MOSFET SMD Type N-Channel MOSFET AO4402 (KO4402) SOP-8 ■ Features ● VDS (V) = 20V ● ID = 20 A (VGS = 4.5V) ● RDS(ON) ＜ 5.5mΩ (VGS = 4.5V) 1.50 0.15 0.21 -0.02 +0.04 ● RDS(ON) ＜ 7mΩ (VGS = 2.5V) 1 2 3 4 D Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Avalanche Current Avalanche energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State ID 140 IAS,IAR 57 EAS,EAR 162 RthJA V 20 16 IDM PD Unit 3.1 2 A mJ W 40 75 RthJL 24 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO4402 (KO4402) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions ID=250 uA, VGS=0V Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±12V Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA Static Drain-Source On-Resistance RDS(On) Min Typ 20 VDS=20V, VGS=0V 1 VDS=20V, VGS=0V, TJ=55℃ 5 VGS=4.5V, ID=20A 0.5 Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD Marking 2 4402 KC**** www.kexin.com.cn nA 1.6 V VGS=10V, VDS=5V 140 VDS=5V, ID=20A VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=10V, ID=20A mΩ 7 A 105 S 3080 4630 520 960 350 810 0.6 2.1 28 43 7 11 7 17 pF Ω nC 7 8 VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω ns 70 18 IF= 20A, dI/dt= 500A/us 13 20 29 43 nC 4 A 1 V IS=1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. ■ Marking ±100 7 TJ=125℃ tf Body Diode Reverse Recovery Charge uA 5.5 VGS=2.5V, ID=18A ID(ON) Unit V VGS=4.5V, ID=20A On State Drain Current Max MOSFET SMD Type N-Channel MOSFET AO4402 (KO4402) ■ Typical Characterisitics 100 80 VDS=5V 80 60 ID(A) ID (A) 60 40 40 125°C 20 0 0 0 1 2 3 4 0.5 5 10 1.5 2 2.5 Normalized On-Resistance 1.4 8 VGS=2.5V RDS(ON) (mΩ ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 4 VGS=4.5V 2 1.2 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 1.0E+02 10 ID=20A 9 1.0E+01 1.0E+00 8 7 IS (A) RDS(ON) (mΩ ) 25°C 20 125°C 6 1.0E-01 1.0E-02 1.0E-03 5 4 1.0E-04 25°C 1.0E-05 3 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO4402 (KO4402) ■ Typical Characterisitics 7000 10 Capacitance (pF) 8 VGS (Volts) 6000 VDS=10V ID=20A 6 4 2 5000 4000 3000 2000 Coss 1000 Crss 0 0 0 0 20 40 60 80 Qg (nC) Figure 7: Gate-Charge Characteristics 100 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 1000.0 100.0 ID (Amps) IAR (A) Peak Avalanche Current 5 100.0 10.0 1.0 10ms 0.1 0.0 10.0 0.01 1 10 100 1000 µs) Time in avalanche, tA (µ . Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 10 100 VDS (Volts) 10000 TA=25°C Power (W) 1000 100 10 1 0 .0 0 0 0 1 0 .0 0 1 0 .1 10 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4 www.kexin.com.cn 1000 MOSFET SMD Type N-Channel MOSFET AO4402 (KO4402) ■ Typical Characterisitics Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) www.kexin.com.cn 5