Preliminary data VCES Low VCE(sat) IGBT High speed IGBT IXGA/IXGP/IXGH10N60 600 V IXGA/IXGP/IXGH10N60A 600 V IC25 VCE(sat) 20 A 20 A 2.5 V 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 20 A I C90 TC = 90°C 10 A I CM TC = 25°C, 1 ms 40 A SSOA (RBSOA) VGE = 15 V, T VJ = 125°C, RG = 150 Ω Clamped inductive load, L = 300 µH ICM = 20 @ 0.8 VCES A PC TC = 25°C 100 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque, TO-247 AD Weight Symbol 1.13/10 Nm/lb.in. TO-263 AA TO-247 AD Test Conditions IC = 250 µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC © 1996 IXYS All rights reserved g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES = IC90, VGE = 15 V 2 6 TJ = 25°C TJ = 125°C 10N60 10N60A V 5 V 200 1 µA mA ±100 nA 2.5 3.0 V V G C E TO-263 AA (IXGA) G E C (TAB) TO-247 AD (IXGH) G C (TAB) C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features l International standard packages JEDEC TO-263 AA surface mountable and JEDEC TO-247 AD l 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity Applications l AC motor speed control l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switch-mode and resonant-mode power supplies Advantages Space savings, TO-263 AA l Facilitates automated assembly l Reduces assembly time and cost l Easy to mount with 1 screw, TO-247 (isolated mounting screw hole) l High power density l 91510G (9/96 ) IXGA/ IXGP/ IXGA/ IXGP/ Symbol Test Conditions gfs I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Cies 8 S 750 pF 100 pF Cres 30 pF Qg 50 70 nC 15 25 nC 25 45 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc Eoff Inductive load, TJ = 25°°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = Roff = 150 Ω Remarks: Switching times may increase for VCE 10N60A (Clamp) > 0.8 • VCES , higher TJ or increased RG 10N60A td(on) Inductive load, TJ = 125°°C 100 ns tri IC = IC90, VGE = 15 V, L = 100 µH 200 ns 1 mJ td(on) tri Eon td(off) tfi Eon td(off) tfi Eoff TO-220 AB Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4 VCE = 0.8 VCES , RG = Roff = 150 Ω 10N60 Remarks: Switching times 10N60A may increase for V CE (Clamp) > 0.8 • V CES, higher 10N60 10N60A TJ or increased RG IXGH10N60 IXGH10N60A 100 ns 200 ns 0.4 mJ 600 ns 300 ns 0.6 mJ 900 1500 ns 570 360 2000 600 ns ns 2.0 1.2 Dim. A B Millimeter Min. Max. 12.70 14.93 14.23 16.50 Inches Min. Max. 0.500 0.580 0.560 0.650 C D 9.66 3.54 10.66 4.08 0.380 0.139 0.420 0.161 E F 5.85 2.29 6.85 2.79 0.230 0.090 0.270 0.110 G H J K M N 1.15 2.79 0.64 2.54 4.32 0.64 1.77 6.35 0.89 BSC 4.82 1.39 0.045 0.110 0.025 0.100 0.170 0.025 0.070 0.250 0.035 BSC 0.190 0.055 Q R 0.51 2.04 0.76 2.49 0.020 0.080 0.030 0.115 TO-263 AA Outline mJ mJ 1. 2. 3. 4. 1.25 K/W RthJC RthCK 0.25 K/W IXGA/P/IXGH 10N60 / 10N60A characteristic curves are located in the IXGH 10N60U1 and IXGH 10N60AU1 data sheet. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R TO-247 AD Outline Dim. ∅P e A A1 A2 b b1 b2 C D E e L L1 ∅P Q R S Millimeter Min. Max. 4.7 5.3 2.2 2.54 2.2 2.6 1.0 1.4 1.65 2.13 2.87 3.12 .4 .8 20.80 21.46 15.75 16.26 5.20 5.72 19.81 20.32 4.50 3.55 3.65 5.89 6.40 4.32 5.49 6.15 BSC Dim. Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Millimeter Min. Max. 4.06 4.83 2.03 2.79 0.51 0.99 1.14 1.40 0.46 0.74 1.14 1.40 8.64 9.65 7.11 8.13 9.65 10.29 6.86 8.13 2.54 BSC 14.61 15.88 2.29 2.79 1.02 1.40 1.27 1.78 0 0.38 0.46 0.74 Gate Collector Emitter Collector Bottom Side Inches Min. Max. .160 .190 .080 .110 .020 .039 .045 .055 .018 .029 .045 .055 .340 .380 .280 .320 .380 .405 .270 .320 .100 BSC .575 .625 .090 .110 .040 .055 .050 .070 0 .015 .018 .029 Min. Recommended Footprint (Dimensions in inches and (mm)) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025