isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -6A ·High DC Current Gain-hFE= 750(Min.)@ IC= -2A ·Complement to Type BDW63/A/B/C/D APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE BDW64 -45 BDW64A -60 BDW64B -80 BDW64C -100 BDW64D -120 BDW64 -45 BDW64A -60 BDW64B -80 BDW64C -100 BDW64D -120 UNIT V V Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A IB Base Current-Continuous -0.1 A PC Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ B TJ Tstg Junction Temperature Storage Temperature Range 2 W 60 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W Rth j-c Thermal Resistance, Junction to Case 62.5 ℃/W isc Website：www.iscsemi.cn BDW64/A/B/C/D isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDW64/A/B/C/D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-Emitter Breakdown Voltage CONDITIONS MIN BDW64 -45 BDW64A -60 BDW64B IC= -30mA; IB= 0 TYP. MAX V -80 BDW64C -100 BDW64D -120 UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -12mA -2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -60mA -4.0 V Base-Emitter On Voltage IC= -2A; VCE= -3V -2.5 V C-E Diode Forward Voltage IF= -6A -3.5 V -0.5 mA VCB= -45V; IE= 0 VCB= -45V; IE= 0; TJ= 150℃ VCB= -60V; IE= 0 VCB= -60V; IE= 0; TJ= 150℃ VCB= -80V; IE= 0 VCB= -80V; IE= 0; TJ= 150℃ VCB= -100V; IE= 0 VCB= -100V; IE= 0; TJ= 150℃ VCB= -120V; IE= 0 VCB= -120V; IE= 0; TJ= 150℃ -0.2 -5.0 -0.2 -5.0 -0.2 -5.0 -0.2 -5.0 -0.2 -5.0 mA -2.0 mA VBE(on) VECF ICEO Collector Cutoff Current VCE= -30V; IB= 0 BDW64A VCE= -30V; IB= 0 BDW64B VCE= -40V; IB= 0 BDW64C VCE= -50V; IB= 0 BDW64D VCE= -60V; IB= 0 BDW64A Collector Cutoff Current B BDW64 BDW64 ICBO B BDW64B BDW64C BDW64D B B B B B IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -2A; VCE= -3V 750 hFE-2 DC Current Gain IC= -6A; VCE= -3V 100 20000 Switching times ton Turn-on Time toff Turn-off Time isc Website：www.iscsemi.cn IC= -3A; IB1= -IB2= -12mA; VBE(off)= -4.5V, RL=10Ω 2 1.0 μs 5.0 μs