SEME BUL68A LAB MECHANICAL DATA Dimensions in mm 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) 0.84 (0.033) 0.94 (0.037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 1.09 (0.043) 1.30 (0.051) Designed for use in electronic ballast applications 5.97 (0.235) 6.22 (0.245) 1 2 3 • • • • 0.76 (0.030) 1.14 (0.045) 8.89 (0.350) 9.78 (0.385) 0.64 (0.025) 0.89 (0.035) 2.31 (0.091) Typ. 2.31 (0.091) Typ. 4.60 (0.181) Typ. 0.46 (0.018) 0.61 (0.024) FEATURES 1.04 (0.041) 1.14 (0.045) • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. I-PAK(TO251) Pin 1 – Base SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING Pin 2 – Collector Pin 3 – Emitter • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage(IE=0) 350V VCEO Collector – Emitter Voltage (IB = 0) 160V VEBO Emitter – Base Voltage (IC = 0) 10V IC Continuous Collector Current 7A IC(PK) Peak Collector Current 12A IB Base Current 3A Ptot Total Dissipation at Tcase = 25°C Tstg Operating and Storage Temperature Range Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 20W –55 to +150°C Prelim. 2/97 SEME BUL68A LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. VCEO(sus) ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 10mA 160 V(BR)CBO Collector – Base Breakdown Voltage IC = 1mA 350 V(BR)EBO Emitter – Base Breakdown Voltage IE = 1mA 10 ICBO Collector – Base Cut–Off Current ICEO Collector – Emitter Cut–Off Current IEBO Emitter Cut–Off Current hFE* DC Current Gain Typ. Unit V VCB = 350V IB = 0 Max. 10 TC = 125°C 100 VCE = 150V 100 VEB = 9V 10 IC = 0 TC = 125°C IC = 0.3A VCE = 4V 30 90 IC = 2A VCE = 4V 25 60 IC = 4A VCE = 1V 8 100 µA µA µA — TC = 125°C VCE(sat)* IC = 1A IB = 0.1A 0.1 0.2 Collector – Emitter Saturation Voltage IC = 3A IB = 0.3A 0.3 0.6 IC = 4A IB = 0.4A 1 1.5 IC = 3A IB = 0.3A 1.1 IC = 4A IB = 0.4A 1.4 V VBE(sat)* Base – Emitter Saturation Voltage ft DYNAMIC CHARACTERISTICS Transition Frequency IC = 0.2A VCE = 4V 20 MHz Cob Output Capacitance VCB = 10V f = 1MHz 30 pF V * Pulse test tp = 300µs , δ < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 2/97