DMN5L06K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) ID TA = +25°C 2.0Ω @ VGS = 5.0V 300 mA 2.5Ω @ VGS = 2.5V 200 mA V(BR)DSS 50V Low On-Resistance Very Low Gate Threshold Voltage (1.0V max) Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Description and Applications Mechanical Data This new generation 50V N-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. Load switches Level switches Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Drain SOT23 D Gate Gate Protection Diode Top View ESD PROTECTED TO 2kV Source S G Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN5L06K-7 DMN5L06KQ-7 Notes: Qualification Commercial Automotive Case SOT23 SOT23 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information DAB Date Code Key Year 2006 Code T Month Code Jan 1 YM ADVANCE INFORMATION Features and Benefits DAB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z 2013 A 2014 B 2015 C 2016 D 2017 E Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D DMN5L06K Document number: DS30929 Rev. 8 - 2 1 of 6 www.diodes.com March 2014 © Diodes Incorporated DMN5L06K Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic ADVANCE INFORMATION Drain Source Voltage Gate-Source Voltage Drain Current (Note 5) Symbol VDSS VGSS Continuous Pulsed (Note 6) Unit V V ID Value 50 20 300 800 Symbol PD RθJA TJ, TSTG Value 350 357 -65 to +150 Unit mW C/W C mA Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = +25°C Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Symbol Min Typ Max Unit BVDSS IDSS 50 60 V nA IGSS 1 500 50 μA nA nA VGS(th) 0.49 V 3.0 2.5 2.0 Ω ID(ON) |Yfs| VSD 1.4 1.0 0.5 200 0.5 1.4 A mS V Ciss Coss Crss 50 25 5.0 pF pF pF RDS(ON) Test Condition VGS = 0V, ID = 10μA VDS = 50V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V VDS = VGS, ID = 250μA VGS = 1.8V, ID = 50mA VGS = 2.5V, ID = 50mA VGS = 5.0V, ID = 50mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA VDS = 25V, VGS = 0V f = 1.0MHz 5. Device mounted on FR-4 PCB 6. Pulse width 10mS, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. DMN5L06K Document number: DS30929 Rev. 8 - 2 2 of 6 www.diodes.com March 2014 © Diodes Incorporated ADVANCE INFORMATION DMN5L06K VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () 10 0 -50 75 100 125 150 -25 25 50 0 Tch , CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 1 0 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () 10 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN5L06K Document number: DS30929 Rev. 8 - 2 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 3 of 6 www.diodes.com March 2014 © Diodes Incorporated IDR, REVERSE DRAIN CURRENT (A) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () IDR, REVERSE DRAIN CURRENT (A) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 60 400 CT, JUNCTION CAPACITANCE (pF) 350 PD, POWER DISSIPATION (mW) ADVANCE INFORMATION DMN5L06K 300 250 200 150 100 50 40 C iss 30 20 10 C oss 50 0 0 100 50 TA, AMBIENT TEMPERATURE (°C) Fig. 11 Derating Curve - Total DMN5L06K Document number: DS30929 Rev. 8 - 2 150 0 f = 1MHz 0 4 of 6 www.diodes.com C rss 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 Typical Junction Capacitance 30 March 2014 © Diodes Incorporated DMN5L06K Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. ADVANCE INFORMATION A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° All Dimensions in mm B C H K J M K1 D F L G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMN5L06K Document number: DS30929 Rev. 8 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com March 2014 © Diodes Incorporated DMN5L06K IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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