOLTAGE VEB(V)
10
0
20
40
60
80
100
120
AMBIENT TEMPERATURE Ta(℃)
ISAHAYA ELECTRONICS CORPORATION
140
160
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Mar.2013
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