MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 60 VOLTS Features • • • • • • • Small Compact Surface Mountable Package with J−Bent Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Guard−ring for Stress Protection NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant* SMA CASE 403D MARKING DIAGRAM B16 AYWW G Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 70 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped in 12 mm tape, 5000 units per 13 inch reel Polarity: Cathode Lead Indicated by Polarity Band ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3B B16 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping† MBRA160T3G SMA (Pb−Free) 5,000 / Tape & Reel ** NRVBA160T3G SMA (Pb−Free) 5,000 / Tape & Reel ** Device ** 12 mm Tape, 13” Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 11 1 Publication Order Number: MBRA160T3/D MBRA160T3G, NRVBA160T3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM VRWM VR 60 V Average Rectified Forward Current (At Rated VR, TC = 105°C) IO Average Rectified Forward Current (At Rated VR, TC = 70°C) IO Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 1.0 2.1 IFSM Storage/Operating Case Temperature Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR, TJ = 25°C) 60 A A A Tstg, TC −55 to +150 °C TJ −55 to +150 °C dv/dt 10,000 V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 2) Thermal Resistance, Junction−to−Ambient (Note 2) Symbol Value Unit RqJL RqJA 35 86 °C/W 2. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4. ELECTRICAL CHARACTERISTICS Symbol Characteristic VF Maximum Instantaneous Forward Voltage (Note 3) (IF = 1.0 A) IR Maximum Instantaneous Reverse Current (VR = 60 V) 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 Value Unit TJ = 25°C TJ = 125°C 0.510 0.475 TJ = 25°C TJ = 125°C 0.2 20 V mA MBRA160T3G, NRVBA160T3G 1 75°C 125°C 0.1 0.1 25°C 0.2 0.3 0.4 0.5 0.7 0.6 1 75°C 125°C 0.1 0.8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1E−02 80 125°C 70 1E−03 75°C 1E−04 1E−05 0 10 50 40 30 25°C 1E−06 25°C 60 20 30 50 40 20 60 0 10 VR, REVERSE VOLTAGE (VOLTS) 1.6 1.4 SQUARE WAVE 1.2 1.0 0.8 0.6 0.4 0.2 0 110 115 120 125 130 135 140 145 150 155 PFO, AVERAGE POWER DISSIPATION (W) TJ = 150°C dc 30 50 40 60 70 Figure 4. Typical Capacitance 2.0 1.8 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current IF, AVERAGE FORWARD CURRENT (A) 25°C VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) C, CAPACITANCE (pF) IR, INSTANTANEOUS REVERSE CURRENT (A) 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 1.0 SQUARE WAVE TJ = 150°C 0.8 dc 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating − Junction−to−Lead Figure 6. Forward Power Dissipation http://onsemi.com 3 1.6 MBRA160T3G, NRVBA160T3G PACKAGE DIMENSIONS SMA CASE 403D−02 ISSUE G HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.97 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.10 2.20 0.10 0.20 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.078 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.083 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.087 0.008 0.064 0.016 0.115 0.180 0.220 0.060 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A L c A1 SOLDERING FOOTPRINT* 4.0 0.157 2.0 0.0787 2.0 0.0787 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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