DG408L, DG409L Vishay Siliconix Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers DESCRIPTION FEATURES The DG408L, DG409L are low voltage pin-for-pin compatible companion devices to the industry standard DG408, DG409 with improved performance. Using BiCMOS wafer fabrication technology allows the DG408L, DG409L to operate on single and dual supplies. Single supply voltage ranges from 3 V to 12 V while dual supply operation is recommended with ± 3 V to ± 6 V. The DG408L is an 8 channel single-ended analog multiplexer designed to connect one of eight inputs to a common output as determined by a 3 bit binary address (A0, A1, A2). The DG409L is a dual 4 channel differential analog multiplexer designed to connect one of four differential inputs to a common dual output as determined by its 2 bit binary address (A0, A1). Break-before-make switching action to protect against momentary crosstalk between adjacent channels. The DG408L, DG409L provides lower on-resistance, faster switching time, lower leakage, less power consumption and higher off-Isolation than the DG408, DG409. • Halogen-free according to IEC 61249-2-21 Definition • Pin-for-pin compatibility with DG408, DG409 • 2.7 V to 12 V single supply or ± 3 V to ± 6 V dual supply operation • Lower on-resistance: RDS(ON) - 17 typ. • Fast switching: tON - 38 ns, tOFF - 18 ns • Break-before-make guaranteed • Low leakage: IS(off) - 0.2 nA max. • Low charge injection: 1 pC • TTL, CMOS, LV logic (3 V) compatible • 82 dB off-isolation at 1 MHz • 2000 V ESD protection (HBM) • Compliant to RoHS Directive 2002/95/EC BENEFITS • • • • High accuracy Single and dual power rail capacity Wide operating voltage range Simple logic interface APPLICATIONS • • • • • • • Data acquisition systems Battery operated equipment Portable test equipment Sample and hold circuits Communication systems SDSL, DSLAM Audio and video signal routing FUNCTIONAL BLOCK DIAGRAMS AND PIN CONFIGURATIONS DG408L Dual-In- Line, SOIC and TSSOP A0 EN VS1 S2 S3 S4 D 16 1 2 Decoders/Drivers 15 3 14 4 13 5 12 6 11 7 10 8 9 DG409L Dual-In- Line, SOIC and TSSOP A1 A0 A2 EN GND V- V+ S1a S5 S2a S6 S3a S7 S4a S8 Da Top View 16 1 2 Decoders/Drivers 15 3 14 4 13 5 12 6 11 7 10 8 9 A1 GND V+ S1b S2b S3b S4b Db Top View * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 71342 S11-1066-Rev. G, 30-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408L, DG409L Vishay Siliconix TRUTH TABLE DG408L TRUTH TABLE DG409L A2 A1 A0 EN On Switch A1 A0 EN On Switch X X X 0 None X X 0 None 0 0 0 1 1 0 0 1 1 0 0 1 1 2 0 1 1 2 0 1 0 1 3 1 0 1 3 0 1 1 1 4 1 1 1 4 1 0 0 1 5 1 0 1 1 6 1 1 0 1 7 1 1 1 1 8 Logic "0" = VAL 0.8 V Logic "1" = VAH 2.4 V X = Do not Care For low and high voltage levels for VAX and VEN consult “Digital Control” parameters for specific V+ operation. ORDERING INFORMATION DG408L Temp. Range Package Part Number 16-pin SOIC DG408LDY DG408LDY-E3 DG408LDY-T1 DG408LDY-T1-E3 16-pin TSSOP DG408LDQ DG408LDQ-E3 DG408LDQ-T1 DG408LDQ-T1-E3 - 40 °C to 85 °C ORDERING INFORMATION DG409L Temp. Range Package Part Number 16-pin SOIC DG409LDY DG409LDY-E3 DG409LDY-T1 DG409LDY-T1-E3 16-pin TSSOP DG409LDQ DG409LDQ-E3 DG409LDQ-T1 DG409LDQ-T1-E3 - 40 °C to 85 °C ABSOLUTE MAXIMUM RATINGS Parameter Limit Voltage referenced V+ to VGND 7 Digital inputsa, VS, VD 30 Peak current, S or D (pulsed at 1 ms, 10 % duty cycle max.) 100 Power Dissipation (Package)b V (V-) - 0.3 to (V) + 0.3 Current (any terminal) Storage Temperature Unit 14 mA (A suffix) - 65 to 150 (D suffix) - 65 to 125 16-pin plastic TSSOPc 650 16-pin narrow SOICc 600 16-pin CerDIPd 900 LCC-20e 750 °C mW Notes: a. Signals on SX, DX, AX, or EN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads soldered or welded to PC board. c. Derate 7.6 mW/°C above 75 °C. d. Derate 12 mW/°C above 75 °C. e. Derate 10 mW/°C above 75 °C. www.vishay.com 2 Document Number: 71342 S11-1066-Rev. G, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408L, DG409L Vishay Siliconix SPECIFICATIONS (Single Supply 12 V) Test Conditions Unless Otherwise Specified V+ = 12 V, ± 10 %, V- = 0 V Parameter Symbol VEN = 0.8 V or 2.4 Vf A Suffix D Suffix - 55 °C to 125 °C - 40 °C to 85 °C Temp.b Typ.d Min.c Max.c Min.c 12 0 Max.c Unit 12 V Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG RDS(on) RDS(on) Matching RDS Between Channelsg On-Resistance Flatnessi RFLAT(on) IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) Full 0 VD = 10.8 V, VD = 2 V or 9 V, IS = 10 mA sequence each switch on Room Full 17 29 38 29 35 VD = 10.8 V, VD = 2 V or 9 V IS = 10 mA Room 1 3 3 Room 3 VEN = 0 V, VD = 11 V or 1 V VS = 1 V or 11 V VS = VD = 1 V or 11 V 7 7 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 2.4 nA Digital Control Logic High Input Voltage VINH Full Logic Low Input Voltage VINL Full 2.4 0.8 0.8 IIN VAX = VEN = 2.4 V or 0.8 V Full Transition Time tTRANS VS1 = 8 V, VS8 = 0 V, (DG408L) VS1b = 8 V, VS4b = 0 V, (DG409L) see figure 2 Room Full 30 Break-Before-Make Time tOPEN VS(all) = VDA = 5 V see figure 4 Room Full 11 Room Full 38 55 60 55 60 Room Full 18 25 35 25 30 Room 1 5 5 Room - 70 Room - 82 Input Current - 1.5 1.5 -1 1 V µA Dynamic Characteristics Enable Turn-On Time tON(EN) Enable Turn-Off Time tOFF(EN) VAX = 0 V, VS1 = 5 V (DG408L) VAX = 0 V, VS1b = 5 V (DG409L) see figure 3 Q CL = 1 nF, VGEN = 0 V, RGEN = 0 Charge Injectione Off Isolation e, h OIRR e XTALK Crosstalk Source Off Capacitancee Drain Off Capacitance e Drain On Capacitancee f = 100 kHz, RL = 1 k 60 68 1 60 65 1 ns CS(off) f = 1 MHz, VS = 0 V, VEN = 0 V Room 7 CD(off) f = 1 MHz, VD = 2.4 V, VEN = 0 V Room 20 CD(on) f = 1 MHz, VD = 0 V, VEN = 2.4 V (DG409L only) Room 31 VEN = VA = 0 V or 5 V Room 0.2 pC dB pF Power Supplies Power Supply Range V+ Power Supply Current I+ 3 12 0.7 3 12 V 0.7 mA Notes: a. Leakage parameters are guaranteed by worst case test condition and not subject to production test. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. RDS(on) = RDS(on) Max - RDS(on) Min. h. Worst case isolation occurs on Channel 4 do to proximity to the drain pin. i. RDS(on) flatness is measured as the difference between the minimum and maximum measured values across a defined Analog signal. Document Number: 71342 S11-1066-Rev. G, 30-May-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408L, DG409L Vishay Siliconix SPECIFICATIONS (Dual Supply V+ = 5 V, V - = - 5 V) Test Conditions Unless Otherwise Specified V+ = 5 V, ± 10 %, V- = - 5 V Parameter Symbol VEN = 0.6 V or 2.4 Vf A Suffix D Suffix - 55 °C to 125 °C - 40 °C to 85 °C Temp.b Typ.d Min.c Max.c Min.c 5 -5 Max.c Unit 5 V 40 50 Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG RDS(on) IS(off) Switch Off Leakage Currenta ID(off) Channel On Leakage ID(on) Currenta Full VD = ± 3.5 V, IS = 10 mA sequence each switch on V+ = 5.5 , V- = 5.5 V VEN = 0 V, VD = ± 4.5 V, VS = ± 4.5 V V+ = 5.5 V, V- = - 5.5 V VEN = 2.4 V, VD = ± 4.5 V, VS = ± 4.5 V Room Full -5 20 40 50 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 2.4 nA Digital Control Logic High Input Voltage VINH Full Logic Low Input Voltage VINL Full Input Currenta 2.4 0.6 0.6 IIN VAX = VEN = 2.4 V or 0.6 V Full tTRANS VS1 = 3.5 V, VS8 = - 3.5 V, (DG408L) VS1b = 3.5 V, VS4b = - 3.5 V, (DG409L) see figure 2 Room Full 30 tOPEN VS(all) = VDA = 3.5 V see figure 4 Room Full 8 Room Full 25 55 68 55 60 Room Full 20 40 50 40 45 - 1.5 1.5 -1 1 V µA Dynamic Characteristics e Transition Time Break-Before-Make Timee 1 60 65 1 ns Enable Turn-On Timee tON(EN) Enable Turn-Off Timee tOFF(EN) VAX = 0 V, VS1 = 3.5 V (DG408L) VAX = 0 V, VS1b = 3.5 V (DG409L) see figure 3 Source Off Capacitancee CS(off) f = 1 MHz, VS = 0 V, VEN = 0 V Room 6 Drain Off Capacitancee CD(off) f = 1 MHz, VD = 0 V, VEN = 0 V Room 15 e CD(on) f = 1 MHz, VD = 0 V, VEN = 2.4 V Room 29 Drain On Capacitance 60 78 pF Notes: a. Leakage parameters are guaranteed by worst case test condition and not subject to production test. b. Room = 25 °C, full = as determined by the operating temperature suffix. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. RDS(on) = RDS(on) max. - RDS(on) min. h. Worst case isolation occurs on channel 4 do to proximity to the drain pin. i. RDS(on) flatness is measured as the difference between the minimum and maximum measured values across a defined analog signal. www.vishay.com 4 Document Number: 71342 S11-1066-Rev. G, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408L, DG409L Vishay Siliconix SPECIFICATIONS (Single Supply 5 V) Test Conditions Unless Otherwise Specified V+ = 5 V, ± 10 %, V- = 0 V Parameter Symbol VEN = 0.6 V or 2.4 Vf A Suffix D Suffix - 55 °C to 125 °C - 40 °C to 85 °C Temp.b Typ.d Min.c Max.c Min.c 5 0 Max.c Unit 5 V Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG RDS(on) RDS(on) Matching Between Channelsg On-Resistance Flatnessi RDS RFLAT(on) IS(off) Switch Off Leakage Currenta ID(off) Channel On Leakage ID(on) Currenta Full 0 V+ = 4.5 V, VD or VS = 1 V or 3.5 V, ID = 5 mA Room Full 35 49 62 40 62 V+ = 4.5 V, VD = 1 V or 3.5 V, IS = 5 mA Room 1.5 3 3 V+ = 5.5 V, VS = 1 V or 4 V VD = 4 V or 1 V V+ = 5.5 V, VD = VS = 1 V or 4 V sequence each switch on Room 4 4 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 Full 2.4 nA Digital Control Logic High Input Voltage VINH Logic Low Input Voltage VINL Input Currenta V+ = 5 V Full 2.4 0.6 0.6 IIN VAX = VEN = 2.4 V or 0.6 V Full Transition Timee tTRANS VS1 = 3.5 V, VS8 = 0 V, (DG408L) VS1b = 3.5 V, VS4b = 0 V, (DG409L) see figure 2 Room Full 44 Break-Before-Make Timee tOPEN VS(all) = VDA = 3.5 V, see figure 4 Room Full 17 Room Full 43 60 70 60 65 Room Full 26 45 60 45 50 Room 1 5 5 Room - 70 Room - 80 - 1.5 1.5 -1 1 V µA Dynamic Characteristics Enable Turn-On Timee tON(EN) Enable Turn-Off Timee tOFF(EN) VAX = 0 V, VS1 = 3.5 V (DG408L) VAX = 0 V, VS1b = 3.5 V (DG409L) see figure 3 Q CL = 1 nF, RGEN = 0 , VGEN = 0 Charge Injectione Off Isolation e, h OIRR e XTALK Crosstalk Source Off Capacitancee Drain Off Capacitance Drain On e Capacitancee f = 100 kHz, RL = 1 k 125 138 1 125 135 1 ns CS(off) f = 1 MHz, VS = 0 V, VEN = 0 V Room 8 CD(off) f = 1 MHz, VD = 0 V, VEN = 0 V Room 21 CD(on) f = 1 MHz, VD = 0 V, VEN = 2.4 V (DG409L only) Room 32 pC dB pF Notes: a. Leakage parameters are guaranteed by worst case test condition and not subject to production test. b. Room = 25 °C, full = as determined by the operating temperature suffix. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. RDS(on) = RDS(on) max. - RDS(on) min. h. Worst case isolation occurs on channel 4 do to proximity to the drain pin. i. RDS(on) flatness is measured as the difference between the minimum and maximum measured values across a defined analog signal. Document Number: 71342 S11-1066-Rev. G, 30-May-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408L, DG409L Vishay Siliconix SPECIFICATIONS (Single Supply 3 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 3 V, ± 10 %, V- = 0 V VEN = 0.4 V or 2 Vf A Suffix D Suffix - 55 °C to 125 °C - 40 °C to 85 °C Temp.b V+ = 2.7 V, VD = 0.5 or 2.2 V, IS = 5 mA Room Full Typ.d Min.c Max.c Min.c 3 0 Max.c Unit 3 V 80 100 Analog Switch Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Currenta Channel On Leakage Currenta VANALOG RDS(on) Full IS(off) V+ = 3.3 V, VS = 2 or 1 V, VD = 1 or 2 V ID(off) ID(on) V+ = 3.3 V, VD = VS = 1 or 2 V sequence each switch on 0 60 80 105 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 2 nA Digital Control Logic High Input Voltage VINH Full Logic Low Input Voltage VINL Full Input Currenta 2 0.4 0.4 IIN VAX = VEN = 2.4 V or 0.4 V Full Transition Time tTRANS VS1 = 1.5 V, VS8 = 0 V, (DG408L) VS1b = 1.5 V, VS4b = 0 V, (DG409L) see figure 2 Room Full 75 Break-Before-Make Time tOPEN VS(all) = VDA = 1.5 V, see figure 4 Room Full 32 Enable Turn-On Time tON(EN) 70 95 115 95 105 Enable Turn-Off Time tOFF(EN) VAX = 0 V, VS1 = 1.5 V (DG408L) VAX = 0 V, VS1b = 1.5 V (DG409L) see figure 3 Room Full Room Full 55 100 115 100 105 Q CL = 1 nF, RGEN = 0 , VGEN = 0 V 5 5 - 1.5 1.5 -1 1 V µA Dynamic Characteristics Charge Injectione Off Isolatione, h OIRR Crosstalke XTALK Source Off Capacitancee Drain Off Capacitancee Drain On Capacitancee RL = 1 k, f = 100 kHz 150 175 1 150 175 1 ns Room 0.4 Room - 70 Room - 79 CS(off) f = 1 MHz, VS = 0 V, VEN = 0 V Room 8 CD(off) f = 1 MHz, VD = 0 V, VEN = 0 V Room 19 CD(on) f = 1 MHz, VD = 0 V, VEN = 2 V (DG409L only) Room 33 pC dB pF Notes: a. Leakage parameters are guaranteed by worst case test condition and not subject to production test. b. Room = 25 °C, full = as determined by the operating temperature suffix. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. RDS(on) = RDS(on) max. - RDS(on) min. h. Worst case isolation occurs on channel 4 do to proximity to the drain pin. i. RDS(on) flatness is measured as the difference between the minimum and maximum measured values across a defined analog signal. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 6 Document Number: 71342 S11-1066-Rev. G, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408L, DG409L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 25 R DS(on) - Drain-Source On-Resistance () R DS(on) - Drain-Source On-Resistance () 80 70 60 V+ = 2.7 V 50 40 V+ = 4.5 V 30 V+ = 12 V 20 10 20 V+ = 5 V V- = - 5 V 15 10 5 0 0 0 2 4 6 8 10 12 -5 -3 -1 RDS(on) vs. VD and Power Supply 5 R DS(on) - Drain-Source On-Resistance () 50 Upper Threshold Limit 1.6 1.4 1.2 VT (V) 3 RDS(on) vs. VD and Power Supply 1.8 Low Threshold Limit 1.0 0.8 0.6 0.4 0.2 0.0 85°C 125°C 40 25°C 30 - 55 °C 20 10 0 0 2 4 6 8 10 12 14 0 1 2 V+ - Positive Supply Voltage (V) 70 30 60 Switching Speed (nS) 85°C 125°C 20 25°C 15 - 55 °C 10 4 5 6 RDS(on) vs. VD and Temperature 35 25 3 VD - Drain Voltage (V) Input Threshold vs. V+ Supply Voltage R DS(on) - Drain-Source On-Resistance () 1 VD - Drain Voltage (V) VD - Drain Voltage (V) 50 40 tTRANS 30 tON 20 tOFF 5 10 0 0 -6 -4 -2 0 2 4 VD - Drain Voltage (V) RDS(on) vs. VD and Temperature Document Number: 71342 S11-1066-Rev. G, 30-May-11 6 0 2 4 6 8 10 12 14 V+ - Positive Supply Voltage (V) Switching Time vs. Positive Supply Voltage www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408L, DG409L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 10 35 IS(off) 30 Switching Speed (nS) Leakage Current (pA) 0 - 10 ID(off) ID(on) - 20 tON 25 tTRANS 20 tOFF 15 10 - 30 5 0 - 40 -5 -3 -1 1 3 3 5 4 5 ± - Dual Power Supply Voltage (V) VD, V S - Analog Voltage (V) Leakage Current vs. Analog Voltage 6 Switching Time vs. Dual Power Supply Voltage 1.0 10 CL = 1000 pF - 10 V+ = 12 V V- = 0 V 0.6 0.4 V+ = 5 V V- = - 5 V V+ = 3 V V- = 0 V RL = 50 - 30 Loss (dB) Q - Charge Injection (pC) 0.8 - 50 Off Isolation - 70 V+ = 5 V V- = 0 V Insertion Loss - 3 dB = 280 MHz Crosstalk 0.2 - 90 0.0 -5 0 5 VS - Source Voltage (V) - 110 0.1 10 Charge Injection vs. Analog Voltage 100 1000 Insertion Loss, Off Isolation and Crosstalk vs. Frequency (Single Supply) 35 35 CD, CS - Drain/Source Capacitance (pF) CD, CS - Drain/Source Capacitance (pF) 10 Frequency (MHz) 1 CD(on) 30 V+ = 12 V V- = 0 V 25 20 CD(off) 15 10 CS(off) 5 0 0 2 4 6 8 10 12 Drain/Source Capacitance vs. Analog Voltage www.vishay.com 8 CD(on) 30 V+ = 5 V V- = - 5 V 25 20 CD(off) 15 10 CS(off) 5 0 -5 -4 -3 -2 -1 0 1 2 3 4 5 Drain/Source Capacitance vs. Analog Voltage Document Number: 71342 S11-1066-Rev. G, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408L, DG409L Vishay Siliconix SCHEMATIC DIAGRAM (Typical Channel) V+ GND D A0 V+ VLevel Shift AX Decode/ Drive S1 V+ EN Sn V- Figure 1. TEST CIRCUITS V+ V+ A2 S1 A1 50 3V VS1 S2 - S7 A0 DG408L EN S8 VS8 VO D GND V35 pF 300 Logic Input VAX tr < 20 ns tf < 20 ns 3V 50 % 0V VVS1 VO A1 A0 50 90 % VS8 S1a - S4a, Da V+ S4b tTRANS VSB4 VO Db EN GND 50 % VS1 S1b DG409L 3V 90 % Switch Output V+ V300 35 pF S1 ON tTRANS S8 ON (DG408L) or S4 ON (DG409L) V- Figure 2. Transition Time Document Number: 71342 S11-1066-Rev. G, 30-May-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408L, DG409L Vishay Siliconix TEST CIRCUITS V+ V+ VS1 S1 EN S2 - S8 A0 DG408L A1 A2 GND VO D V- 50 50 % 0V 35 pF 300 tr < 20 ns tf < 20 ns 3V Logic Input tON(EN) V- tOFF(EN) 0V 10 % V+ Switch Output VO V+ 90 % VS1 S1b VO EN S1a - S4a, Da S2b - S4b A0 DG409L A1 Db GND VO V- 50 35 pF 300 V- Figure 3. Enable Switching Time bbm.5 3V EN V+ 4/9 VS1 All S and Da A0 tr < 20 ns tf < 20 ns 3V 50 % 0V DG408L DG409L A1 A2 Db, D GND 50 Logic Input VO VS V- V- 300 80 % Switch Output 35 pF VO 0V tOPEN Figure 4. Break-Before-Make Interval www.vishay.com 10 Document Number: 71342 S11-1066-Rev. G, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408L, DG409L Vishay Siliconix TEST CIRCUITS V+ Rg V+ SX Vg OFF ON OFF 0V A0 Channel Select 3V Logic Input EN VO D A1 CL 1 nF A2 GND V- VO Switch Output VO is the measured voltage due to charge transfer error Q, when the channel turns off. V- Q = CL x VO Figure 5. Charge Injection V+ V+ VIN VS VIN V+ SX SX VS Rg = 50 S8 A0 D A2 GND RL 1 k V- EN S8 VO A1 V+ S1 A0 Rg = 50 D VO A1 A2 GND EN RL 1 k V- VVOUT Off Isolation = 20 log VCrosstalk = 20 log VIN VOUT VIN Figure 6. Off Isolation Figure 7. Crosstalk V+ V+ VS V+ S1 V+ Rg = 50 A0 D A2 GND EN V- Channel Select RL 1 k Meter A2 VO A1 S1 HP4192A Impedance Analyzer or Equivalent S8 A1 A0 D GND VInsertion Loss = 20 log f = 1 MHz V- VOUT VIN Figure 8. Insertion Loss EN V- Figure 9. Source Drain Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71342. Document Number: 71342 S11-1066-Rev. G, 30-May-11 www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix TSSOP: 16-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A - 1.10 1.20 A1 0.05 0.10 0.15 A2 - 1.00 1.05 0.38 B 0.22 0.28 C - 0.127 - D 4.90 5.00 5.10 E 6.10 6.40 6.70 E1 4.30 4.40 4.50 e - 0.65 - L 0.50 0.60 0.70 L1 0.90 1.00 1.10 y - - 0.10 θ1 0° 3° 6° ECN: S-61920-Rev. D, 23-Oct-06 DWG: 5624 Document Number: 74417 23-Oct-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1