<SMALL-SIGNAL TRANSISTOR> PRELIMINARY INC6008AP1 Notice：This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT：ｍｍ 4.6 MAX 1.6 INC6008AP1 is a silicon NPN transistor. It is designed with high voltage. 1.5 0.8 MIN ・High collector current C E ・High voltage VCEO = 140V Ic=1A ・Low voltage VCE(sat) = 0.7V(MAX) B 2.5 ・Small package for easy mounting. 4.2 MAX FEATURE 0.53 MAX 0.4 0.48 MAX 1.5 3.0 APPLICATION マーキング MARKING Relay drive, Power supply TERMINAL CONNECTOR 電極接続 E：EMITTER Ｅ: エミッタ JEITA:SC-62 EIAJ : SC-62 JEDEC:SOT-89 JEDEC : Ｃ: コレクタ C：COLLECTOR Ｂ: ベース B：BASE JEDEC：― MAXIMUM RATING（Ta=25℃） SYMBOL VCBO PARAMETER Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage I Collector current C RATING UNIT 160 V 5 V 140 V 1 A PC Collector dissipation(Ta=25℃) 500 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55～＋150 ℃ MARKING Type Name B H W LOT № hFE ITEM ELECTRICAL CHARACTERISTICS（Ta=25℃） SYMBOL PARAMETER TEST CONDITIONS MIN LIMITS TYP MAX UNIT V(BR)CBO C to B break down voltage I C=100μA，I E=0mA 160 - - V V(BR)EBO E to B break down voltage I E=100μA，I C=0mA 5 - - V V(BR)CEO C to E break down voltage I C=10mA，RBE=∞ 140 - - V ICBO Collector cut off current VCB=140V，I E =0mA - - 100 nA IEBO Emitter cut off current VEB=4V，I C=0mA - - 100 nA ｈＦＥ1 DC forward current gain1 VCE=10V，I C=150mA 100 - 300 - ｈＦＥ2 DC forward current gain2 VCE=10V，I C=1A - 10 - - VCE(sat) C to E saturation voltage I C=150mA，I B=15mA - - 0.7 V VBE(sat) B to E saturation voltage I C=150mA，I B=15mA - - 1.1 V fT Gain bandwidth product VCE=10V，I E=-50mA 100 - - MHz Cob Collector output capacitance VCB=10V，I E=0mA，f=1MHz - - 15 pF ISAHAYA ELECTRONICS CORPORATION <SMALL-SIGNAL TRANSISTOR> PRELIMINARY INC6008AP1 Notice：This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE TYPICAL CHARACTERISTICS（Ta=25℃） DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT COMMON EMITTER TRANSFER 1000 VCE=10V VCE=10V COLLECTOR CURRENT IC(mA) DC FORWARD CURRENT GAIN hFE (-) 1000 100 10 0.01 100 10 1 0.1 0.01 0.1 1 10 100 COLLECTOR CURRENT IC(mA) 0 1000 300 600 900 1200 BASE TO EMITTER VOLTAGE VBE(V) BASE TO EMITTERSATURATION VOLTAGE VS. COLLECTOR CURRE 10000 IC/IB=10 1000 100 10 1 0.1 10 BASE TO EMITTERSATURATION VOLTAGE VBE(sat)(V) COLLECTOR TO EMITTERSATURATION VOLTAGE VCE(sat)(mV) COLLECTOR TO EMITTERSATURATION VOLTAGE VS. COLLECTOR CURRENT 1 10 100 COLLECTOR CURRENT IC(mA) IC/IB=10 1 0.1 1000 0.1 GAIN BAND WIDTH PRODUCT fT(MHZ) 1000 VCE=10V 100 10 1 1 10 EMITTER CURRENT IE(mA) 1 10 100 COLLECTOR CURRENT IC(mA) 1000 COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 0.1 1500 100 f=1MHz 10 1 0.1 1 10 COLLECTOR TO BASE VOLTAGE VCB(V) ISAHAYA ELECTRONICS CORPORATION 100 <SMALL-SIGNAL TRANSISTOR> PRELIMINARY INC6008AP1 Notice：This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE COLLECTOR DISSIPATION-AMBIENT TEMPERATURE 1000 0.6 f=1MHz COLLECTOR DISSIPATION Pc(W) EMITTER INTPUT CAPACITANCE Cib(pF) EMITTER INPUT CAPACITANCE VS. BASE TO EMITTER VOLTAGE 100 10 1 0.5 0.4 0.3 0.2 0.1 0 0.1 1 EMITTER TO BASE VOLTAGE VEB(V) 10 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta(℃) ISAHAYA ELECTRONICS CORPORATION 140 160 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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