ON MBRA160T3G Surface mount schottky power rectifier Datasheet

MBRA160T3G,
NRVBA160T3G
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
http://onsemi.com
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
60 VOLTS
Features
•
•
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bent Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Guard−ring for Stress Protection
NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
SMA
CASE 403D
MARKING DIAGRAM
B16
AYWW
G
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 70 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 12 mm tape, 5000 units per 13 inch reel
Polarity: Cathode Lead Indicated by Polarity Band
ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
B16
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
MBRA160T3G
SMA
(Pb−Free)
5,000 /
Tape & Reel **
NRVBA160T3G
SMA
(Pb−Free)
5,000 /
Tape & Reel **
Device
**
12 mm Tape, 13” Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 11
1
Publication Order Number:
MBRA160T3/D
MBRA160T3G, NRVBA160T3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
Value
Unit
VRRM
VRWM
VR
60
V
Average Rectified Forward Current
(At Rated VR, TC = 105°C)
IO
Average Rectified Forward Current
(At Rated VR, TC = 70°C)
IO
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
1.0
2.1
IFSM
Storage/Operating Case Temperature
Operating Junction Temperature (Note 1)
Voltage Rate of Change
(Rated VR, TJ = 25°C)
60
A
A
A
Tstg, TC
−55 to +150
°C
TJ
−55 to +150
°C
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Symbol
Value
Unit
RqJL
RqJA
35
86
°C/W
2. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
ELECTRICAL CHARACTERISTICS
Symbol
Characteristic
VF
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 1.0 A)
IR
Maximum Instantaneous Reverse Current
(VR = 60 V)
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
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2
Value
Unit
TJ = 25°C
TJ = 125°C
0.510
0.475
TJ = 25°C
TJ = 125°C
0.2
20
V
mA
MBRA160T3G, NRVBA160T3G
1
75°C
125°C
0.1
0.1
25°C
0.2
0.3
0.4
0.5
0.7
0.6
1
75°C
125°C
0.1
0.8
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1E−02
80
125°C
70
1E−03
75°C
1E−04
1E−05
0
10
50
40
30
25°C
1E−06
25°C
60
20
30
50
40
20
60
0
10
VR, REVERSE VOLTAGE (VOLTS)
1.6
1.4
SQUARE WAVE
1.2
1.0
0.8
0.6
0.4
0.2
0
110
115
120
125
130
135
140
145
150
155
PFO, AVERAGE POWER DISSIPATION (W)
TJ = 150°C
dc
30
50
40
60
70
Figure 4. Typical Capacitance
2.0
1.8
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
IF, AVERAGE FORWARD CURRENT (A)
25°C
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
IR, INSTANTANEOUS REVERSE CURRENT (A)
10
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
10
1.0
SQUARE WAVE
TJ = 150°C
0.8
dc
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating − Junction−to−Lead
Figure 6. Forward Power Dissipation
http://onsemi.com
3
1.6
MBRA160T3G, NRVBA160T3G
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE G
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
E
b
DIM
A
A1
b
c
D
E
HE
L
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.20
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.008
0.064
0.016
0.115
0.180
0.220
0.060
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
L
c
A1
SOLDERING FOOTPRINT*
4.0
0.157
2.0
0.0787
2.0
0.0787
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MBRA160T3/D
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