UNISONIC TECHNOLOGIES CO., LTD MJE13007-M NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007-M is designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 700V Blocking Capability ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13007L-M-TA3-T MJE13007G-M-TA3-T MJE13007L-M-TA3-T Package TO-220 Pin Assignment 1 2 3 B C E Packing Tube (1)T: Tube (1)Packing Type (2)Package Type (3)Lead Free www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd (2) TA3: TO-220 (3) G: Halogen Free, L: Lead Free 1 of 6 QW-R204-028.A MJE13007-M NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Sustaining Voltage VCEO 400 V Collector-Emitter Breakdown Voltage VCBO 700 V Emitter-Base Voltage VEBO 9.0 V 8.0 A Continuous IC Collector Current Peak (1) ICM 16 A 4.0 A Continuous IB Base Current Peak (1) IBM 8.0 A 12 A Continuous IE Emitter Current Peak (1) IEM 24 A Power Dissipation TC = 25°C PD 80 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 1.56 °C/W Note 1: Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%. Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied at a mounting torque of 6 to 8•lbs. ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER Collector-Emitter Sustaining Voltage SYMBOL VCEO(SUS) Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE1 hFE2 DC Current Gain Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) TEST CONDITIONS IC=10mA, IB=0 VCES=700V VCES=700V, TC=125°C VEB=9.0V, IC=0 IC=2.0A, VCE=5.0V IC=5.0A, VCE=5.0V IC=2.0A, IB=0.4A IC=5.0A, IB=1.0A IC=5.0A, IB=1.0A, TC=100°C IC=5.0A, IB=2.5A IC=8.0A, IB=2.0A IC=2.0A, IB=0.4A IC=5.0A, IB=1.0A IC=5.0A, IB=1.0A, TC=100°C IC=5.0A, IB=2.5A IC=500mA, VCE=10V, f=1.0 MHz VCB=10V, IE=0, f=0.1MHz Current-Gain-Bandwidth Product fT Output Capacitance COB RESISTIVE LOAD (TABLE 1) Delay Time tD VCC=125V, IC=5.0A, Rise Time tR IB1=IB2=1.0A, tP=25μs, Storage Time tS Duty Cycle≤1.0% Fall Time tF Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 400 TYP 8.0 5.0 4.0 1.2 14 80 0.025 0.5 1.8 0.23 MAX UNIT V 0.1 mA 1.0 mA 100 μA 40 30 1.0 2.0 V 3.0 0.6 3.0 1.2 1.6 V 1.5 1.5 MHz pF 0.1 1.5 3.0 0.7 μs μs μs μs 2 of 6 QW-R204-028.A MJE13007-M TYPICAL THERMAL RESPONSE Transient thermal resistance, r(t) (NORMALIZED) NPN SILICON TRANSISTOR There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Fig. 7 is based on TC = 25°C; TJ(PK) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be debated when TC≥25°C. Second breakdown limitations do not debate the same as thermal limitations. Allowable current at the voltages shown on Fig. 7 may be found at any case temperature by using the appropriate curve on Fig. 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Use of reverse biased safe operating area data (Fig. 8) is discussed in the applications information section. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R204-028.A MJE13007-M NPN SILICON TRANSISTOR Table 1. Test Conditions for Dynamic Performance RESISTIVE SWITCHING CIRCUIT VALUES TEST CIRCUITS REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING VCC=125V RC=25Ω D1=1N5820 OR EQUIV UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R204-028.A MJE13007-M NPN SILICON TRANSISTOR IC/IB=5 1.2 1 IC=-40°C 0.8 25°C 100°C 0.6 0.4 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 IC/IB=5 5 2 1 0.5 0.2 0.1 0.05 IC=-40°C 25°C 100°C 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 5 10 2 Collector Current, IC (A) Fig. 2 Base-Emitter Saturation Voltage Fig. 3 Collector-Emitter Saturation Voltage DC Current Gain, hFE 10000 TJ=25°C Cib Collector Current, IC (A) Capacitance, C (pF) 10 Collector Current, IC (A) Collector-Emitter Voltage, VCE (V) Base-Emitte Saturation Voltage, VBE(SAT) (V) 1.4 Collector-Emitte Saturation Voltage, VCE(SAT) (V) TYPICAL CHARACTERISTICS 1000 Cob 100 10 0.1 1 10 100 1000 Reverse Voltage,VR (V) Fig. 6 Capacitance UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 100 50 20 10 Extended SOA@1μs,10μs 1μs 10μs 5 2 TC=25°C 1ms DC 1 5ms 0.5 0.2 Bonding wire limit 0.1 Thermal limit 0.05 Second breakdown limit 0.02 0.01 10 curves apply below rated vceo 20 30 50 70 100 200 300 500 1000 Collector-Emitter Voltage, VCE (V) Fig. 7 Maximum Forward Bias Safe Operating Area 5 of 6 QW-R204-028.A MJE13007-M NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Time, t (ns) Time, t (ns) Power Derating Factor Collector Current, IC (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R204-028.A