MOSFET SMD Type N-Channel MOSFET BSS138 (KSS138) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 1 ● RDS(ON) ＜ 3.5Ω (VGS = 10V) 0.55 ● ID = 200 mA (VGS = 10V) +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● VDS (V) = 50V 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 ● Fast Switching Speed +0.05 0.1 -0.01 +0.1 0.97 -0.1 ● Low On-Resistance 1. Gate 0-0.1 +0.1 0.38 -0.1 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 50 Drain-Gate Voltage RGS≤ 20KΩ VDG 50 Gate-Source Voltage VGS ±20 ID 200 Continuous Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Unit V mA PD 300 mW RthJA 417 ℃/W TJ 150 Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=50V, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA Static Drain-Source On-Resistance RDS(On) VGS=10V, ID=220mA Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On DelayTime td(on) Turn-Off DelayTime td(off) VDS=25V, ID=0.2A,f=1KHz Min Typ Max 50 0.5 Unit V 0.5 μA ±100 nA 1.5 V 3.5 Ω 100 mS 50 VGS=0V, VDS=10V, f=1MHz 25 pF 8 VDS=30V, ID=0.2A,RG=50Ω 20 20 ns ■ Marking Marking K38** www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET BSS138 (KSS138) RDS(ON), NORMALIZED DRAIN-SOURCE ON RESISTANCE (W) ■ Typical Characterisitics 0.6 V GS = 3.5V T j = 25° C 0.5 ID , DRAIN-SOURCE CURRENT (A) V GS = 3.25V 0.4 V GS = 3.0V 0.3 V GS = 2.75V 0.2 V GS = 2.5V 0.1 0 0 2 1 3 5 4 6 7 8 10 9 2.45 2.25 2.05 1.65 1.45 1.05 0.85 0.65 -55 95 45 -5 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature 2 V DS = 1V VGS(th), GATE THRESHOLD VOLTAGE (V) 0.8 ID , DRAIN-SOURCE CURRENT (A) V GS = 4.5V ID = 0.075A 1.25 V DS , DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Volta ge 0.7 V GS = 10V ID = 0.5A 1.85 -55° C 0.6 25 ° C 0.5 150 ° C 0.4 0.3 0.2 0.1 1.8 1.6 ID = 1.0mA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 -55 -40 -25 -10 5 0 0.5 1.5 1 2 2.5 3.5 3 4 4.5 RDS(ON), DRAIN-SOURCE ON RESISTANCE (W) V GS , GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics 8 35 50 65 80 95 110 125 140 9 7 150 ° C V GS = 2.5V 8 V GS = 2.75V 7 6 5 6 25 ° C 150 ° C 5 4 4 3 25 ° C 3 -55° C 2 2 1 -55° C 1 0 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 ID, DRAIN CURRENT (A) Fig. 5 Drain-Source On Resistance vs. Drain Current 2 20 Tj, JUNCTION TEMPERATURE (°C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature www.kexin.com.cn 0.16 0 0 0.05 0.1 0.15 0.2 ID, DRAIN CURRENT (A) Fig. 6 Drain-Source On Resistance vs. Drain Current 0.25 MOSFET SMD Type N-Channel MOSFET BSS138 (KSS138) ■ Typical Characterisitics 6 1 V GS = 4.5V 5 ID, DIODE CURRENT (A) 150 ° C 4 3 2 25 ° C 1 0.1 150 ° C -55° C 0.01 25 ° C -55° C 0.001 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.45 0.4 0 0.5 0.2 0.4 0.6 0.8 1.2 1 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Drain-Source On Resistance vs. Drain Current 3.5 100 V GS = 10V 3 V GS = 0V f = 1MHz C, CAPACITANCE (pF) 150 ° C 2.5 2 1.5 25 ° C 1 -55° C C iSS 10 C OSS 0.5 C rSS 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 ID, DRAIN CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain Current 0.5 1 0 5 10 15 20 25 30 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain Source Voltage www.kexin.com.cn 3