Transient Voltage Suppressors Array for ESD Protection Low Capacitance ESDXXV23T-1A Series Description SOT-23 The ESDXXV23T-1A is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Feature Functional Diagram u 500 Watts Peak Pulse Power per Line (tp=8/20μs) u Protects one I/O line u Low clamping voltage u Working voltages: 3.3, 5, 8, 12. 15, 24, 36V u Low leakage current u IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) u IEC61000-4-4 (EFT) 40A (5/50ηs) u IEC61000-4-5 (Lightning) 12A (8/20μs) Applications u High-Speed data lines u Cellular handsets AND accessories u Universal Serial Bus (USB) port protection u Portable instrumentation u LAN / WAN equipment u Peripherals Mechanical Characteristics u JEDEC SOT-23 Package u Molding Compound Flammability Rating : UL 94V-0 u Weight 8.0 Milligrams (Approximate) u Quantity Per Reel : 3,000pcs u Reel Size : 7 inch u Lead Finish : Lead Free Mechanical Characteristics Symbol Parameter Value Units 500 W PPP Peak Pulse Power (tp=8/20μs waveform) TL Lead Soldering Temperature 260 (10sec) ºC TSTG Storage Temperature Range -55 to +150 ºC Operating Temperature Range -55 to +150 ºC TJ Air Discharge ±15 Contact Discharge ±8 IEC61000-4-2 (ESD) IEC61000-4-4 (EFT) 40 A IEC61000-4-5 ( Lightning ) 12 A UN Semiconductor Co., Ltd. Revision January 06, 2014 KV www.unsemi.com.tw 1/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors Array for ESD Protection Low Capacitance ESDXXV23T-1A Series Electrical Characteristics (@ 25℃ Unless Otherwise Specified ) Device Marking VRWM (V) (Max.) VB (V) (Min.) IT (mA) VC @1A (Max.) (Max.) ESD03V23T-1A TL3 3.3 4.0 1 7.0 ESD05V23T-1A TL5 5.0 6.0 1 ESD08V23T-1A TL8 8.0 8.5 ESD12V23T-1A TLA 12.0 ESD15V23T-1A TLB ESD24V23T-1A ESD36V23T-1A Part Number (@A) IR (μA) (Max.) C (pF) (Typ.) 9.0 5 40 5 9.8 11.0 5 5 5 1 13.4 15.0 5 5 5 13.3 1 19.0 23.0 5 1 5 15.0 16.7 1 24.0 28.0 5 1 5 TLC 24.0 26.7 1 43.0 46.0 5 1 5 TLD 36.0 40.0 1 51.0 68.0 5 1 5 VC Characteristic Curves Fig1. 8/20μs Pulse Waveform Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) 120 IPP - Peak Pulse Current - % of IPP 100 100% TEST WAVEFORM PARAMETERS tr=8μs td=20μs Peak Value IPP 80 Percent of Peak Pulse Current % tr 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 % of Rated Power 10% tr = 0.7~1ns Time (ns) 30ns 30 60ns t - Time (μs) Fig3. 90% Power Derating Curve 110 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 Ambient Temperature – TA (ºC) UN Semiconductor Co., Ltd. Revision January 06, 2014 www.unsemi.com.tw 2/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors Array for ESD Protection Low Capacitance ESDXXV23T-1A Series SOT-23 Package Outline & Dimensions Millimeters Inches Symbol Soldering Footprint UN Semiconductor Co., Ltd. Revision January 06, 2014 Min. Nom. Max. Min. Nom. Max. A 0.89 1.00 1.11 0.035 0.040 0.044 A1 0.01 0.06 0.10 0.001 0.002 0.004 b 0.37 0.44 0.50 0.15 0.18 0.020 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.081 L 0.35 0.54 0.69 0.014 0.021 0.029 HE 2.10 2.40 2.64 0.083 0.094 0.104 Symbol Millimeters Inches X 0.80 0.031 X1 0.95 0.037 Y 0.90 0.035 Z 2.00 0.079 www.unsemi.com.tw 3/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.