HTS138-600 HTS138-600 INSULATION TYPE TRIAC (TO-220F) VDRM = 600 V IT(RMS) = 12A FEATURES 3.T2 Symbol Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=12A) High Commutation dv/dt Isolation Voltage (VISO=1500VAC) 2.Gate 1.T1 TO-220F 1. T1 2. Gate 3. T2 General Description This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. Absolute Maximum Ratings (Ta=25℃) Symbol Parameter Value Units VDRM Repetitive Peak Off-State Voltage 600 V IT(RMS) R.M.S On-State Current (Tc = 58℃) 12.0 A ITSM Surge On-State Current (One Cycle, 50/60Hz, Peak, Non Repetitive) 100/110 A VGM Peak Gate Voltage 10 V IGM Peak Gate Current 2.0 A PGM Peak Gate Power Dissipation 5.0 W VISO Isolation Breakdown Voltage (RMS AC 1min) 1500 V TSTG Storage Temperature Range -40 to +125 ℃ Tj Operating Temperature -40 to +125 ℃ ◎ SEMIHOW REV.1.0 Jan 2006 Symbol Parameter IGT Gate Trigger Current VGT Gate Trigger Voltage VGD (dv/dt)c IH (Ta=25℃) Test Conditions Min Typ VD=6V, RL=10Ω VD=6V, RL=10Ω Non Trigger Gate Tj =125℃, VD=1/2VDRM Voltage Critical Rate of Rise of Tj =125℃, VD=2/3VDRM Off-State Voltage at (di/dt)c=-4A/ms Communication Max Units 25 mA 1.5 V 0.2 V 10.0 V/uS Holding Current 15.0 VD=VDRM, Single Phase, Half Wave, IDRM Repetitive Peak OffState Current VTM Peak On-State Voltage IT=6A, Inst, Measurement Tj =125℃ mA 2.0 mA 1.65 V Max Units 3.7 ℃/W Thermal Characteristics Symbol RTH(j-c) Parameter Thermal Resistance Test Conditions Junction to Case Min Typ ◎ SEMIHOW REV.1.0 Jan 2006 HTS138-600 Electrical Characteristics HTS138-600 Performance Curves Fig 1. Gate Characteristics Fig 2.On-State Voltage 101 On-state Current (A) Gate Voltage (V) 101 100 100 10-1 10-1 101 102 0.5 103 1.0 1.5 2.0 2.5 3.0 3.5 On-state Voltage (V) Gate Current (mA) Fig 4. On State Current vs. Maximum Power Dissipation Fig 3. Gate Trigger Voltage vs. Junction Temperature 20 10 Power Dissipation (W) VGT(t℃) VGT(25℃) 18 1 16 14 12 10 8 6 4 2 0.1 0 -50 0 50 100 0.0 150 6 9 12 15 Fig 6. Surge On-State Current Rating (Non-Repetitive) Fig 5. On State Current vs. Allowable Case Temperature 120 Surge On-State Current (A) 130 Allowable Case Temp (℃) 3 RMS On-State Current (A) Junction Temperature (℃) 120 110 100 90 80 70 0 1 2 3 4 5 6 7 8 9 100 80 60 40 20 0 10 11 12 13 14 15 RMS On-State Current (A) 100 101 102 Time (Cycles) ◎ SEMIHOW REV.1.0 Jan 2006 10 I+GT1 I-GT1 1 I-GT3 I+GT3 Transient Thermal Impedance (℃/W) 10 IGT(t℃) IGT(25℃) HTS138-600 Fig8. Transient Thermal Impedance Fig 7. Gate Trigger Current vs. Junction Temperature 0.1 -50 0 50 100 150 1 0.1 10-2 10-1 Junction Temperature (℃) 101 100 102 Time (Sec) Fig 7. Gate Trigger Characteristics Test Circuit 10Ω 10Ω A RG A 6V RG 6V V V Test Procedure I Test Procedure II 10Ω A RG 6V V Test Procedure III ◎ SEMIHOW REV.1.0 Jan 2006 HTS138-600 Package Dimensions HTS138-600 (TO-220F) Dimensions in Millimeters ◎ SEMIHOW REV.1.0 Jan 2006