Diodes SMD Type Schottky Diodes BAT64-04/05/06 (KAT64-04/05/06) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● For low-loss, fast-recovery, meter protection, 0.4 3 ■ Features 1 ● Integrated diffused guard ring 0.55 bias isolation and clamping applications 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.05 0.1 -0.01 0-0.1 BAT64 BAT64-04 +0.1 0.38 -0.1 +0.1 0.97 -0.1 ● Low forward voltage BAT64-06 BAT64-05 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating VRM 40 DC Reverse Voltage VR 40 Forward Current IF 250 IFSM 800 Peak Reverse Voltage Non-repetitive Peak forward surge current @t=8.3ms mA PD 250 mW 400 ℃/W TJ 125 Tstg -55 to 150 Junction Temperature Storage Temperature range V RθJA Power Dissipation Thermal Resistance Junction to Ambient Unit ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Reverse breakdown voltage VR Forward voltage VF Test Conditions IR= 100 uA Min Typ Max 40 V IF= 1 mA 350 IF= 10 mA 430 IF= 30 mA 520 IF= 100 mA 750 Reverse voltage leakage current IR VR=25 V Capacitance between terminals CT VR= 1 V, f= 1 MHz Unit 2 6 mV uA pF ■ Marking Type BAT64 BAT64-04 BAT64-05 BAT64-06 Marking 63S 64S 65S 66S www.kexin.com.cn 1 Diodes SMD Type Schottky Diodes BAT64-04/05/06 (KAT64-04/05/06) ■ Typical Characterisitics Forward Characteristics (uA) (mA) IF REVERSE CURRENT IR 100 FORWARD CURRENT Reverse 1000 800 T a =100 ℃ T a =25 ℃ 10 Characteristics T a =100 ℃ 100 10 T a =25 ℃ 1 1 0.0 0.1 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 1.2 0 20 30 REVERSE VOLTAGE (V) Capacitance Characteristics 20 10 VR 40 (V) Power Derating Curve 300 T a =25 ℃ (mW) PD 15 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 10 200 150 100 5 50 0 0 0 8 16 24 REVERSE VOLTAGE 2 250 www.kexin.com.cn 32 VR (V) 40 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃) 125