BF 2030 Silicon N-Channel MOSFET Tetrode Preliminary data 3 • For low noise, high gain controlled input stages up to 1GHz 4 • Operating voltage 5V 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Pin Configuration BF 2030 NEs 1=S Q62702-F1773 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Symbol Value Drain-source voltage VDS 14 V Continuos drain current ID 40 mA Gate 1/gate 2 peak source current ±I G1/2SM 10 Gate 1 (external biasing) +VG1SE 7 Total power dissipation, T S = 76 °C Ptot 200 Storage temperature T stg -55 ...+150 Channel temperature T ch 150 Rthchs ≤370 Unit V mW °C Thermal Resistance Channel - soldering point Semiconductor Group Semiconductor Group 11 K/W Mar-16-1998 1998-11-01 BF 2030 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. DC characteristics Drain-source breakdown voltage V(BR)DS - 12 - I D = 650 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 - source breakdown voltage +V(BR)G1SS - 8.5 - +V(BR)G2SS - 8.5 - V +I G1SS - - 50 nA +I G2SS - - 50 Drain current I DSS - VDS = 5 V, V G1S = 0 , V G2S = 4.5 V Drain-source current I DSX - VG2S(p) VG1S(p) V +I G1S = 10 mA, V G2S = 0 V, V DS = 0 V Gate 2 - source breakdown voltage ±I G2S = 10 mA, V G1S = V DS = 0 Gate 1 source current VG1S = 6 V, V G2S = 0 V Gate 2 source leakage current VG2S = 8 V, V G1S = 0 V, V DS = 0 V - µA 12 - mA 0.3 0.8 - V 0.3 0.7 - g fs - 31 - mS Cg1ss - 3 - pF Cdss - 2.1 - F - 2 - VDS = 5 V, V G2S = 4.5 , RG1 = 20 kΩ Gate 2-source pinch-off voltage VDS = 5 V, ID = 100 µA Gate 1-source pinch-off voltage VDS = 5 V, V G2S = 4 V, I D = 200 µA AC characteristics Forward transconductance VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 kHz Gate 1 input capacitance VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Output capacitance VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Noise figure dB VDS = 5 V, ID = 10 mA, f = 800 MHz Semiconductor Group Semiconductor Group 22 Mar-16-1998 1998-11-01