LRC LMDL301T1G Silicon hotâ carrier diodes schottky barrier diode Datasheet

LESHAN RADIO COMPANY, LTD.
Silicon Hot–Carrier Diodes
Schottky Barrier Diode
LMDL301T1G
These devices are designed primarily for high–efficiency UHF and VHF
detector applications. They are readily adaptable to many other fast switching
RF and digital applications. They are supplied in an inexpensive plastic package
for low–cost, high–volume consumer and industrial/commercial requirements.
They are available in a Surface Mount package.
• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.5 pF (Max) @ V R = 15 V
• Low Reverse Leakage – I R = 13 nAdc (Typ)
• Device Marking: 4T
30 VOLTS SILICON
HOT–CARRIER DETECTOR
AND SWITCHING DIODES
1
• We declare that the material of product
compliance with RoHS requirements.
2
1
CATHODE
PLASTIC SOD– 323
CASE 477
2
ANODE
MAXIMUM RATINGS ( T J =125°C unless otherwise noted )
Symbol
VR
Rating
Reverse Voltage
Value
30
Unit
Volts
Max
200
Unit
mW
1.57
635
mW/°C
°C/W
–55 to+150
°C
THERMAL CHARACTERISTICS
Symbol
PD
R θJA
T J , T stg
Characteristic
Total Device Dissipation FR–5 Board,*
T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
*FR–5 Minimum Pad
ORDERING INFORMATION
Device
LMDL301T1G
LMDL301T3G
Marking
4T
Shipping
3000 / Tape & Reel
4T
10000 / Tape & Reel
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I R = 10 µA)
Diode Capacitance
(V R = 15 V, f = 1.0MHz) Figure 1
Reverse Leakage
(V R = 25 V) Figure 3
Forward Voltage
(I F = 1.0 mAdc) Figure 4
Forward Voltage
(I F = 10 mAdc) Figure 4
Symbol
Min
Typ
Max
Unit
V (BR)R
30
—
—
Volts
—
0.9
1.5
—
13
200
CT
IR
V
F
—
0.38
0.45
V
F
—
0.52
0.6
pF
nAdc
Vdc
Vdc
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LMDL301T1G
TYPICAL ELECTRICAL CHARACTERISTICS
τ, MINORITY CARRIER LIFETIME (ps)
C T , TOTAL CAPACITANCE (pF)
2.8
f = 1.0 MHz
2.4
2.0
1.6
1.2
0.8
0.4
0
0
3.0
6.0
9.0
12
15
18
21
24
27
500
400
KRAKAUER METHOD
300
200
100
10
20
30
40
50
60
70
80
90
V R , REVERSE VOLTAGE (VOLTS)
I F , FORWARD CURRENT (mA)
Figure 1. Total Capacitance
Figure 2. Minority Carrier Lifetime
100
100
I F , FORWARD CURRENT (mA)
10
I R , REVERSE LEAKAGE (µA)
0
0
30
T A = 100°C
1.0
75°C
0.1
25°C
0.01
6.0
12
18
24
T A = 85°C
30
T A = –40°C
1.0
T A = 25°C
0.1
0.2
0.001
0
10
0.4
0.6
0.8
1.0
V R , REVERSE VOLTAGE (VOLTS)
V F , FORWARD VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
Figure 4. Forward Voltage
I F(PEAK)
1.2
CAPACITIVE
CONDUCTION
I R(PEAK)
FORWARD
CONDUCTION
SINUSOIDAL
GENERATOR
STORAGE
CONDUCTION
SAMPLING
BALLAST
PADS
NETWORK
(PADS)
OSCILLOSCOPE
(50 Ω INPUT)
DUT
Figure 5. Krakauer Method of Measuring Lifetime
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LMDL301T1G
PACKAGE DIMENSIONS
SOD–323
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
HE
D
b
1
2
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
NOTE 3
L
NOTE 5
A1
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
Rev.O 3/3
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