PD - 97252 DIGITAL AUDIO MOSFET IRFI4020H-117P Key Parameters g Features Integrated half-bridge package Reduces the part count by half Facilitates better PCB layout Key parameters optimized for Class-D audio amplifier applications Low RDS(ON) for improved efficiency Low Qg and Qsw for better THD and improved efficiency Low Qrr for better THD and lower EMI Can delivery up to 300W per channel into 8Ω load in half-bridge configuration amplifier Lead-free package VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max 200 80 19 6.8 3.0 150 V m: nC nC Ω °C G1 D1 S1/D2 G2 S2 TO-220 Full-Pak 5 PIN G1, G2 D1, D2 S1, S2 Gate Drain Source Description This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications. Absolute Maximum Ratings VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C EAS TJ TSTG g Parameter Max. Units Drain-to-Source Voltage 200 V Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ±20 9.1 A Power Dissipation Power Dissipation 21 8.5 W 0.17 130 W/°C mJ -55 to + 150 °C f f 5.7 36 c Linear Derating Factor Single Pulse Avalanche Energy d Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance RθJC RθJA www.irf.com g Junction-to-Case f Parameter Junction-to-Ambient (free air) 300 x x 10lb in (1.1N m) Typ. ––– Max. 5.9 ––– 65 Units °C/W 1 08/22/06 IRFI4020H-117P Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter g Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 200 ––– ––– ∆ΒVDSS/∆TJ RDS(on) VGS(th) Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 24 80 ––– 100 mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 5.5A Gate Threshold Voltage Gate Threshold Voltage Coefficient 3.0 ––– ––– -12 4.9 ––– V VDS = VGS, ID = 100µA mV/°C Drain-to-Source Leakage Current ––– ––– ––– ––– 20 250 µA VDS = 200V, VGS = 0V VDS = 200V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 nA VGS = 20V VGS = -20V gfs Forward Transconductance Total Gate Charge 11 ––– ––– 19 ––– 29 S VDS = 50V, ID = 5.5A Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge ––– ––– 4.9 0.95 ––– ––– Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 5.8 7.4 ––– ––– Internal Gate Resistance ––– ––– 6.8 3.0 ––– ––– Turn-On Delay Time Rise Time ––– ––– 8.4 8.0 ––– ––– Turn-Off Delay Time Fall Time ––– ––– 18 4.0 ––– ––– Input Capacitance Output Capacitance ––– ––– 1240 130 ––– ––– Reverse Transfer Capacitance Effective Output Capacitance ––– ––– 28 110 ––– ––– Internal Drain Inductance ––– 4.5 ––– ∆VGS(th)/∆TJ IDSS Qg Qgs1 Qgs2 Qgd Qgodr Qsw RG(int) td(on) tr td(off) tf Ciss Coss Crss Coss eff. LD V e nC Internal Source Inductance ––– 7.5 VDS = 100V VGS = 10V ID = 5.5A See Fig. 6 and 15 Ω e VDD = 100V, VGS = 10V ID = 5.5A ns RG = 2.4Ω pF VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig.5 VGS = 0V, VDS = 0V to 160V Between lead, nH LS Conditions VGS = 0V, ID = 250µA ––– D 6mm (0.25in.) from package G S and center of die contact Diode Characteristics g Parameter Min. Typ. Max. Units ––– ––– 9.1 (Body Diode) Pulsed Source Current ––– ––– 36 (Body Diode) Diode Forward Voltage Reverse Recovery Time ––– ––– ––– 76 1.3 110 V ns Reverse Recovery Charge ––– 230 350 nC IS @ TC = 25°C Continuous Source Current ISM VSD trr Qrr c Conditions MOSFET symbol A showing the integral reverse p-n junction diode. TJ = 25°C, IS = 5.5A, VGS = 0V TJ = 25°C, IF = 5.5A, VDD = 160V di/dt = 100A/µs e e Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 8.6mH, RG = 25Ω, IAS = 5.5A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. Specifications refer to single MosFET. 2 www.irf.com IRFI4020H-117P 100 100 BOTTOM VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V 10 6.0V 10 BOTTOM 6.0V 1 ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 150°C Tj = 25°C 0.1 1 0.1 1 10 0.1 100 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 3.0 VDS = 50V ≤60µs PULSE WIDTH T J = 150°C 10 TJ = 25°C 1 ID = 5.5A VGS = 10V 2.5 2.0 (Normalized) RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (A) 10 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) 1.5 1.0 0.5 0.1 0.0 3 4 5 6 7 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 10000 Fig 4. Normalized On-Resistance vs. Temperature 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 5.5A C oss = C ds + C gd Ciss 1000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 Coss 100 Crss 10.0 VDS= 160V VDS= 100V 8.0 VDS= 40V 6.0 4.0 2.0 0.0 10 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 5 10 15 20 25 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRFI4020H-117P 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 T J = 150°C 10 T J = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 1 100µsec 0.1 1msec 0.01 10msec Tc = 25°C Tj = 150°C Single Pulse 0.001 VGS = 0V 0.1 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1000 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 5.0 VGS(th) , Gate Threshold Voltage (V) 10 8 ID, Drain Current (A) DC 6 4 2 4.5 4.0 ID = 100µA 3.5 3.0 2.5 2.0 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T J , Junction Temperature (°C) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Junction Temperature 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.001 1E-006 0.02 0.01 τJ R1 R1 τJ τ1 τ1 R2 R2 τ2 τ2 R3 R3 τ3 τC τ 2.172 2.621 τ3 Ci= τi/Ri Ci= i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 Ri (°C/W) τi (sec) 1.108 0.001041 0.148518 2.010100 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com 300 600 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFI4020H-117P ID = 5.5A 275 250 225 200 T J = 125°C 175 150 125 T J = 25°C 100 75 50 ID 0.91A 1.1A BOTTOM 5.5A TOP 500 400 300 200 100 0 5 6 7 8 9 10 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13a. Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V DRIVER L VDS tp D.U.T RG + V - DD IAS VGS 20V A 0.01Ω tp I AS Fig 13b. Unclamped Inductive Test Circuit Fig 13c. Unclamped Inductive Waveforms LD VDS VDS 90% + VDD - 10% D.U.T VGS VGS Pulse Width < 1µs Duty Factor < 0.1% td(on) Fig 14a. Switching Time Test Circuit tr td(off) tf Fig 14b. Switching Time Waveforms Id Vds Vgs L VCC DUT 0 Vgs(th) 1K Qgs1 Qgs2 Fig 15a. Gate Charge Test Circuit www.irf.com Qgd Qgodr Fig 15b Gate Charge Waveform 5 IRFI4020H-117P TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 117 (Dimensions are shown in millimeters (inches)) TO-220 Full-Pak 5-Pin Part Marking Information 14 TO-220AB Full-Pak 5-Pin package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2006 6 www.irf.com