Power Module 1200V 400A IGBT Module MG12400D-BN2MM RoHS ® Features • F ast switching and short tail current • H igh short circuit capability, self limiting short circuit current • F ree wheeling diodes with fast and soft reverse recovery • IGBT3 CHIP(Trench+Field Stop technology) • V CE(sat) with positive temperature coefficient • Low switching losses Applications Agency Approvals AGENCY AGENCY FILE NUMBER • Medical applications • Motion/servo control • H igh frequency switching application • UPS systems E71639 Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters TJ max Max. Junction Temperature TJ op Operating Temperature Tstg Storage Temperature Visol Insulation Test Voltage CTI Comparative Tracking Index Test Conditions Min Typ Max Unit 150 °C -40 125 °C -40 125 °C AC, t=1min 3000 V 350 Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M6) 2.5 5 N·m Weight 320 g Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit TJ =25°C 1200 V ±20 V TC=25°C 580 A TC=80°C 400 A tp=1ms 800 A 1925 W IGBT VCES Collector - Emitter Voltage VGES Gate - Emitter Voltage IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I 2t TJ =25°C 1200 V TC=25°C 580 A TC=80°C 400 A 800 A TJ =125°C, t=10ms, VR =0V 30000 A2s Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG12400D-BN2MM 115 1 ©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 Power Module 1200V 400A IGBT Module Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=16mA 5.0 5.8 6.5 V Collector - Emitter IC=400A, VGE=15V, TJ=25°C 1.7 Saturation Voltage IC=400A, VGE=15V, TJ=125°C 1.9 IGBT VGE(th) VCE(sat) IICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time VCE=1200V, VGE=0V, TJ=25°C VCE=1200V, VGE=0V, TJ=125°C VCE=0V, VGE=±15V, TJ=125°C VCE=600V, IC=400A , VGE=±15V VCE=25V, VGE=0V, f =1MHz VCC=600V IC=400A RG =1.8Ω tf Fall Time VGE=±15V Inductive Load Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current RthJC -400 V V 2 mA 10 mA 400 nA 1.9 Ω 3.8 μC 28 nF 1.0 nF TJ=25°C 160 ns TJ=125°C 170 ns TJ=25°C 40 ns TJ=125°C 45 ns TJ=25°C 450 ns TJ=125°C 520 ns TJ=25°C 100 ns TJ=125°C 160 ns TJ=25°C 20 mJ TJ=125°C 30 mJ TJ=25°C 33 mJ TJ=125°C 50 mJ tpsc≤10μS , VGE=15V, TJ=125°C , VCC=900V 1550 Junction-to-Case Thermal Resistance (Per IGBT) A 0.065 K/W Diode VF Forward Voltage tRR Reverse Recovery Time IRRM Max. Reverse Recovery Current Erec Reverse Recovery Energy RthJCD MG12400D-BN2MM IF=400A, VGE=0V, TJ =25°C 1.65 IF=400A, VGE=0V, TJ =125°C 1.65 V IF=400A, VR=600V diF/dt=-8000A/µs TJ=125°C 450 ns Junction-to-Case Thermal Resistance (Per Diode) 2 116 V 75 A 35 mJ 0.12 K/W ©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 Power Module 1200V 400A IGBT Module Figure 1: Typical Output Characteristics Figure 2: Typical Output Characteristics 800 800 VGE =15V 640 TJ =25°C 480 IC (A) IC (A) 640 VGE =19V VGE =17V VGE =15V VGE =13V VGE =11V VGE = 9V 320 480 TJ =125°C 320 TJ =125°C 160 160 0 0 1.0 0.5 1.5 2.0 VCE˄V˅ 2.5 3.0 0 Figure 3: Typical Transfer characteristics 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅ Figure 4: Switching Energy vs. Gate Resistor 800 200 VCE=600V IC=400A VGE=±15V TJ =125°C VCE =20V 160 TJ =25°C 480 320 Eon Eoff (mJ) IC (A) 640 120 TJ =125°C 160 0 80 Eoff 40 5 6 7 9 8 VGE˄V˅ 10 11 0 12 Figure 5: Switching Energy vs. Collector Current 120 100 40 MG12400D-BN2MM 4 6 8 10 12 14 16 RG˄Ω˅ 18 800 700 600 500 Eoff 400 RG=1.8Ω VGE=±15V TJ =125°C 300 Eon 200 20 0 0 2 900 VCE=600V RG=1.8Ω VGE=±15V TJ =125°C 80 60 0 Figure 6: R everse Biased Safe Operating Area IC (A) Eon Eoff (mJ) Eon 100 0 100 200 300 400 500 600 700 800 IC˄A˅ 117 3 0 200 400 600 800 1000 1200 1400 VCE˄V˅ ©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 Power Module 1200V 400A IGBT Module Figure 7: Diode Forward Characteristics Figure 8: S witching Energy vs. Gate Resistor 24 800 20 640 16 Erec (mJ) 480 IF (A) IF=400A VCE=600V TVj =125°C 12 320 8 TJ =125°C 160 4 TJ =25°C 0 0 0.6 1.2 VF˄V˅ 1.8 0 2.4 Figure 9: Switching Energy vs. Forward Current 4 6 8 10 12 14 RG˄Ω˅ 16 18 1 RG=1.8Ω VCE=600V TVj =125°C Diode ZthJC (K/W) 32 Erec (mJ) 2 Figure 10: Transient Thermal Impedance 48 40 0 24 16 0.1 IGBT 0.01 8 0 0 MG12400D-BN2MM 0.001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) 100 200 300 400 500 600 700 800 IF (A) 4 118 ©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 Power Module 1200V 400A IGBT Module Dimensions-Package D Circuit Diagram 2.8x0.5 3-M6 Packing Options Part Number Marking Weight Packing Mode M.O.Q MG12400D-BN2MM MG12400D-BN2MM 320g Bulk Pack 60 Part Marking System Part Numbering System MG12400 D - B N2 MM PRODUCT TYPE M: Power Module ASSEMBLY SITE WAFER TYPE MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V CIRCUIT TYPE 2x(IGBT+FWD) CURRENT RATING PACKAGE TYPE MG12400D-BN2MM LOT NUMBER 400: 400A MG12400D-BN2MM 5 119 ©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16