Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA OP501,DA Features: • • • • • High photo sensitivity Fast response time 0805 package size Phototransistor or Photo Darlington Output Choice of opaque or water clear flat lens OP500,DA Description: Each of these devices consists of a NPN silicon phototransistor mounted in a miniature SMT package with a 0805 size chip carrier that is compatible with most automated mounting and position sensing equipment. Both OP500, OP500DA and OP501, OP501DA have a flat lens. OP501 and OP501DA has an opaque lens that shields the device from stray light, whereas OP500 and OP500DA has a water clear lens. All devices have a wide viewing acceptance angle and higher collector current than devices without lenses especially on the OP500DA and OP501 which incorporate photo darlington die instead on the standard transistor. OP500, OP501, OP500DA and OP501DA are mechanically and spectrally matched to the OP200 series infrared LEDs. Ordering Information Applications: • • • • Part Number OP500 OP501 OP500DA OP501DA Non-contact position sensing Datum detection Machine automation Optical encoders Sensor Viewing Angle Phototransistor 150° Photo Darlington 150° Lead Length N/A OP500, OP501, OP500DA, OP501DA OP500 OP501 OP500DA OP501DA 1 1 SENSOR DICE 2 2 COLLECTOR Pin # Transistor 1 Collector 2 Emitter Recommended Solder Pad Patterns 2a RoHS Moisture OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Issue A.4 02/09 Page 1 of 5 Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA Absolute Maximum Ratings (TA=25°C unless otherwise noted) -40o C to +100o C Storage Temperature Range Operating Temperature Range -25o C to +85o C Lead Soldering Temperature(1) 260° C Collector-Emitter Voltage OP500, OP501 OP500DA, OP501DA 30 V 35 V Emitter-Collector Voltage 5V Collector Current OP500, OP501 OP500DA, OP501DA 20 mA 32 mA Power Dissipation(2) OP500, OP501 OP500DA, OP501DA 75 mW 100 mW Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS 0.1 10.0 - - mA VCE = 5.0 V, EE = 0.15 mW/cm2 (3) VCE = 5.0 V, EE = 0.15 mW/cm2 (3) Collector-Emitter Saturation Voltage OP500, OP501 OP500DA, OP501DA - - 0.3 1.0 V IC = 100 µA, EE = 1.0 mW/cm2 (3) IC = 1 mA, EE = 0.15 mW/cm2 (3) Collector-Emitter Dark Current - - 100 nA VCC= 5.0 V (4) 30 35 - - V IC= 100 µA, EE = 0 5 5 - - V IE= 100 µA, EE = 0 IC= 100 µA, EE = 0 - 15 50 60 µs IC= 1 mA, RL = 1KΩ IC= 1 mA, RL = 1KΩ Input Diode IC(ON) VCE(SAT) ICEO On-State Collector Current OP500, OP501 OP500DA, OP501DA VBR(CEO) Collector-Emitter Breakdown Voltage OP500, OP501 OP500DA, OP501DA VBR(ECO) Emitter-Collector Breakdown Voltage OP500, OP501 OP500DA, OP501DA tr, tf Rise and Fall Times OP500, OP501 OP500DA, OP501DA Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 2.17 mW/° C above 25° C. 3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. 4. To calculate typical collector dark current in µA, use the formulate ICEO = 10(0.04 t - ¾), where TA is the ambient temperature in ° C. OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A.4 02/09 Page 2 of 5 OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA Relative Response vs. Wavelength 100% Relative Response 80% 60% 40% OP500, OP500DA OP501, OP501DA 20% 0% 400 500 600 700 800 900 1000 1100 Wavelength (nm) OP500, OP501 Relative On-State Collector Current – Ic (mA) vs. Collector-Emitter Voltage—VCE (V) Collector-Emitter Dark Current vs. Temperature-TA 2.00 Conditions: Ee = 0 mW/cm2 VCE = 10V IC(ON) - On-State Collector Current (mA) Collector-Emitter Dark Current (nA) 1000 100 10 1 0 -25 0 25 50 Temperature—(°C) 75 100 1.80 3 mW/cm2 1.60 2.5 mW/cm2 1.40 2 mW/cm2 1.20 1.00 1.5 mW/cm2 0.80 1.0 mW/cm2 0.60 0.40 0.5 mW/cm2 0.20 0 1 2 3 4 5 Collector-Emitter Voltage (V) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Issue A.4 02/09 Page 3 of 5 Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA OP500, OP501 Relative On-State Collector Current vs. Irradiance—Ee (mW/cm2) 160% 140% Normalized at Ee = 5mW/cm2 Conditions: VCE = 5V, λ = 935nm, TA = 25 °C 130% Relative Collector Current 140% Relative Collector Current Relative On-State Collector Current-IC (mA) vs. Temperature-TA 120% 100% 80% 60% 40% 20% Normalized at TA = 25°C . Conditions: VCE = 5V, λ = 935nm, TA = 25 °C 120% 110% 100% 90% 80% 70% 1.0 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -25 0 2 25 50 75 100 Temperature—(°C) Ee—Irradiance (mW/cm ) OP500DA, OP501DA Relative On-State Collector Current – Ic (mA) vs. Collector-Emitter Voltage—VCE (V) Collector-Emitter Dark Current vs. Temperature-TA 30 Conditions: Ee = 0 mW/cm2 VCE = 10V IC(ON) - On-State Collector Current (mA) Collector-Emitter Dark Current (nA) 1000 100 10 1 1.2 mW/cm2 25 1.0 mW/cm2 20 0.8 mW/cm2 17.5 0.6 mW/cm2 15.0 0.4 mW/cm2 12.5 0.2 mW/cm2 10.0 0 -25 0 25 50 Temperature—(°C) 75 100 0 0.5 1.0 1.5 2.5 3 Collector-Emitter Voltage (V) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A.4 02/09 Page 4 of 5 OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA OP500DA, OP501DA 160% Relative On-State Collector Current-IC (mA) vs. Temperature-TA 140% Normalized at Ee = 1mW/cm2 Conditions: VCE = 5V, λ = 935nm, TA = 25 °C 130% Relative Collector Current—% Relative Collector Current—% Relative On-State Collector Current vs. Irradiance—Ee (mW/cm2) 140% 120% 100% 80% 60% 40% 0 Normalized at TA = 25°C . Conditions: VCE = 5V, 120% 110% 100% 90% 80% 70% 0.50 1.0 1.5 2.0 -25 0 2 Irradiance- Ee(mW/cm ) 25 50 75 100 Temperature—(°C) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Issue A.4 02/09 Page 5 of 5